High‐Performance Monolayer MoS<sub>2</sub> Films at the Wafer Scale by Two‐Step Growth

Xu, Xiangming; Das, Gobind; He, Xin; Hedhili, Mohamed N.; Fabrizio, E. Di; Zhang, Xixiang; Alshareef, Husam N.

doi:10.1002/adfm.201901070

Cited by 44 publications

(48 citation statements)

References 54 publications

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“…Figure 1c shows the Raman spectra before (red line) and after (cyan line) the transfer. The red spectrum presents the E 2g and A 1g modes at 383 cm −1 and at 403 cm −1 of single-layer MoS 2 , representative of the in-plane and out-of-plane vibrations of S-Mo-S, respectively 32 . After the transfer process, the MoS 2 Raman modes appear slightly shifted and broadened, i.e., the E 2g and A 1g modes peak at 380 cm −1 and at 400 cm −1 , respectively.…”

Section: Fabrication Of Mosmentioning

confidence: 99%

Low-voltage 2D materials-based printed field-effect transistors for integrated digital and analog electronics on paper

et al. 2020

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Paper is the ideal substrate for the development of flexible and environmentally sustainable ubiquitous electronic systems, which, combined with two-dimensional materials, could be exploited in many Internet-of-Things applications, ranging from wearable electronics to smart packaging. Here we report high-performance MoS 2 field-effect transistors on paper fabricated with a "channel array" approach, combining the advantages of two large-area techniques: chemical vapor deposition and inkjet-printing. The first allows the pre-deposition of a pattern of MoS 2 ; the second, the printing of dielectric layers, contacts, and connections to complete transistors and circuits fabrication. Average I ON /I OFF of 8 × 10 3 (up to 5 × 10 4) and mobility of 5.5 cm 2 V −1 s −1 (up to 26 cm 2 V −1 s −1) are obtained. Fully functional integrated circuits of digital and analog building blocks, such as logic gates and current mirrors, are demonstrated, highlighting the potential of this approach for ubiquitous electronics on paper.

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Section: Fabrication Of Mosmentioning

confidence: 99%

Low-voltage 2D materials-based printed field-effect transistors for integrated digital and analog electronics on paper

et al. 2020

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“…[14][15][16][17][18] The emerging applications of 2D materials demand new synthesis and integration processes. Furthermore, to achieve commercial applications, much effort has been devoted to the large-area synthesis [19][20][21] and patterning [22][23][24] of 2D materials to ensure the transition of these unique materials from the laboratory to industrial manufacturing. However, most reported studies rely on conventional CVD synthesis, [25] and MOCVD, [26,27] which are mostly relatively high-temperature processes.…”

mentioning

confidence: 99%

Sulfurization Engineering of One‐Step Low‐Temperature MoS₂ and WS₂ Thin Films for Memristor Device Applications

Serna

Mohan

et al. 2021

Adv Elect Materials

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in scaling-down, in-memory computing as an emerging alternative of traditional von Neumann architecture has attracted extensive research interest, which requires fast and scalable memory devices such as Resistive Random-Access Memory (RRAM), also known as memristors, Phase-Change Memory (PCM), and Magnetoresistive Random-Access Memory (MRAM). [2] Meanwhile, 2D materials have been widely studied, and several applications such as transistors, [3][4][5] flexible electronics, [6,7] photodetectors, [8,9] and more recently, memristors devices, [10][11][12][13][14][15] have been demonstrated. Due to the unique properties of 2D materials, memristors based on 2D materials have shown outstanding electrical properties, including high on-off ratio, low switching thresholds (≈100 mV), fast switching speed, ultra-low power consumption (fJ per switching), and THz operation. [14][15][16][17][18] The emerging applications of 2D materials demand new synthesis and integration processes. Furthermore, to achieve commercial applications, much effort has been devoted to the large-area synthesis [19][20][21] and patterning [22][23][24] of 2D materials to ensure the transition of these unique materials from the laboratory to industrial manufacturing. However, most reported studies rely on conventional CVD synthesis, [25] and MOCVD, [26,27] which are mostly relatively high-temperature processes. Due to the dissimilarity of synthesis equipment and complexity of synthesis procedures, a standard and simple process applicable for the industrial manufacturing of wafer-scale 2D materials remains a challenge. As an alternative to conventional CVD, studies have shown that sulfurization of thin metallic films can result in the large-scale synthesis of MoS 2 and WS 2 . One of the advantages of sulfurization processes, compared to the conventional CVD method, is large area coverage and uniformity of the as-grown film, due to simultaneously sulfurization over the entire substrate. Recent works have demonstrated synthesis of MoS 2 with vertically aligned layers, [28] sulfurization for horizontally layered MoS 2 with the high-temperature process (above 700 °C), [29,30] and relatively long sulfurization times (more than 1 h). [31] For this reason, one of the main challenges in sulfurization processes is to use temperatures below 700 °C while achieving horizontally layered films in short processing times. This work successfully demonstrates a simple method to synthesize MoS 2 and WS 2 films via one-step low-temperature sulfurization. The 2D materials have been of considerable interest as new materials for device applications. Non-volatile resistive switching applications of MoS 2 and WS 2 have been previously demonstrated; however, these applications are dramatically limited by high temperatures and extended times needed for the large-area synthesis of 2D materials on crystalline substrates. The experimental results demonstrate a one-step sulfurization method to synthesize MoS 2 and WS 2 at 550 °C in 15 min on sapphire wafers. Furthermore, a large area t...

