Enhanced 154 μm emission in Y-Er disilicate thin films on silicon photonic crystal cavities

Savio, R. Lo; Miritello, M.; Shakoor, Abdul; Cardile, Paolo; Welna, Karl; Andreani, Lucio Claudio; Gerace, Dario; Krauss, Thomas F.; О’Faolain, L.; Priolo, F.; Galli, Mattéo

doi:10.1364/oe.21.010278

Cited by 21 publications

(6 citation statements)

References 40 publications

(24 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Erbium ions have been investigated as one of the promising light emitters in Si. PhC nanocavities have been also applied to enhance the light emission from Er ions (Wang et al, 2012;Savio et al, 2013). Narrowing the cavity linewidth in Er-doped silicon nitride PhC nanocavities has been also demonstrated under optical pumping condition (Gong et al, 2010).…”

Section: Application Of Photonic Crystal Structures To Other Emitters...mentioning

confidence: 99%

Group IV Light Sources to Enable the Convergence of Photonics and Electronics

et al. 2014

View full text Add to dashboard Cite

Group IV lasers are expected to revolutionize chip-to-chip optical communications in terms of cost, scalability, yield, and compatibility to the existing infrastructure of silicon industries for mass production. Here, we review the current state-of-the-art developments of silicon and germanium light sources toward monolithic integration. Quantum confinement of electrons and holes in nanostructures has been the primary route for light emission from silicon, and we can use advanced silicon technologies using top-down patterning processes to fabricate these nanostructures, including fin-type vertical multiple-quantum-wells. Moreover, the electromagnetic environment can also be manipulated in a photonic crystal nanocavity to enhance the efficiency of light extraction and emission by the Purcell effect. Germanium is also widely investigated as an active material in Group IV photonics, and novel epitaxial growth technologies are being developed to make a high quality germanium layer on a silicon substrate. To develop a practical germanium laser, various technologies are employed for tensile-stress engineering and high electron doping to compensate the indirect valleys in the conduction band. These challenges are aiming to contribute toward the convergence of electronics and photonics on a silicon chip.

show abstract

Section: Application Of Photonic Crystal Structures To Other Emitters...mentioning

confidence: 99%

Group IV Light Sources to Enable the Convergence of Photonics and Electronics

et al. 2014

View full text Add to dashboard Cite

show abstract

“…Recently, it was shown that formation of rare-earth silicates (e.g. Er 2 SiO 5 , Eu 2 SiO 5 , Ce 2 Si 2 O 7 ) could enhance their photoluminescence efficiency161718. It was found that in these silicates, the rare-earth ions are 100% activated, and the solubility can reach 10 22 cm −3 192021.…”

mentioning

confidence: 99%

A novel violet/blue light-emitting device based on Ce2Si2O7

Wang

et al. 2015

Sci Rep

View full text Add to dashboard Cite

Rare-earth silicates are highly efficient materials for silicon-based light sources. Here we report a novel light-emitting device based on Ce2Si2O7. Intense violet/blue electroluminescence was observed, with a turn-on voltage of about 13 V. The violet/blue emission is attributed to 4f–5d transitions of the Ce3+ ions in Ce2Si2O7, which are formed by interfacial reaction of CeO2 and Si. Electroluminescence and photoluminescence mechanisms of the Ce2Si2O7 light-emitting device are also discussed.

show abstract

“…The fluorescence intensity of the nano‐engineered SPYAS fiber is found to be a very strong due to the presence of Y and Sc rich crystalline NPs, where Sc enhances the crystal field strength in Er ions sites as the ionic radius of Sc is smaller than that of Er ions . Another reason may be the reduced up‐conversion phenomena as Y cations substitute Er ions due to similarity of ionic radii of Er and Y ions …”

Section: Resultsmentioning

confidence: 99%

Luminescent Properties and Optical Amplification of Erbium‐Doped Nano‐Engineered Scandium‐Phospho‐Yttria‐Alumina‐Silica Glass Based Optical Fiber

Reddy

Das

Dutta

et al. 2018

Physica Status Solidi (a)

View full text Add to dashboard Cite

In this work, a new erbium (Er) doped nano‐engineered scandium‐phospho‐yttria‐alumina‐silica (SPYAS) glass‐based optical fiber is reported, fabricated through the MCVD process, and solution doping technique, followed by a suitable thermal annealing of pristine preform. The fabrication process comprises the incorporation of erbium doped phase‐separated scandium‐yttria rich crystalline nanoparticles into the core region through in situ process based on phase‐separation and crystal growth phenomena. The material characterization results, obtained from transmission electron microscopy, electron diffraction pattern, energy dispersive X‐ray, electron probe micro analysis, and X‐ray fluorescence, confirm the formation of Er2O3 doped crystalline phase‐separated scandium‐yttria rich nanoparticles in the core region. The formation of scandium‐ultra rich nano‐crystalline environment, possessing low photon energy around the erbium ions, enhanced the fluorescence intensity. Such kind of nano‐engineered glass reduces the noise figure around 4.35 dB, and provides broadband optical flat gain with an average value of 38.675 dB, varied by less than ±0. 7 dB spanning over a broad wavelength region of 1530–1590 nm compared to the pristine and Sc free Er‐doped fibers. Such kind of nano‐engineered glass based Er doped fiber will be useful for making highly efficient optical amplifiers, suitable for present broadband optical communication systems.

show abstract

Enhanced 154 μm emission in Y-Er disilicate thin films on silicon photonic crystal cavities

Cited by 21 publications

References 40 publications

Group IV Light Sources to Enable the Convergence of Photonics and Electronics

Group IV Light Sources to Enable the Convergence of Photonics and Electronics

A novel violet/blue light-emitting device based on Ce2Si2O7

Luminescent Properties and Optical Amplification of Erbium‐Doped Nano‐Engineered Scandium‐Phospho‐Yttria‐Alumina‐Silica Glass Based Optical Fiber

Contact Info

Product

Resources

About