Engineering the Growth of MoS<sub>2</sub> via Atomic Layer Deposition of Molybdenum Oxide Film Precursor

Martella, Christian; Melloni, Pierpaolo; Cinquanta, Eugenio; Cianci, E.; Alia, Mario; Longo, M.; Lamperti, Alessio; Vangelista, Silvia; Fanciulli, M.; Molle, Alessandro

doi:10.1002/aelm.201600330

Cited by 45 publications

(50 citation statements)

References 16 publications

(54 reference statements)

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“…First, the as‐grown MoS 2 film was investigated by atomic force microscopy (AFM) (Figure a). It was found that the film is relatively smooth with an RMS value ≈ 0.5 nm, which is consistent with the previously reported data of 0.4, 0.8, and 0.2 nm . As shown in Figure a, the film revealed the sharp edge grain‐like structure with grain lateral sizes up to ≈ 200 nm.…”

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confidence: 90%

“…The subsequent MoO 3 sulfurization process was carried out in a three‐zone tube furnace, HZS‐1200 (Carbolite Gero), equipped with a 32 mm outer diameter quartz tube. After loading the substrates, the tube was purged for 1 h to obtain Ar (99.9999%) atmosphere (150 sccm flow) at room temperature similar to the procedure described in previous studies . The sulfurization process was performed at 900 °C with elemental sulfur located upstream from the sample in a tube.…”

Section: Methodsmentioning

confidence: 99%

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Band Alignment in As‐Transferred and Annealed Graphene/MoS₂ Heterostructures

Романов

Slavich

Kozodaev

et al. 2019

Physica Rapid Research Ltrs

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The band alignment in the graphene/MoS2 van der Waals heterostructures (vdWHs) is investigated by Raman spectroscopy and X‐ray photoelectron spectroscopy (XPS) to understand the transfer‐ and annealing‐induced change of electronic properties. Raman spectroscopy indicates that partial electron redistribution between the MoS2 and graphene layers occurs when brought into contact, resulting in a hole concentration decrease in graphene from 1 × 1013 to 7 × 1012 cm−2. The additional thermal annealing at 400 °C further decreases the hole concentration down to 3 × 1012 cm−2 and leads to a MoS2 valence band offset increase by 0.2 eV. The annealing procedure also results in a visible decrease in adsorbed carbon‐ and oxygen‐containing contaminants, and this decrease is clearly detected by XPS. Thus, the combination of Raman spectroscopy and XPS provides a powerful diagnostic tool for the electronic properties at each stage of vdWHs preparation, allowing the attainment of 2D vdWHs with the desired properties.

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supporting

confidence: 90%

Section: Methodsmentioning

confidence: 99%

Band Alignment in As‐Transferred and Annealed Graphene/MoS₂ Heterostructures

Романов

Slavich

Kozodaev

et al. 2019

Physica Rapid Research Ltrs

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“…Therefore, it is necessary to develop methods to engineer the structural, excitonic, and electronic properties of 2D ML chalcogenide without compromising continuity and homogeneity. The present report details a two‐step growth process that is based on a sulfurization process of molybdenum (Mo)‐containing (Mo metal, oxides, or compounds) precursor films at an elevated temperature.…”

Section: Introductionmentioning

confidence: 99%

High‐Performance Monolayer MoS₂ Films at the Wafer Scale by Two‐Step Growth

Das

et al. 2019

Adv Funct Materials

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To realize multifunctional devices at the wafer scale, the growth process of monolayer (ML) 2D semiconductors must meet two key requirements: 1) growth of continuous and homogeneous ML film at the wafer scale and 2) controllable tuning of the properties of the ML film. However, there is still no growth method available that fulfills both of these criteria. Here, the first report is presented on the preparation of continuous and uniform ML MoS 2 films through a two-step process at the wafer scale. Unlike in previous ML MoS 2 film growth processes, the ML MoS 2 film can be uniformly modulated across the wafer in terms of material structure and composition, exciton state, and electronic transport performance. A significant result is that the high-quality wafer-scale ML MoS 2 films realize superior electronic performance compared to reported two-step-grown films, and it even matches or exceeds reported ML MoS 2 films prepared by other processes. The transistor performance of the optimized ML film achieves a field effect mobility of 10 to 30 cm 2 V −1 s −1 , an on/off current ratio of about 10 7 , and hysteresis as low as 0.4 V.

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“…These methods can improve the uniformity of the process and resulted in successful large‐scale synthesis (Figure c). Atomic‐layer deposition (ALD) techniques have recently been used to deposit uniform MoO 3 film, which was converted into centimeter‐scale uniform MoS 2 films by reacting with sulfur in a later process . Usually the controllability in terms of layer numbers is not great, and the grain size is very small (tens of nanometers) in the as‐synthesized films, which limits the use of such 2D films for high‐performance electronic applications due to the existence of a large number of grain boundaries.…”

Section: Preparation Of 2d Semiconductorsmentioning

confidence: 99%

Two‐Dimensional Semiconductors: From Materials Preparation to Electronic Applications

Liu

Abbas

Zhou

2017

Adv Elect Materials

104

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Two-dimensional (2D) materials are layered materials featuring strong inplane covalent bonding and weak intra-plane bonding, which allow them to be easily cleaved into atomically thin materials, and be stable in such thin forms. Initiated by graphene, there has been increasing research interest in the past few years in studying growth, electronic and optoelectronic applications, and many other applications of 2D materials. In this review, recent achievements in the controlled preparation of monolayer and few-layer 2D semiconductors are summarized, with an emphasis on transition metal dichalcogenides (TMDCs). General understanding for TMDC growth as well as approaches to grow large single crystalline TMDCs and wafer-scale manufacturing of continuous TMDC films are discussed. In the second part, the focus is on applications of 2D semiconductors in electronics, where several key issues-including how to form good electrical contacts between electrodes and 2D semiconductors, charge carrier scattering mechanisms, and short-channel effects-are discussed in detail. In the last section, the authors' perspective on the challenges and opportunities in the growth and electronic applications of 2D semiconductors is presented. 2D Materials

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Engineering the Growth of MoS₂ via Atomic Layer Deposition of Molybdenum Oxide Film Precursor

Cited by 45 publications

References 16 publications

Band Alignment in As‐Transferred and Annealed Graphene/MoS₂ Heterostructures

Band Alignment in As‐Transferred and Annealed Graphene/MoS₂ Heterostructures

High‐Performance Monolayer MoS₂ Films at the Wafer Scale by Two‐Step Growth

Two‐Dimensional Semiconductors: From Materials Preparation to Electronic Applications

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Engineering the Growth of MoS2 via Atomic Layer Deposition of Molybdenum Oxide Film Precursor

Cited by 45 publications

References 16 publications

Band Alignment in As‐Transferred and Annealed Graphene/MoS2 Heterostructures

Band Alignment in As‐Transferred and Annealed Graphene/MoS2 Heterostructures

High‐Performance Monolayer MoS2 Films at the Wafer Scale by Two‐Step Growth

Two‐Dimensional Semiconductors: From Materials Preparation to Electronic Applications

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Product

Resources

About

Engineering the Growth of MoS₂ via Atomic Layer Deposition of Molybdenum Oxide Film Precursor

Band Alignment in As‐Transferred and Annealed Graphene/MoS₂ Heterostructures

Band Alignment in As‐Transferred and Annealed Graphene/MoS₂ Heterostructures

High‐Performance Monolayer MoS₂ Films at the Wafer Scale by Two‐Step Growth