Antoncik has criticized both the conclusions and elements of the modeling approach in a previously published article on dopant diffusion in silicon (S. T. Dunham and C. D. Wu [J. Appl. Phys. 78, 2362 (1995)]). As is shown in this reply, those criticisms are without merit and the alternative explanation proposed to explain the rapid diffusivity increase observed at high donor concentrations is based on an analysis which contains a series of critical errors.