Reply to ‘‘Comment on ‘Atomistic models of vacancy-mediated diffusion in silicon’ ’’ [J. Appl. Phys. <b>78</b>, 2362 (1995)]

Dunham, Scott T.

doi:10.1063/1.362681

Journal of Applied Physics

1996

DOI: 10.1063/1.362681

|View full text |Cite|

Reply to ‘‘Comment on ‘Atomistic models of vacancy-mediated diffusion in silicon’ ’’ [J. Appl. Phys. 78, 2362 (1995)]

Scott T. Dunham

Abstract: Antoncik has criticized both the conclusions and elements of the modeling approach in a previously published article on dopant diffusion in silicon (S. T. Dunham and C. D. Wu [J. Appl. Phys. 78, 2362 (1995)]). As is shown in this reply, those criticisms are without merit and the alternative explanation proposed to explain the rapid diffusivity increase observed at high donor concentrations is based on an analysis which contains a series of critical errors.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

1998

2012

Publication Types

Select...

Article5

Relationship

Self Cite0

Independent5

Authors

Journals

Cited by 17 publications

(31 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The methodology and parameters used here were given in a recent study, 27 which predicted the migration of clusters in Ge. In contrast to the assumption of Dunham and Wu, 39 we predict that the migration enthalpy barriers are significantly affected by the presence of different dopant atoms in Ge ͑see Table I͒. Furthermore, as discussed by Höhler et al, 41 oversized impurities in Ge prefer the split-V ͑or bond-centered͒ configuration, in which the impurity atom is surrounded by two semivacancies.…”

contrasting

confidence: 47%

“…1 the step from ͑2͒ to ͑3͔͒ assumed by Dunham and Wu. 39 Interestingly, it can be observed from Table I that for the acceptor atoms ͑Al, Ga, and In͒, most second and third nearest neighbor interactions are repulsive, whereas Si repels a V even at the first nearest neighbor site. For the acceptor atoms, this indicates that a V will bind with the dopant, but when it moves away, it will likely break free.…”

mentioning

confidence: 99%

“…2 in Ref. 39 and Table I͒. The analysis by Dunham and Wu 39 contains a number of assumptions, the most significant being that H V m remains constant regardless of the relative position of the V and the dopant. To test this assumption, we implemented the linear synchronous transit ͑LST͒ method 40 to directly calculate the actual migration enthalpy barriers.…”

mentioning

confidence: 99%

“…39 For example, Fig. 1 represents the differences in the AsV barriers between the Dunham and Wu 39 analysis and LST.…”

mentioning

confidence: 99%

“…In an analysis of V-mediated diffusion in a diamond structure, Dunham and Wu 39 defined the activation enthalpy of diffusion, Q a , as…”

