Enhanced dielectric and piezoelectric properties in Na0.5Bi4.5Ti4O15 ceramics with Pr-doping

Chen, Yong; Zhang, Cancan; Lu, Qin; Jiang, Chaobin; Liu, Kanghui; Ma, Chao; Wu, Zhentao; Pan, Ruikun; Cao, Wanqiang; Ye, Cong; Li, Zhang

doi:10.1016/j.ceramint.2018.07.037

Cited by 19 publications

(2 citation statements)

References 36 publications

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“…As a result, few elements such as Sr, Na, Nd, K etc., were doped to BIT. The obtained d 33 data werelisted in Table.3 [62][63][64][65][66][67][68][69][70][71]. It was clear from Table.3 that the d 33 of BIT based samples was observed to be changing from 17 to 650 pC/N.…”

Section: Bismuth Titanate Based Materials (Bitx)mentioning

confidence: 99%

A review on giant piezoelectric coefficient, materials and applications

2019

Biointerface Res Appl Chem

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Section: Bismuth Titanate Based Materials (Bitx)mentioning

confidence: 99%

A review on giant piezoelectric coefficient, materials and applications

2019

Biointerface Res Appl Chem

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“…In this study, Cr 2 O 3 was added to obtain a (Na 0.5 Bi 0.5 ) 0.95 Ca 0.05 Bi 4 Ti 4 O 15 + 0.2% Cr 2 O 3 material, and as expected, an excellent piezoelectric coefficient d 33 of 29 pC/N and a high T C of 655°C were achieved. This newly designed NBT‐based piezoceramic exhibits outstanding performance compared to most NBT‐modified materials as shown in Figure 1 10–34 . The effect of Cr 2 O 3 addition on the structure and dielectric, ferroelectric, and piezoelectric properties of the CNBT ceramics was further explored.…”

Section: Introductionmentioning

confidence: 99%

Enhanced electrical properties of Cr₂O₃ addition NBT‐based high‐temperature piezoelectric ceramics

2022

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Owing to industrial and technological developments, there has been an increasing demand for piezoelectric ceramics that can function at temperatures of 500°C or higher. Na0.5Bi4.5Ti4O15 (NBT) with its high Curie temperature (TC) of 650°C is a typical bismuth layer–structured ferroelectric. However, its relatively low piezoelectric coefficient (d33 ∼ 16 pC/N) hinders its potential application at high temperatures. In this study, compositions of Ca0.05(Na0.5Bi0.5)0.95Bi4Ti4O15 with different additions of Cr2O3 (CNBT–Cr100x) were designed based on previous studies on Ca2+‐doped NBT piezoceramics, and the effects of the addition on the structural and electrical properties were investigated. The d33 value of CNBT–Cr20 was as high as 29 pC/N, almost twice higher than that of pure NBT ceramics. This increase was investigated in depth using X‐ray diffraction refinement and piezoelectric force microscopy in terms of intrinsic and extrinsic contributions. The Ps values of CNBT and CNBT–Cr20 were almost equal. The density of the domain walls of CNBT–Cr20 was significantly higher than that of CNBT, indicating that the increase of d33 of CNBT–Cr20 is mainly due to the increase in the extrinsic contribution. The CNBT–Cr20 ceramic exhibited excellent properties with a high TC of 655°C, a high d33 of 29 pC/N, and a resistivity high than 106 Ω cm at 500°C, demonstrating its potential for applications at high temperatures such as 500°C.

