Enhanced carrier mobility of multilayer MoS2 thin-film transistors by Al2O3 encapsulation

Kim, Seong Yeoul; Park, Seonyoung; Choi, Woong

doi:10.1063/1.4964606

Cited by 51 publications

(37 citation statements)

References 21 publications

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“…Finally, a layer of 6 nm Al 2 O 3 was deposited on top of the completed devices. This thin layer of Al 2 O 3 was found to be of great significance for device performance enhancement [41] and our results were consistent with previous work in Figure S9 (Supporting Information).…”

Section: Sulfurization Of Moo 3 Filmssupporting

confidence: 93%

Top‐Down Integration of Molybdenum Disulfide Transistors with Wafer‐Scale Uniformity and Layer Controllability

Shi

Chen

Zhang

et al. 2017

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in logic circuits and CMOS applications. In particular, mono layer MoS 2 has a direct band gap of 1.9 eV, which makes it promising for optoelectronics applications such as photode tector or light emission diode (LED). [2] To date, most experimental research focus on the 2D sem iconductors mechanically exfoliated from bulk material, sim ilar to the approach for graphene studies. This is because the mechanical exfoliation (mostly "scotch tape" method) not only enables a high quality single crystal 2D semiconductor sample with least defects, but also limits the fabrication steps in which the ultrathin 2D sample can be damaged or con taminated. High performance field effect transistors (FETs) based on exfoliated TMDCs have been fabricated and found to exhibit large On/Off current ratio (over 10 7 ), high elec tron mobility (exceeding 200 cm 2 V −1 s −1 ) and small cutoff current (less than 1 pA). [8,9]

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Section: Sulfurization Of Moo 3 Filmssupporting

confidence: 93%

Top‐Down Integration of Molybdenum Disulfide Transistors with Wafer‐Scale Uniformity and Layer Controllability

Shi

Chen

Zhang

et al. 2017

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“…Radisavljevic 等 [14] 采用原子沉积技术制备了 30 nm 厚的高介电常数 [61] ]以及 2 nm 厚的应变硅[电子迁移率为 250 cm 2 /(V•s) [62] ], 同时电流开关比高达 10 8 . 除了 HfO 2 外, 利用 Al 2 O 3 代替 SiO 2 作为介质绝缘层 [63] , 或者利用水溶性聚乙烯醇 (PVA)作为封盖层 [64] , 都可以提升 MoS 2 晶体管的电子迁移率.…”

Section: 过渡金属硫族化合物的应用研究unclassified

Research Progress on Preparation and Application of Two-Dimensional Transition Metal Dichalcogenides Nanomaterials

Lin¹,

Wang²

2017

Acta Chim. Sinica

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Two-dimensional (2D) materials have received great attentions in recent years, including BN, transition metal dichalcogenides, transition metal oxides and black phosphorus. Among them, graphene-like transition metal dichalcogenides (TMDCs), such as MoS 2 , WS 2 , MoSe 2 , TiS 2 , are emerging as key materials in electronics and chemical industry because of their excellent physical and chemical properties. Because of the quantum confinement and surface effects, the 2D nanomaterials exhibit completely different properties from their bulk, leading to a new field in material science and technology. The ability to prepare high quality and large scale TMDCs is the foundation for their practical applications. Until now, many methods have been employed to prepare various morphologies of TMDCs, including mechanical cleavage, intercalation-exfoliation, ultrasonic-assisted liquid-phase exfoliation, chemical vapor deposition and hydrothermal synthesis. In this paper, the authors introduce the crystal structures and electronic properties of TMDCs briefly. The dimension from bulk to single or few layers leads to changes of these nanomaterials, showing novel properties in electronic transfer rate, catalytic activity, etc. Then the top-down and bottom-up preparation methods are summarized, and the advantages and disadvantages of these methods are discussed. At present, the challenge is that there are no proper ways to prepare TMDCs in large scale with controlled thickness and general application. As every single material has its performance limitation, the hotpot in preparation lies in the hybridization with other materials to create functional composites, aiming to improve their electronic and optical properties for special devices, and the most commonly used components are graphene and other 2D materials. And the authors also introduce the research progress in applications systematically, with emphasis on electronic devices, optoelectronic devices, sensing platforms, energy storage devices and catalyst, showing a wide range of applications. In addition, the authors also give some perspectives on the challenges and prospects in this field.

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“…Moreover, high-κ dielectrics deposited via atomic layer deposition (ALD) are also advantageous in industrial application compared with other passivation layer candidates such as a polymer. In this study, we sought to improve not only the electrical performance by suppressing the charged impurity scattering but also the stability by protecting the MoS 2 channel from O 2 or H 2 O by adopting Al 2 O 3 as the passivation layer [29][30][31][32]. After depositing Al 2 O 3 as the passivation layer on the asfabricated MoS 2 TFTs, the results confirm that stability in terms of the threshold voltage shift improves under the positive bias stress of 30 V at 60°C.…”

Section: Introductionmentioning

confidence: 99%

Passivation layer effect on the positive bias temperature instability of molybdenum disulfide thin film transistors

Wang

Choi

2020

Journal of Information Display

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As two-dimensional (2D) materials have a large surface to volume ratio, the stability of thin film transistors (TFTs) is likely to be lowered with air exposure. Therefore, we study the positive bias temperature instability (PBTI) of chemical vapor deposition (CVD) grown molybdenum disulfide (MoS 2 ) TFTs before and after deposition of a passivation layer. The results of the PBTI study demonstrate that the fabricated devices adjust to the stretched-exponential model, which shows a threshold voltage shift attributed to the charge trapping mechanism. However, by depositing the passivation layer (Al 2 O 3 ) that physically blocks the charge transfer process with O 2 and H 2 O adsorbed to the surface of the MoS 2 channel, the threshold voltage shifted reduces from 10 V to 7.4 V under stress condition. The quantitative value of tau (τ ), one of the fitting parameters of the stretched-exponential model, also decreases from 6453 s to 5153 s, resulting in improved device stability.

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Enhanced carrier mobility of multilayer MoS2 thin-film transistors by Al2O3 encapsulation

Cited by 51 publications

References 21 publications

Top‐Down Integration of Molybdenum Disulfide Transistors with Wafer‐Scale Uniformity and Layer Controllability

Top‐Down Integration of Molybdenum Disulfide Transistors with Wafer‐Scale Uniformity and Layer Controllability

Research Progress on Preparation and Application of Two-Dimensional Transition Metal Dichalcogenides Nanomaterials

Passivation layer effect on the positive bias temperature instability of molybdenum disulfide thin film transistors

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