Enhanced field emission of ZnO nanowire arrays by the control of their structures

He, Jialun; Zheng, Xiang; Hong, Xuda; Wang, Weiping; Cao, Yiyan; Chen, Ting; Kong, Lijing; Wu, Yaping; Wu, Zhiming; Kang, Junyong

doi:10.1016/j.matlet.2017.12.134

Cited by 12 publications

(4 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Due to this, it is important to understand surface the roughness and morphology of the electrode to accurately estimate field emission current. Commonly observed morphologies are nanorods, nanowires, nanotubes, nanosheets, nanoneedles, nanocones, nanoflowers, nanofiber, nanoterapods, and nanocryastallites . The analysis of these studies reveals that although β is different for different morphologies, it is in the same order of magnitude.…”

Section: Enhancement (Sources)mentioning

confidence: 99%

Electron Emission Devices for Energy‐Efficient Systems

Nirantar

Ahmed

Bhaskaran

et al. 2019

Advanced Intelligent Systems

View full text Add to dashboard Cite

Artificial intelligence platforms, high-speed computation, and data handling systems increasingly need energy-efficient systems. Electron emission was fundamental to the development of transistors and electronics over seven decades ago. This technology has a renewed emergence and includes implications in diverse fields ranging from electronics, telecommunication, defense, space exploration, medical science, and material science to televisions and displays. For such a vital field, a critical review of theories, current research directions, applications, and future prospects is invaluable. Herein, the ongoing research directions adopted to enhance the emitter performance are reviewed and the relative degree of their success is compared. This is supported by an overview of key electron emission, transport mechanisms, and ways to tune a particular mechanism for energy-efficient applications. The diverse range of applications in this field, with a particular focus on electronics, is outlined. Exciting current developments in electron field emission that could revolutionize the electronic industry with a resurgence of nanoscale field emission transistor in the air medium are also discussed. Figure 2. Representation of different electron emission mechanisms: a) Comparison of thermionic emission, Schottky emission, FN tunnelling, and direct tunnelling with schematic energy band diagram. b) Typical thermionic emission plot. c) Typical Schottky plot. (b,c)Reproduced with permission. [3]

show abstract

Section: Enhancement (Sources)mentioning

confidence: 99%

Electron Emission Devices for Energy‐Efficient Systems

Nirantar

Ahmed

Bhaskaran

et al. 2019

Advanced Intelligent Systems

View full text Add to dashboard Cite

show abstract

“…As an example, J. He et al [ 91 ] synthesized four kinds of ZnO nanostructure and found that the best field-emission properties did not come from the sample with the sharpest tip structure. They attributed it to the fact that the sharpest tip structure samples tended to connect with each other, leading to intensive screening effect.…”

Section: Field Emissionmentioning

confidence: 99%

Recent Progress on ZnO Nanowires Cold Cathode and Its Applications

Chen

Deng

et al. 2021

Nanomaterials

View full text Add to dashboard Cite

A cold cathode has many applications in high frequency and high power electronic devices, X-ray source, vacuum microelectronic devices and vacuum nanoelectronic devices. After decades of exploration on the cold cathode materials, ZnO nanowire has been regarded as one of the most promising candidates, in particular for large area field emitter arrays (FEAs). Numerous works on the fundamental field emission properties of ZnO nanowire, as well as demonstrations of varieties of large area vacuum microelectronic applications, have been reported. Moreover, techniques such as modifying the geometrical structure, surface decoration and element doping were also proposed for optimizing the field emissions. This paper aims to provide a comprehensive review on recent progress on the ZnO nanowire cold cathode and its applications. We will begin with a brief introduction on the synthesis methods and discuss their advantages/disadvantages for cold cathode applications. After that, the field emission properties, mechanism and optimization will be introduced in detail. Then, the development for applications of large-area ZnO nanowire FEAs will also be covered. Finally, some future perspectives are provided.

show abstract

“…One-dimensional (1D) materials are considered ideal candidates for large-area FEAs due to their high aspect ratio and unique properties [ 7 , 8 , 9 , 10 , 11 ]. In particular, ZnO nanowires have the advantages of large-area uniform preparation, low cost and good compatibility with microfabrication techniques, and thus extensive studies have been carried out on the field emission properties of ZnO nanowires [ 12 , 13 , 14 , 15 , 16 , 17 ]. Gated ZnO nanowire FEAs have been fabricated and proven to be capable of emission current modulation and addressability [ 18 , 19 , 20 , 21 ].…”

Section: Introductionmentioning

confidence: 99%

Optimizing Performance of Coaxis Planar-Gated ZnO Nanowire Field-Emitter Arrays by Tuning Pixel Density

et al. 2022

View full text Add to dashboard Cite

Gated ZnO nanowire field emitter arrays (FEAs) have important applications in large-area vacuum microelectronic devices such as flat panel X-ray sources and photodetectors. As the application requires high-pixel-density FEAs, how the pixel density affects the emission performance of the gated ZnO nanowire FEAs needs investigating. In this paper, the performance of coaxis planar -gated ZnO nanowire FEAs was simulated under different pixel sizes while keeping the lateral geometric parameter in proportion. The variations in emission current and gate modulation with pixel size were obtained. Using the obtained device parameters, the coaxis planar-gated ZnO nanowire FEAs were prepared. Field emission measurement results showed that a current density of 3.2 mA/cm2 was achieved from the fabricated ZnO nanowire FEAs when the gate voltage was 140 V. A transconductance of 253 nS was obtained, indicating effective gate control. The improved performance is attributed to optimized gate modulation.

show abstract

Enhanced field emission of ZnO nanowire arrays by the control of their structures

Cited by 12 publications

References 22 publications

Electron Emission Devices for Energy‐Efficient Systems

Electron Emission Devices for Energy‐Efficient Systems

Recent Progress on ZnO Nanowires Cold Cathode and Its Applications

Optimizing Performance of Coaxis Planar-Gated ZnO Nanowire Field-Emitter Arrays by Tuning Pixel Density

Contact Info

Product

Resources

About