Enhanced Inversion Mobility on 4H-SiC $(\hbox{11}\overline{\hbox{2}} \hbox{0})$ Using Phosphorus and Nitrogen Interface Passivation

Liu, Gang; Ahyi, A. C.; Xu, Yi; Isaacs-Smith, T.; Sharma, Yogesh; Williams, John R.; Feldman, L. C.; Dhar, Sarit

doi:10.1109/led.2012.2233458

Cited by 106 publications

(75 citation statements)

References 19 publications

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“…Another, or additional, possible mechanism to explain the observed mobility improvement when using P or N is "counter doping," proposed by Liu et al 4 and Swanson et al 36 In this mechanism a small fraction of the N and P, which are both n-type dopants in SiC, occupy near interface substitutional sites in the SiC substrate, forming a thin surface-doped layer with opposite polarity compared with the p-type MOSFET substrate. This counterdoping model implies the formation of a higher carrier concentration in the inversion mode of the device leading to a higher inversion layer field-effect mobility.…”

Section: Relationship Of These Results To the Electrical Passivamentioning

confidence: 99%

“…The fact that the active counter dopant ratio is 30 times higher for P than for N, and 10 times greater in absolute number, makes the counterdoped P content consistent with the experimental result that P-passivated devices have more free electrons and higher electron density, 38 result in a higher field effect mobility with lower total P content. 4 Note that the counter doping P or N concentration would be only a small portion of the total interfacial content, well below the detection limit of most direct physical analysis methods.…”

Section: Relationship Of These Results To the Electrical Passivamentioning

confidence: 99%

“…Both N and P reduce the interface defect state density, while a small portion may enter the SiC substrate and act as an n-type counter dopant. 4 …”

Section: Discussionmentioning

confidence: 99%

“…1 The most important component in an "all-SiC" power circuit is the 4H-SiC power MOSFET. [2][3][4][5][6][7] Electronic performance of the device is intrinsically related to the quality of the gate oxide-SiC interface. One widely used fabrication process to reduce the interface trap density in SiC technology is a nitric oxide (NO) anneal.…”

Section: Introductionmentioning

confidence: 99%

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Concentration, chemical bonding, and etching behavior of P and N at the SiO2/SiC(0001) interface

Liu

et al. 2015

Journal of Applied Physics

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Phosphorous and nitrogen are electrically active species at the SiO2/SiC interface in SiC MOSFETs. We compare the concentration, chemical bonding, and etching behavior of P and N at the SiO2/SiC(0001) interface using photoemission, ion scattering, and secondary ion mass spectrometry. Both interfacial P and N are found to be resistant to buffered HF solution etching at the SiO2/SiC(0001) interface while both are completely removed from the SiO2/Si interface. The medium energy ion scattering results of etched phosphosilicate glass/SiC not only provide an accurate coverage but also indicate that both the passivating nitrogen and phosphorus are confined to within 0.5 nm of the interface. Angle resolved photoemission shows that P and N are likely situated in different chemical environments at the interface. We conclude that N is primarily bound to Si atoms at the interface while P is primarily bound to O and possibly to Si or C. Different interface passivating element coverages and bonding configurations on different SiC crystal faces are also discussed. The study provides insights into the mechanisms by which P and N passivate the SiO2/SiC(0001) interface and hence improve the performance of SiC MOSFETs.

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Section: Relationship Of These Results To the Electrical Passivamentioning

confidence: 99%

Section: Relationship Of These Results To the Electrical Passivamentioning

confidence: 99%

“…Both N and P reduce the interface defect state density, while a small portion may enter the SiC substrate and act as an n-type counter dopant. 4 …”

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Concentration, chemical bonding, and etching behavior of P and N at the SiO2/SiC(0001) interface

Liu

et al. 2015

Journal of Applied Physics

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“…This phenomenon has been observed in nitrogen-implanted 4H-SiC MOSFET. Both these effects (reduction in interface trap and counter-doping) lead to a lower V T and a higher channel mobility [31,32]. …”

Section: Thick Psg Processmentioning

confidence: 99%

Advanced SiC/Oxide Interface Passivation

Sharma¹

2017

New Research on Silicon - Structure, Properties, Technology

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To save energy on an electric power grid, the idea of redesigned 'micro-grids' has been proposed. Implementation of this concept needs power devices that can operate at higher switching speeds and block voltages of up to 20 kV. Out of SiC and GaN wide band gap semiconductors, the former is more suitable for low-as well as high-voltage ranges. SiC exists in different polytypes 3C-, 4H-and 6H-. 4H-SiC due to its wider band gap, 3.26 eV has higher critical electric field of breakdown (E c ) and electron bulk mobility compared to 6H-SiC. Even with all these benefits 4H-SiC full potential has not yet been realized. This is due to high trap densities (D it ) at the interface. In addition to 4H-polytype, in recent years, there is a reignited interest on cubic silicon carbide (3C-SiC), which can be potentially grown heteroepitaxially on 12″ Si substrates, as it would result in a drastic cost reduction of semiconductor devices compared to the successful but exorbitantly expensive SiC hexagonal polytype technology (4H-SiC). In this chapter, we discuss and summarize all different interface passivation techniques or processes that have led to a vast improvement of these (4H-or 3C-SiC/SiO 2 ) interfaces electrically.

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Unipolar Power Switching Devices

Kimoto¹,

Cooper

2014

Fundamentals of Silicon Carbide Technology

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Enhanced Inversion Mobility on 4H-SiC $(\hbox{11}\overline{\hbox{2}} \hbox{0})$ Using Phosphorus and Nitrogen Interface Passivation

Cited by 106 publications

References 19 publications

Concentration, chemical bonding, and etching behavior of P and N at the SiO2/SiC(0001) interface

Concentration, chemical bonding, and etching behavior of P and N at the SiO2/SiC(0001) interface

Advanced SiC/Oxide Interface Passivation

Unipolar Power Switching Devices

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