Enhanced growth of low-resistivity NiSi on epitaxial Si0.7Ge0.3 on (001)Si with a sacrificial amorphous Si interlayer

Abstract

Articles you may be interested inSn-mediated Ge ∕ Ge ( 001 ) growth by low-temperature molecular-beam epitaxy: Surface smoothening and enhanced epitaxial thickness J. Appl. Phys. 97, 044904 (2005); 10.1063/1.1848188 Lattice diffusion and surface segregation of B during growth of SiGe heterostructures by molecular beam epitaxy: Effect of Ge concentration and biaxial stress

Stress-induced morphology and fine-line stability enhancement of NiSi on poly-SiGe with a buffer polycrystalline silicon interlayer

“…The uniform interface is likely caused by the Ge, which is expelled from the Ni-Si-Ge compound, blocked the Ni diffusion paths, and resulted in the delay in the formation of NiSi 2 . 13,14 Similar results were also reported for CoSi 2 formed on a SiGe layer. 15 This observation implies that the insertion of the poly-Si film in sample ͑iii͒ maintained the film's continuance and curtailed agglomeration in the silicide film.…”

“…In addition, the Ge layer between the silicide and poly-SiGe film also play the role to retard layer inversion. [13][14][15] This model can also explain the behavior of the Ni͑Si, Ge͒ fine lines of sample ͑ii͒. The thermal stability of silicided-narrow lines is determined by the laterally confined areas, and larger grains induce linewidth-dependent degradation.…”

Improvement of Boron Doping in SiGe Raised Sources and Drains for FD-SOI Technology by Carbon Incorporation

“…The selective epitaxial growth of SiGe:B and SiGe films on such cleaned surfaces has been realized with Epi 300 Centura setup from Applied Materials® using reduced pressure (RP) chemical vapor deposition (CVD) [5]. The epitaxial layers grow in the temperature range of 550 -700 °C at 10 Torr with SiH 2 Cl 2 and SiH 4 gases for SiGe:B and SiGe channel growth.…”

Formation of the complete range of Ti5Si3−xGex solid solutions via mechanically induced self-sustained reactions

“…In general, titanium silicides and germanides are good electrical conductors and have similar resistivities to metals and alloys. The potential use of silicides as conductors has motivated thin-film silicide research [4,5], including applications such as (a) Schottky barriers and ohmic contacts [6,7], (b) gates and interconnection metals, and (c) epitaxial conductors in heterostructures [8].…”