Enhanced ferroelectricity in epitaxial Hf0.5Zr0.5O2 thin films integrated with Si(001) using SrTiO3 templates

Lyu, Jike; Fina, Ignasi; Bachelet, Romain; Saint-Girons, Guillaume; Estandía, Saúl; Gàzquez, Jaume; Fontcuberta, J.; Sánchez, F.

doi:10.1063/1.5096002

Cited by 65 publications

(96 citation statements)

References 33 publications

(46 reference statements)

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“…S12, ESI †). Absence of wake-up is common in epitaxial films grown on different substrates, 11,24,26 in contrast with polycrystalline hafnia films. The different behaviors can be due to either the different microstructure (epitaxial or polycrystalline films) or the different electrodes (LSMO or TiN bottom electrodes).…”

Section: Resultsmentioning

confidence: 99%

High polarization, endurance and retention in sub-5 nm Hf_0.5Zr_0.5O₂ films

et al. 2020

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Ferroelectric HfO 2 is a promising material for new memory devices, but significant improvement of its important properties is necessary for practical application. However, previous literature shows that a dilemma exists between polarization, endurance and retention. Since all these properties should be simultaneously high, overcoming this issue is of the highest relevance. Here, we demonstrate that high crystalline quality sub-5 nm Hf 0.5 Zr 0.5 O 2 capacitors, integrated epitaxially with Si(001), present combined high polarization (2P r of 27 µC cm −2 in the pristine state), endurance (2P r > 6 µC cm −2 after 10 11 cycles) and retention (2P r > 12 µC cm −2 extrapolated at 10 years) using the same poling conditions (2.5 V). This achievement is demonstrated in films thinner than 5 nm, thus opening bright possibilities in ferroelectric tunnel junctions and other devices.This journal is

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Section: Resultsmentioning

confidence: 99%

High polarization, endurance and retention in sub-5 nm Hf_0.5Zr_0.5O₂ films

et al. 2020

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“…In this regard, epitaxial films [15][16][17][18][19] can be useful to reveal the underlying mechanisms governing HfO 2 properties, as well as to prototype nanometric HfO 2 -based devices. Examples of the usefulness of epitaxial films include observation of coercive electric field (E c ) scaling with thickness (t) according to the E c t -2/3 dependence (elusive for polycrystalline HfO 2 ), 20 absence of wake-up effect, [21][22][23] and disentanglement and control of ionic and electronic transport contributions in tunnel devices. 24 Since these significant advances may result crucial for the further improvement of polycrystalline ferroelectric HfO 2 , the development of epitaxial HfO 2 is of major relevance.…”

Section: Introductionmentioning

confidence: 99%

Domain-Matching Epitaxy of Ferroelectric Hf_0.5Zr_0.5O₂(111) on La_2/3Sr_1/3MnO₃(001)

Estandía

Dix

Chisholm

et al. 2020

Crystal Growth & Design

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Epitaxial ferroelectric HfO 2 films are the most suitable to investigate intrinsic properties of the material and for prototyping emerging devices. Ferroelectric Hf 0.5 Zr 0.5 O 2 (111) films have been epitaxially stabilized on La 2/3 Sr 1/3 MnO 3 (001) electrodes. This epitaxy, considering the symmetry dissimilarity and the huge lattice mismatch, is not compatible with conventional mechanisms of epitaxy. To gain insight into the epitaxy mechanism, scanning transmission electron microscopy characterization of the interface was performed, revealing arrays of dislocations with short periodicities. These observed periodicities agree with the expected for domain matching epitaxy, indicating that this unconventional mechanism could be the prevailing factor in the stabilization of ferroelectric Hf 0.5 Zr 0.5 O 2 with (111) orientation in the epitaxial Hf 0.5 Zr 0.5 O 2 (111)/La 2/3 Sr 1/3 MnO 3 (001) heterostructure.

