Enhanced critical temperature in epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 thin films on silicon

Sambri, A.; Gariglio, Stefano; Pardo, A. Torres; Triscone, Jean‐Marc; Stéphan, Odile; Reiner, J. W.; Ahn, Charles

doi:10.1063/1.3532110

Cited by 26 publications

(23 citation statements)

References 28 publications

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“…5(a)] leads to the decrease of remnant polarization [Fig. 5(b)] 29 , which is responsible for the pyroelectricity 5,23 . The variation of the polarization with temperature should be larger along the main polarization and the largest tetragonality [Fig.…”

Section: Resultsmentioning

confidence: 99%

“…The variation of the polarization with temperature should be larger along the main polarization and the largest tetragonality [Fig. 5(c)] 12,29 . Even if both the main polarization ( c -axis) and the largest tetragonality lie in-plane here, the OOP pyroelectric response is much larger than the IP pyroelectric response.…”

Section: Resultsmentioning

confidence: 99%

“…Indeed, it has been used for instance to fabricate ferroelectric random access memories (FRAM) 4,24 , piezoelectric actuators 25 , mechanical energy harvesters 6 , pyroelectric nanogenerators for driving wireless sensor networks (WSNs) 26 , and enhanced nanogenerators based on coupled properties 27 . Moreover, thanks to its perovskite structure, PZT can be monolithically integrated on Si by epitaxy, via a SrTiO 3 (STO) buffer layer 13,28,29 . Noticeably, a recent report has shown that epitaxial PZT layers grown on STO/Si templates lead to a gain of two orders of magnitude in pyroelectric energy conversion with respect to their polycrystalline counterparts 30 .…”

Section: Introductionmentioning

confidence: 99%

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Large anisotropy of ferroelectric and pyroelectric properties in heteroepitaxial oxide layers

Moalla¹,

Cueff²,

Penuelas³

et al. 2018

Sci Rep

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Epitaxial PbZr0.52Ti0.48O3 (PZT) layers were integrated on Si(001) with single PZT {001} orientation, mosaïcity below 1° and a majority of a-oriented ferroelectric domains (∼65%). Ferroelectric and pyroelectric properties are determined along both the out-of-plane and in-plane directions through parallel-plate capacitor and coplanar interdigital capacitor along the <100>PZT direction. A large anisotropy in these properties is observed. The in-plane remnant polarization (21.5 µC.cm−2) is almost twice larger than that measured along the out-of-plane direction (13.5 µC.cm−2), in agreement with the domain orientation. Oppositely, the in-plane pyroelectric coefficient (−285 µC.m−2.K−1) is much lower than that measured out-of-plane (−480 µC.m−2.K−1). The pyroelectric anisotropy is explicated in term of degree of structural freedom with temperature. In particular, the low in-plane pyroelectric coefficient is explained by a two-dimensional clamping of the layers on the substrate which induces tensile stress (from thermal expansion), competing with the decreasing tetragonality of a-domains (shortening of the polar c-axis lattice parameter). Temperature-dependent XRD measurements have revealed an increased fraction of a-domains with temperature, attesting the occurrence of a partial two-dimensional clamping. These observed properties are of critical importance for integrated pyroelectric devices.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Large anisotropy of ferroelectric and pyroelectric properties in heteroepitaxial oxide layers

Moalla¹,

Cueff²,

Penuelas³

et al. 2018

Sci Rep

View full text Add to dashboard Cite

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“…72 , 73 Using radio frequency-magnetron sputter deposition for the growth of SrRuO 3 / Pb(Zr 0.2 Ti 0.8 O 3 ) epitaxial heterostructures on SrTiO 3 buffered Si, Sambri et al reported a remanent polarization of about 70 μ C/cm 2 , with no signifi cant leakage current up to 16 V and a d 33 piezoelectric coeffi cient (this value refers to the geometry where the electric fi eld is applied along the ferroelectric polarization and the displacement is measured along this same axis) from the remanent response, measured by a piezoelectric force microscopy of 50 pm/V for a ferroelectric layer of 100 nm. 74 Here, a 45° rotated cube-on-cube epitaxy of PZT on silicon is found, as schematically depicted in Figure 5c . Using XRD (see …”

Section: Srtio 3 /Sro As a Buff Er Layermentioning

confidence: 95%

Epitaxial PZT films for MEMS printing applications

et al. 2012

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Films of piezoelectric and ferroelectric oxides have been widely investigated for various applications, including microelectromechanical systems (MEMS) for printing. Pb(Zr,Ti)O3 is of particular interest due to its excellent piezoelectric properties. Control of the density, crystalline orientation, and compositional uniformity is essential to obtain these properties. In this article, we review recent progress on the fabrication of epitaxial Pb(Zr,Ti)O3films, in which the aforementioned control can be achieved. We discuss the different approaches used for the deposition of the epitaxial piezoelectric layer as well as the achieved degrees of the epitaxy. Furthermore, the integration of these piezoelectric layers in MEMS and the corresponding performance are discussed

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“…The major advance of introducing such layer was to prevent the formation of amorphous silicon oxide on the Si surface in order to boost the growth of STO. Since then, STO/Si(001) has been used as a large-scale pseudo-substrate for the integration and development of functional perovskite oxides on Si [5,[22][23][24][25][26]. Following the same philosophy, Yttria-stabilized zirconia (YSZ) grown by PLD has also been used as an effective buffer layer to develop the technology of oxide films on Si(001) [27].…”

Section: Integration Of Functional Oxides By Physical Methodsmentioning

confidence: 99%

Integration of functional complex oxide nanomaterials on silicon

et al. 2015

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The combination of standard wafer-scale semiconductor processing with the properties of functional oxides opens up to innovative and more efficient devices with high value applications which can be produced at large scale. This review uncovers the main strategies that are successfully used to monolithically integrate functional complex oxide thin films and nanostructures on silicon: the chemical solution deposition approach (CSD) and the advanced physical vapor deposition techniques such as oxide molecular beam epitaxy (MBE). Special emphasis will be placed on complex oxide nanostructures epitaxially grown on silicon using the combination of CSD and MBE. Several examples will be presented, with a particular stress on the control of interfaces and crystallization mechanisms on epitaxial perovskite oxide thin films, nanostructured quartz thin films, and octahedral molecular sieve nanowires. This review enlightens on the potential of complex oxide nanostructures and the combination of both chemical and physical elaboration techniques for novel oxide-based integrated devices.

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Enhanced critical temperature in epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 thin films on silicon

Cited by 26 publications

References 28 publications

Large anisotropy of ferroelectric and pyroelectric properties in heteroepitaxial oxide layers

Large anisotropy of ferroelectric and pyroelectric properties in heteroepitaxial oxide layers

Epitaxial PZT films for MEMS printing applications

Integration of functional complex oxide nanomaterials on silicon

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