Unipolar Power Switching Devices

Kimoto, Tsunenobu; Cooper, James A.

doi:10.1002/9781118313534.ch8

Cited by 11 publications

(1 citation statement)

References 19 publications

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“…Individual pJFET active area scaling is also a promising method for future integration approaches. Moreover, for the pJFET channel region, the ionisation rate of aluminium dopands can be expected to increase from 10 % to 55 % for operation at 200°C compared to room temperature [30], [31]. With the pJFET on-state resistance being reciprocally proportional to the ionised acceptors [24], R on,sp is drastically reduced in high temperature environments.…”

Section: Discussionmentioning

confidence: 99%

A Monolithically Integrated SiC Circuit Breaker

Boettcher

Erlbacher

2021

IEEE Electron Device Lett.

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In this letter, a monolithically integrated SiC circuit breaker device providing self-triggered blocking operation is presented. The proposed topology is implemented into a common 4H-SiC JFET technology, which offers conventional cell design and chip scaling opportunities. Basic operation and design implications are discussed on the basis of quasi-static electrical measurements of fabricated nJFET, pJFET and circuit breaker devices. The design of experiment including a variation of channel length and channel doping dose reveals a distinct effect on the design targets, especially on on-state resistance, trigger current and blocking voltage. The investigated devices exhibit trigger current density levels of up to 2.8 A/cm² and self-sustained blocking capability up to 795 V DC-link voltage. On-state resistance at room temperature is determined to 0.93 Ωcm² but drastically decreases at elevated temperatures, as is shown in the experiments.

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Section: Discussionmentioning

confidence: 99%

A Monolithically Integrated SiC Circuit Breaker

Boettcher

Erlbacher

2021

IEEE Electron Device Lett.

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Study on the Oxygen Partial Pressure Dependent Annealing Effect for SiO₂/SiC Stack

Zhang,

You,

Wang

et al. 2024

Adv Elect Materials

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Post‐oxidation annealing in oxygen (O2) ambient can improve the quality of the SiO2/SiC stack without introducing foreign atoms. In order to reveal the annealing mechanism at different oxygen partial pressures (P(O2)), this work focuses on the dependence of the annealing effect on P(O2) in a wide range from 0.01 Pa to 101 kPa for SiO2/SiC stack. In order to minimize the C‐related defects generated during SiC oxidation, the SiO2/SiC stacks are formed by oxidizing the deposited Si on the SiC epitaxial layer. The electrical characteristics of the annealed samples show that low P(O2) is beneficial to improve the interface quality, and high P(O2) is beneficial to improve the oxide layer quality. In addition, time of flight secondary ion mass spectrometry and X‐ray photoelectron spectroscopy analysis shows that the distribution and filling of oxygen vacancies (V[O]) are consistent with the electrical results. Finally, a model describing V[O] filling amount with P(O2) is proposed to quantitatively characterize the dependence of the annealing effect on P(O2), which shows that the filling amount of V[O] is proportional to P(O2)n (n∼0.065). This model provides theoretical support for improving the quality of SiC MOS by O2 annealing.

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Water absorption in thermally grown oxides on SiC and Si: Bulk oxide and interface properties

Liu

Yakshinskiy

et al. 2014

Applied Physics Letters

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We combine nuclear reaction analysis and electrical measurements to study the effect of water exposure (D2O) on the n-type 4H-SiC carbon face (0001¯) MOS system and to compare to standard silicon based structures. We find that: (1) The bulk of the oxides on Si and SiC behave essentially the same with respect to deuterium accumulation; (2) there is a significant difference in accumulation of deuterium at the semiconductor/dielectric interface, the SiC C-face structure absorbs an order of magnitude more D than pure Si; (3) standard interface passivation schemes such as NO annealing greatly reduce the interfacial D accumulation; and (4) the effective interfacial charge after D2O exposure is proportional to the total D amount at the interface.

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Unipolar Power Switching Devices

Cited by 11 publications

References 19 publications

A Monolithically Integrated SiC Circuit Breaker

A Monolithically Integrated SiC Circuit Breaker

Study on the Oxygen Partial Pressure Dependent Annealing Effect for SiO₂/SiC Stack

Water absorption in thermally grown oxides on SiC and Si: Bulk oxide and interface properties

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Unipolar Power Switching Devices

Cited by 11 publications

References 19 publications

A Monolithically Integrated SiC Circuit Breaker

A Monolithically Integrated SiC Circuit Breaker

Study on the Oxygen Partial Pressure Dependent Annealing Effect for SiO2/SiC Stack

Water absorption in thermally grown oxides on SiC and Si: Bulk oxide and interface properties

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Product

Resources

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Study on the Oxygen Partial Pressure Dependent Annealing Effect for SiO₂/SiC Stack