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“…For a given pair of electrodes, having  i ≠  j , (P(↑)) and (P(↓)) are different, therefore two distinct resistance states can be obtained for the device when polarizing the ferroelectric barrier in opposite directions. [3] The change in resistance, so-called electroresistance (ER), is quantified by ER = [R(V W + )-achieved, [20][21][22][23][24][25][26] opening the door to engineer epitaxial FeTJ and magnetic-FeTJ. [25] The ferroelectric character of ultrathin (few nanometer layers) epitaxial HZO films has been assessed by piezoelectric force microscopy and by recording P-E loops on micrometric electrodes.…”

Section: Introductionmentioning

confidence: 99%

Unraveling Ferroelectric Polarization and Ionic Contributions to Electroresistance in Epitaxial Hf_0.5Zr_0.5O₂ Tunnel Junctions

Sulzbach

Estandía

Long

et al. 2019

Adv Elect Materials

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Tunnel devices based on ferroelectric Hf 0.5 Zr 0.5 O 2 (HZO) barriers hold great promises for emerging data storage and computing technologies. The resistance state of the device can be changed by a suitable writing voltage. However, the microscopic mechanisms leading to the resistance change are an intricate interplay between ferroelectric polarization controlled barrier properties and defect-related transport mechanisms. Here is shown the fundamental role of the microstructure of HZO films setting the balance between those contributions. The oxide film presents coherent or incoherent grain boundaries, associated to the existence of monoclinic and orthorhombic phases in HZO films, which are dictated by the mismatch with the substrates for epitaxial growth. These grain boundaries are the toggle that allows to obtain either large (up to ≈ 450 %) and fully reversible genuine polarization controlled electroresistance when only the orthorhombic phase is present or an irreversible and extremely large (≈ 10 3 -10 5 %) electroresistance when both phases coexist.are the resistances after polarizing the junction with writing voltages V W + or V W and R min (V W +,-) is the minimum resistance among these states. Accordingly, binary high (OFF) and low resistance (ON) states can be written in a ferroelectric memory cell and read by probing its resistance. It has also been shown that by performing minor polarization loops, ferroelectric tunnel devices can store information in different resistive states, mimicking the functioning of a memristive element. [4,5] This approach has been successfully achieved by using ferroelectric perovskites such as BaTiO 3 , [6][7][8][9] Pb(Zr 0.2

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Enhanced ferroelectricity in epitaxial Hf0.5Zr0.5O2 thin films integrated with Si(001) using SrTiO3 templates

Cited by 65 publications

References 33 publications

High polarization, endurance and retention in sub-5 nm Hf_0.5Zr_0.5O₂ films

High polarization, endurance and retention in sub-5 nm Hf_0.5Zr_0.5O₂ films

Domain-Matching Epitaxy of Ferroelectric Hf_0.5Zr_0.5O₂(111) on La_2/3Sr_1/3MnO₃(001)

Unraveling Ferroelectric Polarization and Ionic Contributions to Electroresistance in Epitaxial Hf_0.5Zr_0.5O₂ Tunnel Junctions

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Enhanced ferroelectricity in epitaxial Hf0.5Zr0.5O2 thin films integrated with Si(001) using SrTiO3 templates

Cited by 65 publications

References 33 publications

High polarization, endurance and retention in sub-5 nm Hf0.5Zr0.5O2 films

High polarization, endurance and retention in sub-5 nm Hf0.5Zr0.5O2 films

Domain-Matching Epitaxy of Ferroelectric Hf0.5Zr0.5O2(111) on La2/3Sr1/3MnO3(001)

Unraveling Ferroelectric Polarization and Ionic Contributions to Electroresistance in Epitaxial Hf0.5Zr0.5O2 Tunnel Junctions

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High polarization, endurance and retention in sub-5 nm Hf_0.5Zr_0.5O₂ films

High polarization, endurance and retention in sub-5 nm Hf_0.5Zr_0.5O₂ films

Domain-Matching Epitaxy of Ferroelectric Hf_0.5Zr_0.5O₂(111) on La_2/3Sr_1/3MnO₃(001)

Unraveling Ferroelectric Polarization and Ionic Contributions to Electroresistance in Epitaxial Hf_0.5Zr_0.5O₂ Tunnel Junctions