Calibrate MOSFET Micro-Stress Sensors for Electronic Packaging

Abstract

are described in Second 3. Then, the validity of the new Stress measurements in microelectronic packaging through calibration methodology is demonstrated through the MOSFET devices have attracted great attentions because experimental data in Second 4. Thermal, mechanical, and the measurement is in-situ and nondestructive. In this study, a thermo-mechanical property measurements were next new assembled methodology was designed and applied so that performed respectively through the aforementioned fixture to the calibration procedures on MOSFET stress sensors can be study the stress behaviors of the devices under room and simpler and more accurate. Under mechanical, thermal, and elevated temperatures. After the experimental process, data thermo-mechanical coupling effects, parameters of the analyses were performed to study the uniformity as well as the MOSFET devices were extracted based on linear relationships applicability of the devices for stress extraction. between drain current variation and the mechanical and/or The Theoretical Model thermal effects, and the results suggested that the MOSFET In this study, the p-MOSFETs devices were fabricated devices is a useful in-situ stress sensors in electronic through standard commercialized process by TSMC (Taiwan packaging. It is concluded that the newly experimental design Semiconductor Manufacturing Company). The channel length and the extracted parameters are useful for MOSFET stress sensor's design nd applications.(L) of the MOSFET devices iS 0.15 Rtm and the channel width (W) is 1 gim. The test wafers were first sliced into strip along