Engineering strained silicon-looking back and into the future

Acosta, Tony; Sood, Sumant

doi:10.1109/mp.2006.1664067

Cited by 19 publications

(6 citation statements)

References 6 publications

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“…Dain | direction [3][4][5][6][7][8]. Therefore, MOSFET has the potential to be a suitable chip stress sensor for micro-electronic packaging because the measurements are nondestructive, in-situ, and real time.…”

Section: Sourcementioning

confidence: 99%

Calibrate MOSFET Micro-Stress Sensors for Electronic Packaging

Chung

Tang

Chao

et al. 2008

2008 10th Electronics Packaging Technology Conference

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are described in Second 3. Then, the validity of the new Stress measurements in microelectronic packaging through calibration methodology is demonstrated through the MOSFET devices have attracted great attentions because experimental data in Second 4. Thermal, mechanical, and the measurement is in-situ and nondestructive. In this study, a thermo-mechanical property measurements were next new assembled methodology was designed and applied so that performed respectively through the aforementioned fixture to the calibration procedures on MOSFET stress sensors can be study the stress behaviors of the devices under room and simpler and more accurate. Under mechanical, thermal, and elevated temperatures. After the experimental process, data thermo-mechanical coupling effects, parameters of the analyses were performed to study the uniformity as well as the MOSFET devices were extracted based on linear relationships applicability of the devices for stress extraction. between drain current variation and the mechanical and/or The Theoretical Model thermal effects, and the results suggested that the MOSFET In this study, the p-MOSFETs devices were fabricated devices is a useful in-situ stress sensors in electronic through standard commercialized process by TSMC (Taiwan packaging. It is concluded that the newly experimental design Semiconductor Manufacturing Company). The channel length and the extracted parameters are useful for MOSFET stress sensor's design nd applications.(L) of the MOSFET devices iS 0.15 Rtm and the channel width (W) is 1 gim. The test wafers were first sliced into strip along

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Section: Sourcementioning

confidence: 99%

Calibrate MOSFET Micro-Stress Sensors for Electronic Packaging

Chung

Tang

Chao

et al. 2008

2008 10th Electronics Packaging Technology Conference

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“…Global strain can be introduced before device processing by the epitaxial growth of Si on strain relaxed SiGe buffers [6,7]. It can also be generated during device processing using one of the process induced strain techniques [8,9] such as selective epitaxy of SiGe in the source and drain regions or compressive/tensile overlayers. Different strain types and magnitudes are required for p-channels and n-channels in CMOS circuits [9].…”

Section: Introductionmentioning

confidence: 99%

“…It can also be generated during device processing using one of the process induced strain techniques [8,9] such as selective epitaxy of SiGe in the source and drain regions or compressive/tensile overlayers. Different strain types and magnitudes are required for p-channels and n-channels in CMOS circuits [9]. Especially in the case of n-channels, an increase in the local tensile strain is demanded.…”

Section: Introductionmentioning

confidence: 99%

Local strained silicon platform based on differential SiGe/Si epitaxy

Karmous

Oehme

Werner

et al. 2011

Journal of Crystal Growth

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“…Both the literature and the theoretical analysis show that stress and/or strain lead mobility changes on a MOSFET (Metal Oxide Semiconductor Field Effective Transistor) device so that the device behaviors change at the same time [1][2][3][4][5][6][7][8]. Consequently, MOSFET has the potential to be a suitable chip stress sensor for microelectronic packaging because the measurements are nondestructive, in-situ, and real time.…”

Section: Introductionmentioning

confidence: 99%

On the study of MOSFET micro-sensors for electronic packaging

Yang

Chao

Tseng³

et al. 2007

2007 International Conference on Electronic Materials and Packaging

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The purpose of this paper is to study the MOSFET stress sensor behaviors and to develop the related measurement methodology. With the newly developed technology, the piezoresistance coefficients of the MOSFET were extracted, and the strain and temperature effect induced MOSFET characteristics were obtained. The results of this study can be used to adjust the chip structure in a packaging so that the optimal packaging technology and material can be chosen, and accuracies of the numerical analysis can be verified through experimental data with the new technology studied in this paper.

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Engineering strained silicon-looking back and into the future

Cited by 19 publications

References 6 publications

Calibrate MOSFET Micro-Stress Sensors for Electronic Packaging

Calibrate MOSFET Micro-Stress Sensors for Electronic Packaging

Local strained silicon platform based on differential SiGe/Si epitaxy

On the study of MOSFET micro-sensors for electronic packaging

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