Enhanced critical current density at high magnetic fields in MgB2 with Ga/In acetylacetonate processed by spark plasma sintering

Batalu, Dan; Aldica, G.; Burdusel, M.; Grigoroscuta, Mihai Alexandru; Pasuk, Iuliana; Kuncser, Andrei; Ionescu, A.; Badica, P.

doi:10.1016/j.jmrt.2020.01.109

Cited by 4 publications

(1 citation statement)

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“…However, their poor flux pinning and the rapid decrease in critical current density (J c ) at high magnetic fields limit the practical applications of these superconductors. Chemical doping is the most commonly used method to improve the pinning strength in MgB 2 because of its efficiency and convenience [2][3][4]. So far, addition of nanodopants, including carbon containing compounds [5,6], metal particles [7,8], oxides [9,10], etc, in MgB 2 has been * Author to whom any correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%

Homogeneity of SiC distribution in IMD MgB₂ wires

Guan¹,

Wang²,

Ma³

2021

Supercond. Sci. Technol.

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In this work, MgB 2 wires with different SiC doping levels were processed using the internal Mg diffusion method and the evolving MgB 2 reaction layers were thoroughly analyzed with an electron probe micro-analyzer. It was also shown that high performance wire can be obtained by optimizing SiC contents and heat treatment conditions. The SiC dopant is uniformly distributed in the boron matrix at the macroscale. The highest layer J c value of 5 × 10 4 A cm −2 at 4.2 K and 10 T is achieved in the sample with 7 at% SiC doping and sintered at 640 • C for 15 h. This high layer J c is considered to be due to the doping effect as well as uniform dispersion of SiC particles. The SiC distribution homogeneity can be explained by matrix-to-additive particle size ratio.

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