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Charge–Ferroelectric Transition in Ultrathin Na_0.5Bi_4.5Ti₄O₁₅ Flakes Probed via a Dual‐Gated Full van der Waals Transistor

et al. 2020

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control, which enhances the immunity to short channel effects. [1-5] Ferroelectric field-effect transistors (FeFETs) with a 2D channel and ferroelectric insulator take advantage of the large polarization charge density and high dielectric constant have recently attracted great attention in nonvolatile memory and low-power logic applications. [6-12] However, direct deposition of conventional ferroelectric insulators, such as hafnium or zirconium oxide (HfO 2 , ZrO 2) onto the 2D channel is challenging due to the absence of dangling bonds at the 2D semiconductor surface. Meanwhile, the manifest demonstration of ferroelectricity is critical to the thickness and doping of HfO 2 or ZrO 2 film. Transistors with polymer ferroelectric (e.g., poly[(vinylidene fluoride)-co-trifluoroethylene)] [P(VDF-TrFE)]) gated 2D channel have been thoroughly explored due to the facile device preparation. [13-16] However, the low polarizing performance and poor reliability of polymer ferroelectrics compared with inorganic ferroelectrics limit their applications in real device applications. Inorganic CuInP 2 S 6 (CIPS) down to ≈4 nm has recently been demonstrated to be compatible with van der Waals (vdW) heterostructure as room-temperature ferroelectric insulator for 2D FeFETs. [17-19] Nevertheless, its relatively low Curie point of 315 K (T c , phase transition from ferroelectric to paraelectric) hinders high temperature ferroelectric applications. Same issue is also found for some of the organic polymer ferroelectrics. Aurivillius bismuth layer-structured ferroelectric (BLSF) Na 0.5 Bi 4.5 Ti 4 O 15 (NBIT) has received significant attention in virtue of their high Curie temperature of ≈650 °C, high resistivity, low leakage current, low dielectric loss, low aging rate, and excellent thermal stability, which are attractive for hightemperature piezoelectric devices and ferroelectric nonvolatile random-access memory storage devices. [20-25] A high dielectric constant of 140-180 at room temperature has been reported in the NBIT synthesized by solid-state reaction process, and it is stable over an ultrawide temperature range from room temperature to ≈400 °C. [26] However, NBIT prepared by traditional solid-state reaction methods inevitably suffers from these issues, such as significant impurity phase, irregular flake shape, rough surface. [27] The nanoscale NBIT flakes synthesized by wet chemical methods have the problem of severe agglomeration Ferroelectric field-effect transistors (FeFETs) have recently attracted enormous attention owing to their applications in nonvolatile memories and low-power logic electronics. However, the current mainstream thin-film-based ferroelectrics lack good compatibility with the emergent 2D van der Waals (vdW) heterostructures. In this work, the synthesis of thin ferroelectric Na 0.5 Bi 4.5 Ti 4 O 15 (NBIT) flakes by a molten-salt method is reported. With a dry-transferred NBIT flake serving as the top-gate dielectric, dual-gate molybdenum disulfide (MoS 2) FeFETs are fabricated in a full vdW stacking structur...

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Enhanced dielectric and piezoelectric properties in Na0.5Bi4.5Ti4O15 ceramics with Pr-doping

Cited by 19 publications

References 36 publications

A review on giant piezoelectric coefficient, materials and applications

A review on giant piezoelectric coefficient, materials and applications

Enhanced electrical properties of Cr₂O₃ addition NBT‐based high‐temperature piezoelectric ceramics

Charge–Ferroelectric Transition in Ultrathin Na_0.5Bi_4.5Ti₄O₁₅ Flakes Probed via a Dual‐Gated Full van der Waals Transistor

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Enhanced dielectric and piezoelectric properties in Na0.5Bi4.5Ti4O15 ceramics with Pr-doping

Cited by 19 publications

References 36 publications

A review on giant piezoelectric coefficient, materials and applications

A review on giant piezoelectric coefficient, materials and applications

Enhanced electrical properties of Cr2O3 addition NBT‐based high‐temperature piezoelectric ceramics

Charge–Ferroelectric Transition in Ultrathin Na0.5Bi4.5Ti4O15 Flakes Probed via a Dual‐Gated Full van der Waals Transistor

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Enhanced electrical properties of Cr₂O₃ addition NBT‐based high‐temperature piezoelectric ceramics

Charge–Ferroelectric Transition in Ultrathin Na_0.5Bi_4.5Ti₄O₁₅ Flakes Probed via a Dual‐Gated Full van der Waals Transistor