Enhanced optical and structural properties of 1.3μm GaInNAs∕GaAs multiple quantum-well heterostructures with stepped strain-mediating layers

Abstract

Role of Sb in the growth and optical properties of 1.55 μ m Ga In N ( Sb ) As ∕ Ga N As quantum-well structures by molecular-beam epitaxy

Charge separation and temperature-induced carrier migration in Ga1−xInxNNuytten1, Hayne2, Bansal3 et al. 2011Phys. Rev. BSelf Cite

“…The suppression of the low-energy broadening and the decrease of the line width by about 30% when going from Sample A to Sample B confirm that a lower growth temperature and the incorporation of indium in the barrier material (Sample B only) have a positive effect on the optical quality of Ga 1−x In x N y As 1−y MQW structures. 6,9 We should note that apart from a low-energy broadening in Sample A, a high-energy feature is present in the PL signal of Sample B only. Very little is known up to now about its origin, but we have found that the feature does not exhibit a shift in energy as a function of either excitation power or temperature (not shown here), suggesting that it cannot be due to free-exciton recombination.…”

“…The introduction of indium in the barrier material of Sample B reduces the strain at the QW-barrier interface, further lowering the inhomogeneity of the Ga 1−x In x N y As 1−y QWs in the sample. 6,9 Hence, the effect of carrier localization is expected to be much stronger in Sample A, while the period of the modulation is larger in Sample B. The result is that, in both samples, the electrons may be trapped by nitrogen-rich 24,31 regions, while the holes may only be localized in In-rich parts of the sample, separating them from electrons in the N-rich regions at low temperatures in an out-of-phase manner (Fig.…”

“…The GaN 0.007 As 0.993 barriers in Sample A are tensile strained and thus act as strain-compensating layers to the compressively strained QWs, while the small addition of indium to the barrier material in Sample B reduces the strain at the QW-barrier interface and improves the optical and structural properties of the QW. 6,9 PL spectra were obtained in a He bath and a He flow cryostat at temperatures between 4.2 and 200 K, located in the bore of either a homemade pulsed field coil or a DC superconducting 12 T magnet. Magnetic field pulses of 20 ms and up to 50 T were generated using a 5-kV, 500-kJ capacitor bank.…”

Recent Progress in Development of GaInNAs¿ Based Photonic Devices

“…Since invented in 1995 by Kondow et al [1], the GaInNAs / GaAs material system has been extensively studied as an alternative to InP-based optoelectronic devices operating in the 1.3 -1.5 µm wavelength range [2,3]. Despite difficulties related to crystal growth [2,3], the quest for the development of telecommunication grade GaInNAs-based lasers continues at an accelerated pace.…”

“…Despite difficulties related to crystal growth [2,3], the quest for the development of telecommunication grade GaInNAs-based lasers continues at an accelerated pace. This development is powered by the growing demand for higher bandwidth in telecommunication networks [4].…”