Enhanced absorption and quantum efficiency in locally modified single-crystal Si

Kuznicki, Z.T.

doi:10.1063/1.1528730

Cited by 23 publications

(22 citation statements)

References 14 publications

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“…To create an appropriate band bending for the effective minority carrier collection and the interface recombination control, a highly doped AL was utilized [12]. The barrier structure of a modified emitter was treated as the -Si-+ -Si--Si or -Si-+ --Si--Si heterojunction, blocking the flow of minority carriers generated between the front surface of the emitter and the upper interface of AL [11,12]. The insertion of a similar structure in the space charge region is believed to be preferable, because a better control of recombination can be achieved, if the built-in potential of the -junction drops on the layer volume (that means that the electric field in AL is about 10 6 V/cm).…”

Section: Related Experimental Results and Future Developmentmentioning

confidence: 99%

Amorphous Submicron Layer in Depletion Region: New Approach to Increase the Silicon Solar Cell Efficiency

Kozinetz¹,

Skryshevsky²

2018

Ukr. J. Phys.

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The insertion of a thin amorphized layer (AL) in the space charge region of a silicon solar cell is proposed as a way to improve the conversion efficiency due to the impurity photovoltaic effect. Previously, this approach had been applied to a cell with a layer inserted in the emitter by the ion implantation. The insertion of such layer in the space charge region is founded to be preferable, because a better control over the recombination (via energy levels in the band gap and local states of interfaces) can be achieved. The parameters of a modified device are investigated by the numerical simulation, and it is concluded that the layer parameters have a crucial influence on the cell conversion efficiency. Based on our simulation results, the optimal AL and the height of barriers are determined. In such a case, the short circuit current density is improved due to the absorption of photons with energy less than a silicon band gap of 1.12 eV in AL, whereas the open circuit voltage and fill factor remain unchanged. Theoretically, the increase in the efficiency by 1-2% is achievable. In the non-optimal case, the degradation of a short circuit current and the fill factor eliminate the positive effect of an additional photogeneration in AL.K e y w o r d s: amorphized layer, space charge region, + -silicon solar cell.

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Section: Related Experimental Results and Future Developmentmentioning

confidence: 99%

Amorphous Submicron Layer in Depletion Region: New Approach to Increase the Silicon Solar Cell Efficiency

Kozinetz¹,

Skryshevsky²

2018

Ukr. J. Phys.

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“…After layer growth, their concentration increased drastically. Does this indicate a new generation mechanism [11] visualized by optical and optoelectronic characterizations?…”

Section: Analysis: Free-carrier Absorptionmentioning

confidence: 97%

“…This layered nanosystem buried within the emitter is at the origin of a spatial carrier collection limit (CCL) [11], which permits a clear separation of optical and electronic effects. This means that a free carrier surface reservoir (delimited by the Si surface and a buried crystalline/amorphous (c-Si/a-Si) interface), activated under illumination, represents a dead zone (d z ) for carrier collection.…”

Section: Test Devicementioning

confidence: 99%

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Non-linear optical functions of crystalline-Si resulting from nanoscale layered systems

Kuznicki

Ley

Lezec

et al. 2006

Materials Science and Engineering: C

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“…The ns-Si-ls was formed by ion-beam implantation and adequate thermal treatment [12]. It contains a free-carrier surface reservoir, which is delimited by the Si surface and a buried c-Si/a-Si interface (determined by a valence band offset) [13].…”

Section: Optical Features Of the Nanoscale Si-layered Systemmentioning

confidence: 99%

Solar light induced opacity of MIND cells

Kuznicki¹,

Meyrueis²

2006

SPIE Proceedings

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Multi-interface novel devices (MIND) exhibit a dramatically low UV-and blue-spectrum photovoltaic (PV) performance. A paradox could even be observed, the better the electronic passivation the poorer the PV performance. The paradox appears under relatively low excitations in comparison with intense laser fluxes usually at its origin. The effect can be explained by solar light induced opacity, which reduces considerably or even totally the photon penetration into deeper layers, from which exclusively the photocarrier collection is possible. This opacity results from a feedback occasioned by the free-carrier absorption: better surface passivation, higher free-carrier density, stronger surface dead zone absorptance. The total energy of the incident short wavelength beam can be absorbed before a carrier collection limit buried in the emitter. This limit acts simultaneously on the electronic performance, blocking free-carriers, and on the optical performance, being at the origin of an enhancement of the surface absorptance. As a consequence, a thin surface zone dominates the optical functions of MIND cells through the free-carrier gas confined inside it. In this work we report specific effects concerning the solar-light induced opacity in MIND cells. The investigation allows modification of the free-carrier confinement using different device architectures. The main characterization methods were reflectivity and spectral response with a varying incident beam. The results prove the domination of the free-carrier optical functions on the MIND PV conversion.

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Enhanced absorption and quantum efficiency in locally modified single-crystal Si

Cited by 23 publications

References 14 publications

Amorphous Submicron Layer in Depletion Region: New Approach to Increase the Silicon Solar Cell Efficiency

Amorphous Submicron Layer in Depletion Region: New Approach to Increase the Silicon Solar Cell Efficiency

Non-linear optical functions of crystalline-Si resulting from nanoscale layered systems

Solar light induced opacity of MIND cells

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