Enhanced coupling factor of surface acoustic wave devices employing ScAlN/diamond layered structure with embedded electrodes

Zhang, Qiaozhen; Han, Tao; Chen, Jing; Wang, Weibiao; Hashimoto, Ken–ya

doi:10.1016/j.diamond.2015.06.001

Cited by 41 publications

(20 citation statements)

References 13 publications

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“…In comparison with layered structure configured with top IDT electrodes, other previous studies have demonstrated the possibility of significant K 2 enhancement of SAW devices based on layered structures by burying the electrodes in the layer of the piezoelectric thin films [1], [6]- [8]. However, the main drawback of such layered structure is that the patterned IDT electrodes harms AlN crystalline growth and causes cracks due to the edge discontinuities of the electrodes [4], [9].…”

Section: Introductionmentioning

confidence: 93%

SAW Characteristics of AlN/SiO₂/3C-SiC Layered Structure With Embedded Electrodes

Zhang

Han

Tang

et al. 2016

IEEE Trans. Ultrason., Ferroelect., Freq. Contr.

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A layered structure of aluminum nitride (AlN)/silicon dioxide (SiO)/cubic silicon carbide with embedded electrodes, which enables the growth of high-quality AlN thin films, is proposed and studied. The phase velocity, coupling factor, and temperature coefficient of frequency (TCF) of surface acoustic waves in the proposed structure have been investigated using the finite-element method. The simulation results show that a high velocity of 5485 m/s and a large effective coupling factor ( K) of 1.45% can be simultaneously obtained for the first mode. The dramatic enhanced K of 10.5% is also obtainable on the proposed structure employing Sc0.4Al0.6N thin film. Besides, the excellent zero TCF is also achieved without deteriorating the coupling factor by adding an amorphous SiO overlay.

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Section: Introductionmentioning

confidence: 93%

SAW Characteristics of AlN/SiO₂/3C-SiC Layered Structure With Embedded Electrodes

Zhang

Han

Tang

et al. 2016

IEEE Trans. Ultrason., Ferroelect., Freq. Contr.

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“…The electrical performance of the fabricated SAW device is comparable to that previously reported for the ScAlN/diamond heterostructures. However, their reflection coefficients in the Rayleigh and Sezawa resonance modes are, to the best of our knowledge, the largest reported in the ScAlN thin‐film SAW technology …”

Section: Resultsmentioning

confidence: 80%

“…The series and ( f s ) and parallel ( f p ) resonance frequencies for the Rayleigh and Sezawa modes are used for computing the effective SAW velocity (Equation )

v_{eff} = λ (f_{normalp} - f_{normals}) / 2

…”

Section: Resultsmentioning

confidence: 99%

Giant Reflection Coefficient on Sc_0.26Al_0.74N Polycrystalline Diamond Surface Acoustic Wave Resonators

Lozano

Chen

Williams

et al. 2019

Physica Status Solidi (a)

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Since the commercialization of surface acoustic wave (SAW) devices, the technology is steadily increasing the device performances without compromising their power handling, size and price. Herein, one‐port SAW resonators are fabricated on scandium aluminum nitride (Sc0.26Al0.74N)/polycrystalline diamond heterostructures. SAW propagation properties are studied using three different piezoelectric thin‐film thicknesses within the heterostructure. The Rayleigh and Sezawa resonance frequencies are above 1.5 and 2.5 GHz, respectively, achieving Sezawa mode reflection coefficients below −50 dB. The polycrystalline diamond substrate is synthesized by microwave plasma chemical vapor deposition (MPCVD) on top of a 500 μm‐thick Si (001) substrate. The Sc0.26Al0.74N thin films are synthesized by reactive sputtering at nominally room temperature. The thin film's composition is analyzed by Rutherford backscattering spectrometry (RBS). The full width at half maximum (FWHM) of the X‐ray diffraction (XRD) ω scans below 3° indicates that the synthesized Sc0.26Al0.74N thin films are highly c‐axis oriented. The electromechanical coupling coefficient, quality factor, and dielectric loss parameters are computed by curve fitting the device electrical measurements to the simulation results of a modified Butterworth Van Dyke (mBVD) model implemented in the advance design system (ADS) tool.

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“…Many factors affect the growth of Sc-doped AlN (ScAlN) [7,8] thin films such as sputtering system, substrate, sputtering power, and flow ratio of nitrogen to argon. This Letter describes the preparation and characterisation of Sc 17.5% Al 82.5% N films.…”

mentioning

confidence: 99%

Piezoelectric performance improvement of ScAlN film and two‐port SAW resonator application

et al. 2019

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Highly c-axis-oriented scandium-doped aluminium nitride films (ScAlN) were prepared on platinum substrates by DC magnetron sputtering. The effect of sputtering power on the crystal quality and piezoelectric properties of ScAlN thin film was investigated. The test results show that the piezoelectric properties of the ScAlN film first strengthen and then weaken with the increase of sputtering power, and the optimal piezoelectric properties are obtained under the condition of 180 W. Furthermore, a surface acoustic wave (SAW) resonator with an interdigital transducer width of 500 nm was fabricated by electron beam lithography. The SAW device exhibits a resonant frequency of 1.887 GHz and a quality factor (Q) of 170.8.

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Enhanced coupling factor of surface acoustic wave devices employing ScAlN/diamond layered structure with embedded electrodes

Cited by 41 publications

References 13 publications

SAW Characteristics of AlN/SiO₂/3C-SiC Layered Structure With Embedded Electrodes

SAW Characteristics of AlN/SiO₂/3C-SiC Layered Structure With Embedded Electrodes

Giant Reflection Coefficient on Sc_0.26Al_0.74N Polycrystalline Diamond Surface Acoustic Wave Resonators

Piezoelectric performance improvement of ScAlN film and two‐port SAW resonator application

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Enhanced coupling factor of surface acoustic wave devices employing ScAlN/diamond layered structure with embedded electrodes

Cited by 41 publications

References 13 publications

SAW Characteristics of AlN/SiO2/3C-SiC Layered Structure With Embedded Electrodes

SAW Characteristics of AlN/SiO2/3C-SiC Layered Structure With Embedded Electrodes

Giant Reflection Coefficient on Sc0.26Al0.74N Polycrystalline Diamond Surface Acoustic Wave Resonators

Piezoelectric performance improvement of ScAlN film and two‐port SAW resonator application

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SAW Characteristics of AlN/SiO₂/3C-SiC Layered Structure With Embedded Electrodes

SAW Characteristics of AlN/SiO₂/3C-SiC Layered Structure With Embedded Electrodes

Giant Reflection Coefficient on Sc_0.26Al_0.74N Polycrystalline Diamond Surface Acoustic Wave Resonators