mentioning

confidence: 99%

See 4 more Smart Citations

Vacancy-mediated dopant diffusion activation enthalpies for germanium

Chroneos

Bracht

Grimes

et al. 2008

Applied Physics Letters

135

113

View full text Add to dashboard Cite

Electronic structure calculations are used to predict the activation enthalpies of diffusion for a range of impurity atoms ͑aluminium, gallium, indium, silicon, tin, phosphorus, arsenic, and antimony͒ in germanium. Consistent with experimental studies, all the impurity atoms considered diffuse via their interaction with vacancies. Overall, the calculated diffusion activation enthalpies are in good agreement with the experimental results, with the exception of indium, where the most recent experimental study suggests a significantly higher activation enthalpy. Here, we predict that indium diffuses with an activation enthalpy of 2.79 eV, essentially the same as the value determined by early radiotracer studies. © 2008 American Institute of Physics. ͓DOI: 10.1063/1.2918842͔ Germanium ͑Ge͒ has the potential to replace silicon ͑Si͒ in advanced nanoelectronic devices because of the higher mobility of holes and electrons, compatibility with Si manufacturing processes, increased dopant solubility, and smaller band gap. 1 The precise control required for the fabrication of these devices would be greatly aided by an accurate determination of the diffusion properties of impurities in Ge. 2 This is particularly important for donor impurities for which activation control can be problematic. 3 In previous studies, it has been concluded that most impurities mainly occupy substitutional lattice sites in Ge and, with the exception of boron ͑B͒, dopant diffusion is mainly mediated by vacancies ͑V͒ as interstitial mechanisms typically have significantly higher activation enthalpies. 2, Aluminium ͑Al͒, gallium ͑Ga͒, indium ͑In͒, and B are acceptor atoms that can potentially be used as p-type dopants in Ge technology. Recent experiments 4 on B diffusion in Ge yield an activation enthalpy of 4.65 eV that agrees with earlier results, but the absolute values of the B diffusion coefficients are several orders of magnitude lower than those reported earlier. 5 Previous experimental studies on Al diffusion yield activation enthalpies in the range of 3.2-3.45 eV. 6,7 Södervall et al. 8 obtained an activation enthalpy of 3.31 eV for Ga diffusion in Ge. This value is supported by the more recent experimental studies of Riihimäki et al. 9 who determined an activation enthalpy of 3.21 eV for Ga diffusion in Ge via a V-mediated mechanism. The spread in the data reported for the activation enthalpy of In diffusion in Ge is especially large ͑0.85 eV͒. The radiotracer studies of Pantaleev 10 suggest a value of 2.78 eV, whereas the In profiles measured by Dorner et al. 11 by means of secondary ion mass spectrometry ͑SIMS͒ yield a value of 3.63 eV.Carbon ͑C͒, Si, and tin ͑Sn͒ are important isovalent impurities. C atoms have been observed to be relatively immobile; however, they can retard the diffusion of phosphorus ͑P͒, arsenic ͑As͒, and antimony ͑Sb͒ atoms in Ge. 26,27 Recent experimental studies by Silvestri et al. 15 ͑using SIMS͒ concluded that Si diffusion in Ge is mediated by V with an activation enthalpy of 3.32 eV, whereas previous studies ...

show abstract

contrasting

confidence: 47%

mentioning

confidence: 99%

mentioning

confidence: 99%

“…39 For example, Fig. 1 represents the differences in the AsV barriers between the Dunham and Wu 39 analysis and LST.…”

mentioning

confidence: 99%

“…In an analysis of V-mediated diffusion in a diamond structure, Dunham and Wu 39 defined the activation enthalpy of diffusion, Q a , as…”

mentioning

confidence: 99%

See 3 more Smart Citations

Vacancy-mediated dopant diffusion activation enthalpies for germanium

Chroneos

Bracht

Grimes

et al. 2008

Applied Physics Letters

135

113

View full text Add to dashboard Cite

show abstract

On the diffusion of NV defects in diamond

Pinto

Jones

Palmer

et al. 2012

Physica Status Solidi (a)

View full text Add to dashboard Cite

Besides their importance for quantum information processing, NV defects are crucial agents for the diffusion and aggregation of nitrogen in diamond. In the absence of transition metals, it is thought that the first stage of nitrogen aggregation, where close neighbour nitrogen pairs are formed, is mediated by NV defects. Here we use density functional theory to explore the barriers to NV diffusion. We conclude that the barrier is around 5 eV when there is a ready source of vacancies and that this barrier is weakly dependent on pressure.

show abstract

Toward a predictive atomistic model of ion implantation and dopant diffusion in silicon

Caturla

1998

Computational Materials Science

View full text Add to dashboard Cite

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Reply to ‘‘Comment on ‘Atomistic models of vacancy-mediated diffusion in silicon’ ’’ [J. Appl. Phys. 78, 2362 (1995)]

Cited by 17 publications

References 22 publications

Vacancy-mediated dopant diffusion activation enthalpies for germanium

Vacancy-mediated dopant diffusion activation enthalpies for germanium

On the diffusion of NV defects in diamond

Toward a predictive atomistic model of ion implantation and dopant diffusion in silicon

Contact Info

Product

Resources

About