Abstract:Fluorite structured ferroelectrics, such as (Hf, Zr)O2, attract much interest due to their scalability and compatibility with complementary metal‐oxide semiconductors, which make them superior to the conventional ferroelectrics. However, their reliability issues, including their limited endurance, are yet to be resolved. Such issues have been reported to be strongly correlated to the formation and drift of oxygen vacancies concentrated in the interfacial region adjacent to TiN electrodes. In this study, the ef… Show more
“…The recognizable polycrystalline of HfZrO layer is a characteristic of HfO 2 -based ferroelectric materials. 15,16) To further analyze the phase structure of the HfZrO layer, a Nano Beam Diffraction (NBD) is carried out. From the diffraction pattern, we calculate the interplanar distance which is about 2.92 Å by the Gatan Digital Micrograph and the result is in accord with (111) orthorhombic phase of HfO 2 -based ferroelectric materials.…”
We investigate the voltage-controlled magnetism effect of HfZrO/CoFeB hybrid film and Hall device with perpendicular magnetic anisotropy. The magnetization vs. magnetic field experiments and anomalous Hall experiments before and after applying voltage are performed. The results exhibit that the coercive field of samples keep unchanged while the saturation magnetization shows permanent increase (more than 60%), which is regardless of the direction of applied voltage. Different from conventional voltage-controlled magnetic anisotropy (VCMA), in our work, only the saturation magnetization is enhanced by the applied voltage without trading off other magnetic parameters of CoFeB. Thus, such a finding proposes a more efficient voltage-controlled method to achieve magnetic memory device with high thermal stability, high tunnel magnetoresistance (TMR) and low switching current for magneto-resistive random-access memory (MRAM) under scaling beyond 2X nm.
“…The recognizable polycrystalline of HfZrO layer is a characteristic of HfO 2 -based ferroelectric materials. 15,16) To further analyze the phase structure of the HfZrO layer, a Nano Beam Diffraction (NBD) is carried out. From the diffraction pattern, we calculate the interplanar distance which is about 2.92 Å by the Gatan Digital Micrograph and the result is in accord with (111) orthorhombic phase of HfO 2 -based ferroelectric materials.…”
We investigate the voltage-controlled magnetism effect of HfZrO/CoFeB hybrid film and Hall device with perpendicular magnetic anisotropy. The magnetization vs. magnetic field experiments and anomalous Hall experiments before and after applying voltage are performed. The results exhibit that the coercive field of samples keep unchanged while the saturation magnetization shows permanent increase (more than 60%), which is regardless of the direction of applied voltage. Different from conventional voltage-controlled magnetic anisotropy (VCMA), in our work, only the saturation magnetization is enhanced by the applied voltage without trading off other magnetic parameters of CoFeB. Thus, such a finding proposes a more efficient voltage-controlled method to achieve magnetic memory device with high thermal stability, high tunnel magnetoresistance (TMR) and low switching current for magneto-resistive random-access memory (MRAM) under scaling beyond 2X nm.
“…These layers adversely interfere with FE performance, resulting in polarization degradation and reliability issues. 7–10…”
Section: Introductionmentioning
confidence: 99%
“…Kim et al reported that a thin (1–2 nm) HfO x N y ( x = ∼0.61, y = ∼0.72) interfacial layer, grown by reactive sputtering, could efficiently suppress such adverse impacts by TiN oxidation. 9 The thin interfacial layers were in situ or ex situ oxidized during their growth and subsequent atomic layer deposition (ALD) of the Hf 0.5 Zr 0.5 O 2 (HZO) FE film. This oxidized interfacial layer protected the TiN film from oxidation-induced degradation.…”
Section: Introductionmentioning
confidence: 99%
“…Owing to the favorable impact of the HfO x N y interfacial layer, the remanent polarization ( P r ) of the 10 nm-thick HZO film was improved from ∼15 to ∼20 μC cm −2 . 9…”
Flowchart illustrating how the films are deposited (a) without and (b) with cleaning step, and Auger electron spectroscopy depth profile of 15 nm HfNx deposited with precleaning step, before annealing (c) and after 900 °C annealing at NH3 atmosphere.
“…5 However, with the discovery of ferroelectricity in fluorite structure in 2011, modern researchers put their attention to using these materials for advanced applications because of their low dielectric constant, simple structure, low leakage current, and small unit cell volume compared to perovskite and pyrochlore materials. 6,7 Ongoing development in smart electronic devices makes fluorite structure more imperative than others to be utilized for micromechanical and fast-switching applications. 8…”
Confirmation of structural phase transition mediated by La-substitution at Nd-sites in Nd2Ce2O7 pyrochlores and optimization of recoverable energy density, energy loss density and fast switching charge capability.
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