2022
DOI: 10.1002/adom.202201059
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Enhanced Emission from Defect Levels in Multilayer MoS2

Abstract: The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adom.202201059.

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Cited by 9 publications
(16 citation statements)
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“…In contrast, in a multilayer MoS 2 , it has been shown that large thermal energies are essential to change the electronic band structure and to enable the population inversion and subsequent radiative relaxations from the defect levels. [68] In agreement with ref. [68], we have also observed the suppression of PL emissions from defect-bound excitons in multilayer MoS 2 (see Section S11, Supporting Information).…”
Section: [27]supporting
confidence: 92%
See 1 more Smart Citation
“…In contrast, in a multilayer MoS 2 , it has been shown that large thermal energies are essential to change the electronic band structure and to enable the population inversion and subsequent radiative relaxations from the defect levels. [68] In agreement with ref. [68], we have also observed the suppression of PL emissions from defect-bound excitons in multilayer MoS 2 (see Section S11, Supporting Information).…”
Section: [27]supporting
confidence: 92%
“…[68] In agreement with ref. [68], we have also observed the suppression of PL emissions from defect-bound excitons in multilayer MoS 2 (see Section S11, Supporting Information).…”
Section: [27]supporting
confidence: 92%
“…We did not observe any superfluorescence [56] or stimulated emission as observed in the multilevel energy system. [57] Again we look at the irreversible and reversible relaxation phenomenon for RPP of n = 2. Figure 3b shows normalized PLs relative to the LES peak when the laser power was initially at 0.2 mW, increased to 3.5 mW, and then returned to 0.2 mW.…”
Section: Figure 1amentioning
confidence: 99%
“…A possible breakthrough in this area could be achieved through a combination of stimulated emission and single-photon emission, as demonstrated in the work by Wei et al [21] Strain engineering, [22][23][24][25][26][27][28] as an additional degree of freedom, has been used for controlling and manipulating the electrical and optical properties of 2D semiconductors. Thermal strains induced through laser excitation, mechanical strains through wrinkles, or tension strains have been shown to tune the direct bandgap to indirect and vice versa, [29][30][31] enhance PL emission [29,32,33] and single-photon emission, [3,27,[34][35][36][37] and improve carrier mobilities in TMD-based transistors. [38] Excitonic lasers based on free excitons in monolayer TMDs [39,40] have been realized by integrating monolayers into microdisk resonators or photonic crystal cavity.…”
Section: Introductionmentioning
confidence: 99%