2013
DOI: 10.1063/1.4816837
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Enhanced external radiative efficiency for 20.8% efficient single-junction GaInP solar cells

Abstract: We demonstrate 1.81 eV GaInP solar cells approaching the Shockley-Queisser limit with 20.8% solar conversion efficiency, 8% external radiative efficiency, and 80–90% internal radiative efficiency at one-sun AM1.5 global conditions. Optically enhanced voltage through photon recycling that improves light extraction was achieved using a back metal reflector. This optical enhancement was realized at one-sun currents when the non-radiative Sah-Noyce-Shockley junction recombination current was reduced by placing the… Show more

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Cited by 273 publications
(216 citation statements)
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References 23 publications
(26 reference statements)
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“…High ERE cells are already being developed for III-V materials to achieve the highest possible voltage and efficiency, and these cells are ideal candidates for a broader applicability of the angle restriction approach. 10 As further improvements are made in III-V cell technology and other materials reach the high ERE regime, this approach holds promise for signicantly increasing cell efficiencies in a at plate geometry. View Article Online…”
Section: Resultsmentioning
confidence: 99%
“…High ERE cells are already being developed for III-V materials to achieve the highest possible voltage and efficiency, and these cells are ideal candidates for a broader applicability of the angle restriction approach. 10 As further improvements are made in III-V cell technology and other materials reach the high ERE regime, this approach holds promise for signicantly increasing cell efficiencies in a at plate geometry. View Article Online…”
Section: Resultsmentioning
confidence: 99%
“…Each junction of our 4J solar cell, including the metamorphic junctions, has very respectable IRE quality. Indeed, the GaInP junction is very high since we have used a rear-heterojunction design 10 and, while the GaAs junction could be improved at one-sun, it becomes nearly perfect at high currents.…”
Section: Electroluminescencementioning
confidence: 99%
“…The EL light emitted from each junction is quantified 1,10 as the forward injection current density is varied in the dark. The emitted spectra shown in figure 3 were normalized by the spectroradiometer calibration to give units of photon flux / area / wavelength.…”
Section: Electroluminescencementioning
confidence: 99%
“…1 shows representative performance maps obtained for similar inverted GalnP/GaAs 2J solar cells with different magnitudes of LC as quantified by the LC factor (7712) [4]. The different LC factors are obtained by using GalnP top cells with different internal luminescence efficiencies as their junction position is changed, as described in [10]. Iso-P max contours are plotted against the equivalent number of suns in each subcell.…”
Section: Performance Map Measurement Techniquementioning
confidence: 99%