2022
DOI: 10.1016/j.ceramint.2022.06.215
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Enhanced bending strength and microwave dielectric properties of Li2MgTi3O8 ceramics by adding Si3N4 reinforcing phase

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Cited by 7 publications
(3 citation statements)
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“…With the increase of (Ni 1/3 Nb 2/3 ) 4+ substitution (0.03 ≤ x ≤ 0.15), the bulk densities at all temperatures reach the maximum value at x = 0.09 (4.748 g/cm 3 ∼ 1190 °C, 4.992 g/cm 3 ∼ 1250 °C, and 4.952 g/cm 3 ∼ 1310 °C). Calculations based on eqs S1 and S2 , show that the relative densities also reach their highest values at x = 0.09 (90.9% ∼ 1190 °C, 95.6% ∼ 1250 °C, and 94.8% ∼ 1310 °C). These phenomena indicate that the internal structure of the BTN ∼ NN ceramics is densest at x = 0.09 (4.992 g/cm 3 , 94.88% ∼ 1250 °C).…”
Section: Resultsmentioning
confidence: 99%
“…With the increase of (Ni 1/3 Nb 2/3 ) 4+ substitution (0.03 ≤ x ≤ 0.15), the bulk densities at all temperatures reach the maximum value at x = 0.09 (4.748 g/cm 3 ∼ 1190 °C, 4.992 g/cm 3 ∼ 1250 °C, and 4.952 g/cm 3 ∼ 1310 °C). Calculations based on eqs S1 and S2 , show that the relative densities also reach their highest values at x = 0.09 (90.9% ∼ 1190 °C, 95.6% ∼ 1250 °C, and 94.8% ∼ 1310 °C). These phenomena indicate that the internal structure of the BTN ∼ NN ceramics is densest at x = 0.09 (4.992 g/cm 3 , 94.88% ∼ 1250 °C).…”
Section: Resultsmentioning
confidence: 99%
“…1–3 In a previous study, LMT ceramics exhibited relatively excellent microwave dielectric properties when sintered at 1050 °C: ε r = 24.58, Q × f = 60 065 GHz, and τ f = −6.65 ppm °C −1 . 4 However, their high sintering temperature and poor flexural strength (99.534 MPa) make them impossible to be used in LTCC ceramic substrate devices. 5,6…”
Section: Introductionmentioning
confidence: 99%
“…[1][2][3] In a previous study, LMT ceramics exhibited relatively excellent microwave dielectric properties when sintered at 1050 1C: e r = 24.58, Q Â f = 60 065 GHz, and t f = À6.65 ppm 1C À1 . 4 However, their high sintering temperature and poor flexural strength (99.534 MPa) make them impossible to be used in LTCC ceramic substrate devices. 5,6 Most researchers have found that TiN has a high melting point (approximately 3200 K), excessive hardness (approximately 21 GPa) and good chemical stability, which can help improve the mechanical properties of ceramics.…”
Section: Introductionmentioning
confidence: 99%