2019
DOI: 10.1002/cnma.201900101
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Enhanced Charge Transport via Metallic 1T Phase Transition Metal Dichalcogenides‐Mediated Hole Transport Layer Engineering for Perovskite Solar Cells

Abstract: In perovskite photovoltaic cells having a p‐i‐n structure, the hole transport layer (HTL) plays an important role in device performance because it has a direct impact on the crystallinity of overlying perovskite films as well as the interfacial charge transport. Poly(3,4‐ethylenedioxythiophene):polystyrene sulfonate (PEDOT : PSS) has been widely used as an HTL owing to its desirable electrical and optical properties with solution processability. However, improving the functionality of PEDOT : PSS still require… Show more

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Cited by 18 publications
(20 citation statements)
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“…26 Few-layer akes of SnS 2 were used as ETL material in planar PSC structures, exhibiting PCE values up to 20.1%, 27 while WSe 2 interlayer over PEDOT:PSS was reported to increase the PCE from 13.8% to 16.2%. 28 Finally, inverted PSCs were fabricated through the employment of MoSe 2 as HTL 29,30 or as buffer layer. 31 Differently from the most investigated TMDs, group-V TMDs (e.g., TaS 2 , NbS 2 and VS 2 ) can be found in metal-like phases 32,33 such as 2H-, 3R-and 6R polytypes for Nb-or Ta-based TMDs, 34,35 and 1T-polytypes for V-based TMDs.…”
Section: Introductionmentioning
confidence: 99%
“…26 Few-layer akes of SnS 2 were used as ETL material in planar PSC structures, exhibiting PCE values up to 20.1%, 27 while WSe 2 interlayer over PEDOT:PSS was reported to increase the PCE from 13.8% to 16.2%. 28 Finally, inverted PSCs were fabricated through the employment of MoSe 2 as HTL 29,30 or as buffer layer. 31 Differently from the most investigated TMDs, group-V TMDs (e.g., TaS 2 , NbS 2 and VS 2 ) can be found in metal-like phases 32,33 such as 2H-, 3R-and 6R polytypes for Nb-or Ta-based TMDs, 34,35 and 1T-polytypes for V-based TMDs.…”
Section: Introductionmentioning
confidence: 99%
“…32,[37][38][39][40] For instance, owing to the remarkable features of TMDCs in PV devices, Choi et al utilized tungsten diselenide (WSe 2 ) as hole transport layer to boost the performance of perovskite SCs. 41 The resulted device showed a PCE of 16.3%, which provided a new route to enhance the device functionality in PV technology. By applying mechanical stress 42 and alloy formation such as Mo 1−x W x S 2 43,44 the band gap, electron affinity, and ionization potential of TMDCs can be tailored.…”
Section: Introductionmentioning
confidence: 94%
“…Moreover, the direct band gap, excellent harvesting of light, and high mobility make TMDCs a promising material for highly efficient PV devices . For instance, owing to the remarkable features of TMDCs in PV devices, Choi et al utilized tungsten diselenide (WSe 2 ) as hole transport layer to boost the performance of perovskite SCs . The resulted device showed a PCE of 16.3%, which provided a new route to enhance the device functionality in PV technology.…”
Section: Introductionmentioning
confidence: 99%
“…[34,37,38] An alternative strategy consists of mixing PEDOT:PSS with TMDs. This approach has been successfully applied to solar cells, leading to higher performance, [39,40,41,42 ] and to other kind of devices. [43] Nonetheless, only few works implement this scheme on LEDs, but the low concentration of exfoliated MoS2 used (~ 0.5 mg mL -1 ) did not allow to have a fair comparison with the reference device and/or UV-ozone irradiation treatment was still needed.…”
Section: Introductionmentioning
confidence: 99%