Enhanced field emission properties of the copper sulfide nanowalls with optimized 3-D morphology

He, Ru-Mei; Chen, Jianbiao; Qi, Bi-Juan; Wang, Chengwei

doi:10.1016/j.physe.2018.04.027

Cited by 8 publications

(1 citation statement)

References 24 publications

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“…The crystal plane spacing of 0.311 and 0.246 nm corresponds to (222) planes of Covellite CuS and (313) of Chalcocite Cu 2 S, respectively. The corresponding selected area electron diffraction (SAED) are shown in the inset of figure 3(b).SAED pattern shows ring pattern with spots due to the nano crystallites with random orientation[36,37]. To understand their chemical structure, nanosheets have been characterized by high-resolution XPS.…”

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Cu _x S nanosheets with controllable morphology and alignment for memristor devices

Chen¹,

Zhang²,

Jiang³

et al. 2022

Nanotechnology

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In electrochemical metallization memristor, the performance of resistive switching (RS) is influenced by the forming and fusing of conductive filaments within the dielectric layer. However, the growth of filaments, mostly, is unpredictable and uncontrollable. For this reason, to optimize ions migration paths in the dielectric layer itself in the Al/CuxS/Cu structure, uniform CuxS nanosheets films have been synthesized using anodization for various time spans. And the Al/CuxS/Cu devices show a low operating voltage of less than 0.3 V and stable RS performance. At the same time, a reversible negative differential resistance (NDR) behavior is also demonstrated. And then, the mechanism of repeatable coexistence of RS effect and NDR phenomenon is investigated exhaustively. Analyses suggest that the combined physical model of space-charge limited conduction (SCLC) mechanism and conductive filaments bias-induced migration of Cu ions within the CuxS dielectric layer is responsible for the RS operation, meanwhile, a Schottky barrier caused by copper vacancy at the CuxS/Cu interface is demonstrated to explain the NDR phenomenon. This work will develop a new way to optimize the performance of non-volatile memory with multiple physical attributes in the future.

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confidence: 99%

Cu _x S nanosheets with controllable morphology and alignment for memristor devices

Chen¹,

Zhang²,

Jiang³

et al. 2022

Nanotechnology

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Copper(II) sulfide nanostructures and its nanohybrids: recent trends, future perspectives and current challenges

Singh

2023

Front. Mater. Sci.

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Advances in nanostructure thin film materials for solar cell applications

Paul,

Mandal

2024

Comprehensive Materials Processing

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Enhanced field emission properties of the copper sulfide nanowalls with optimized 3-D morphology

Cited by 8 publications

References 24 publications

Cu _x S nanosheets with controllable morphology and alignment for memristor devices

Cu _x S nanosheets with controllable morphology and alignment for memristor devices

Copper(II) sulfide nanostructures and its nanohybrids: recent trends, future perspectives and current challenges

Advances in nanostructure thin film materials for solar cell applications

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Enhanced field emission properties of the copper sulfide nanowalls with optimized 3-D morphology

Cited by 8 publications

References 24 publications

Cu x S nanosheets with controllable morphology and alignment for memristor devices

Cu x S nanosheets with controllable morphology and alignment for memristor devices

Copper(II) sulfide nanostructures and its nanohybrids: recent trends, future perspectives and current challenges

Advances in nanostructure thin film materials for solar cell applications

Contact Info

Product

Resources

About

Cu _x S nanosheets with controllable morphology and alignment for memristor devices

Cu _x S nanosheets with controllable morphology and alignment for memristor devices