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“…This MoS 2 formation process has been described elsewhere by our group. 24 , 25 The MoS 2 film was patterned through a dry etching process, and source/drain (S/D) contact and side-gate Au/Ti electrodes were patterned through a lift-off process. Then, the MX-MOF film was spin-coated on the entire semifinished device from a methanol-based MX-MOF suspension.…”

Section: Resultsmentioning

confidence: 99%

Iontronics Using V₂CT_x MXene-Derived Metal–Organic Framework Solid Electrolytes

et al. 2020

ACS Nano

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Electronic applications of porous metal–organic frameworks (MOFs) have recently emerged as an important research area. However, there is still no report on using MOF solid electrolytes in iontronics, which could take advantage of the porous feature of MOFs in the ionic transport. In this article, MXene-derived two-dimensional porphyrinic MOF (MX-MOF) films are demonstrated as an electronic-grade proton-conducting electrolyte. Meanwhile, the MX-MOF film shows high quality, chemical stability, and capability of standard device patterning processes ( e . g ., dry etching and optical and electron beam lithography). Using the commercialized nanofabrication processes, an electric double-layer (EDL) transistor is demonstrated using the MX-MOF film (derived from V 2 CT x MXene) as an ionic gate and MoS 2 film as a semiconducting channel layer. The EDL transistor, operated by applying an electric field to control the interaction between ions and electrons, is the core device platform in the emerging iontronics field. Therefore, The MX-MOF, confirmed as a solid electrolyte for EDL transistor devices, could have a significant impact on iontronics research and development.

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High‐Performance Monolayer MoS₂ Films at the Wafer Scale by Two‐Step Growth

Cited by 44 publications

References 54 publications

Low-voltage 2D materials-based printed field-effect transistors for integrated digital and analog electronics on paper

Low-voltage 2D materials-based printed field-effect transistors for integrated digital and analog electronics on paper

Sulfurization Engineering of One‐Step Low‐Temperature MoS₂ and WS₂ Thin Films for Memristor Device Applications

Iontronics Using V₂CT_x MXene-Derived Metal–Organic Framework Solid Electrolytes

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High‐Performance Monolayer MoS2 Films at the Wafer Scale by Two‐Step Growth

Cited by 44 publications

References 54 publications

Low-voltage 2D materials-based printed field-effect transistors for integrated digital and analog electronics on paper

Low-voltage 2D materials-based printed field-effect transistors for integrated digital and analog electronics on paper

Sulfurization Engineering of One‐Step Low‐Temperature MoS2 and WS2 Thin Films for Memristor Device Applications

Iontronics Using V2CTx MXene-Derived Metal–Organic Framework Solid Electrolytes

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High‐Performance Monolayer MoS₂ Films at the Wafer Scale by Two‐Step Growth

Sulfurization Engineering of One‐Step Low‐Temperature MoS₂ and WS₂ Thin Films for Memristor Device Applications

Iontronics Using V₂CT_x MXene-Derived Metal–Organic Framework Solid Electrolytes