The surface passivation effect of SF6 plasma on ZnO films for application in polymer solar cells is demonstrated.

Superhydrophobicity on transparent fluorinated ethylene propylene films with nano-protrusion morphology by Ar+ O2 plasma etching: Study of the degradation in hydrophobicity after exposure to the environment Photoresist modifications by plasma vacuum ultraviolet radiation: The role of polymer structure and plasma chemistry J. Vac. Sci. Technol. B 28, 993 (2010); 10.1116/1.3484249Ion beam deposition of tantalum pentoxide thin film at room temperature In this work we study the utilization of molecular transition metal oxides known as polyoxometalates (POMs), in particular the Keggin structure anions of the formula PW 12 O 40 3À , as active nodes for potential switching and/or fast writing memory applications. The active molecules are being integrated in hybrid Metal-Insulator/POM molecules-Semiconductor capacitors, which serve as prototypes allowing investigation of critical performance characteristics towards the design of more sophisticated devices. The charging ability as well as the electronic structure of the molecular layer is probed by means of electrical characterization, namely, capacitance-voltage and current-voltage measurements, as well as transient capacitance measurements, C (t), under step voltage polarization. It is argued that the transient current peaks observed are manifestations of dynamic carrier exchange between the gate electrode and specific molecular levels, while the transient C (t) curves under conditions of molecular charging can supply information for the rate of change of the charge that is being trapped and de-trapped within the molecular layer. Structural characterization via surface and cross sectional scanning electron microscopy as well as atomic force microscopy, spectroscopic ellipsometry, UV and Fourier-transform IR spectroscopies, UPS, and XPS contribute to the extraction of accurate electronic structure characteristics and open the path for the design of new devices with on-demand tuning of their interfacial properties via the controlled preparation of the POM layer. V C 2014 AIP Publishing LLC.

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We present a solvothermal synthetic route to produce monodispersed CuO nanoparticles (NPs) in the range of 5-10 nm that can be used as hole selective interfacial layer between indium tin oxide (ITO) and perovskite active layer for p-i-n perovskite solar cells by a spin casting the dispersions at room temperature. The bottom electrode interface modification provided by spherical CuO-NPs at room temperature promotes the formation of high quality perovskite photoactive layers with large crystal size and strong optical absorption. Furthermore, it is shown that the nanoparticulate nature of the CuO hole transporting interfacial layer can be used to improve light manipulation within perovskite solar cell device structure. The corresponding p-i-n CH3NH3PbI3-based solar cells show high Voc values of 1.09 V, which is significantly higher compared to the Voc values obtained with conventional PEDOT:PSS hole selective contact based perovskite solar cells.

Modifications of the ZnO electron extraction layer with low-pressure H plasma treatment increased the efficiency of inverted polymer solar cells (PSCs) based on four different photoactive blends, namely, poly(3-hexylthiophene):[6,6]-phenyl C71 butyric acid methyl ester (P3HT:PC71BM), P3HT:1',1″,4',4″-tetrahydro-di[1,4]methanonaphthaleno-[5,6]ullerene-C60 (P3HT:IC60BA), poly[(9-(1-octylnonyl)-9H-carbazole-2,7-diyl)-2,5-thiophenediyl-2,1,3-benzothiadiazole-4,7-diyl-2,5-thiophenediyl]:PC71BM (PCDTBT:PC71BM), and (poly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl][3-fluoro-2-(2-ethylhexy)carbonyl]thieno[3,4-b]thiophenediyl]]):PC71BM (PTB7:PC71BM), irrespective of the donor:acceptor combination in the photoactive blend. The drastic improvement in device efficiency is dominantly attributable to the reduction in the work function of ZnO followed by a decreased energy barrier for electron extraction from fullerene acceptor. In addition, reduced recombination losses and improved nanomorphology of the photoactive blend in the devices with the H plasma treated ZnO layer were observed, whereas exciton dissociation also improved with hydrogen treatment. As a result, the inverted PSC consisting of the P3HT:PC71BM blend exhibited a high power conversion efficiency (PCE) of 4.4%, the one consisting of the P3HT:IC60BA blend exhibited a PCE of 6.6%, and our champion devices with the PCDTBT:PC71BM and PTB7:PC71BM blends reached high PCEs of 7.4 and 8.0%, respectively.

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An engineering approach is implemented for the performance and stability enhancement of perovskite solar cells, through the incorporation of bismuth telluride flakes in the electron transport layer (ETL) and as an interlayer on top of the ETL.