Engineering of the dielectric–semiconductor interface in organic field-effect transistors

Sun, Xiangnan; Di, Chong‐an; Liu, Yunqi

doi:10.1039/b921449f

Cited by 155 publications

(135 citation statements)

References 149 publications

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“…Three possible mechanisms between the semiconductor and dielectric are often cited to explain a dielectric dependence of carrier mobility and include: i) interfacial trap states, [23][24][25] ii) templated growth at the interface, 26 and iii) planarization of the interface. 11,12,15 Each of these three mechanisms 2018) can affect the carrier mobility within the channel of a TFT, and all are dependent on the quality of the interface between the dielectric and semiconductor.…”

confidence: 99%

Electron mobility enhancement in solution-processed low-voltage In2O3 transistors via channel interface planarization

et al. 2018

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The quality of the gate dielectric/semiconductor interface in thin-film transistors (TFTs) is known to determine the optimum operating characteristics attainable. As a result in recent years the development of methodologies that aim to improve the channel interface quality has become a priority. Herein, we study the impact of the surface morphology of three solution-processed high-k metal oxide dielectrics, namely AlOx, HfOx, and ZrOx, on the operating characteristics of In2O3 TFTs. Six different dielectric configurations were produced via single or double-step spin-casting of the various precursor formulations. All layers exhibited high areal capacitance in the range of 200 to 575 nF/cm2, hence proving suitable, for application in low-voltage n-channel In2O3 TFTs. Study of the surface topography of the various layers indicates that double spin-cast dielectrics exhibit consistently smoother layer surfaces and yield TFTs with improved operating characteristics manifested, primarily, as an increase in the electron mobility (µ). To this end, µ is found to increase from 1 to 2 cm2/Vs for AlOx, 1.8 to 6.4 cm2/Vs for HfOx, and 2.8 to 18.7 cm2/Vs for ZrOx-based In2O3 TFTs utilizing single and double-layer dielectric, respectively. The proposed method is simple and potentially applicable to other metal oxide dielectrics and semiconductors.

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confidence: 99%

Electron mobility enhancement in solution-processed low-voltage In2O3 transistors via channel interface planarization

et al. 2018

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“…The enhanced OTFTs performance was mainly resulted from increased grain size and/or improved crystalline quality of the organic thin films. [3][4][5] Generally, the growth of large-size two dimensional crystalline structures is beneficial for improving device performance. It has been shown that the charge mobility in OTFTs increases monotonically with the grain size as a result of decreased grain boundary density of organic thin film, because the grain boundary is known as an energy barrier in charge transport and therefore limits the charge mobility.…”

Section: Introductionmentioning

confidence: 99%

Growth of large-size-two-dimensional crystalline pentacene grains for high performance organic thin film transistors

Du¹,

Li²,

Wang³

et al. 2012

AIP Advances

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New approach is presented for growth of pentacene crystalline thin film with large grain size. Modification of dielectric surfaces using a monolayer of small molecule results in the formation of pentacene thin films with well ordered large crystalline domain structures. This suggests that pentacene molecules may have significantly large diffusion constant on the modified surface. An average hole mobility about 1.52 cm2/Vs of pentacene based organic thin film transistors (OTFTs) is achieved with good reproducibility.

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“…In addition to the infl uence from the organic materials contained in the active layer, the nature of the dielectric material and its contact interface with the active layer play critical roles in determining the mobility and operating voltage. [133][134][135] Therefore, a wide range of materials have been explored as the gate dielectric to improve the mobility for organic thin-fi lm transistors (OTFTs), such as inorganic metal oxides, polymers, and molecules derived from biomaterials. [ 22,29,70,136,137 ] In particular, silk fi broin has come into the picture as a dielectric material for OFETs because of its excellent dielectric properties, mechanical fl exibility, and processability.…”

Section: Organic Field-effect Transistorsmentioning

confidence: 99%

Silk Fibroin for Flexible Electronic Devices

et al. 2015

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Flexible electronic devices are necessary for applications involving unconventional interfaces, such as soft and curved biological systems, in which traditional silicon-based electronics would confront a mechanical mismatch. Biological polymers offer new opportunities for flexible electronic devices by virtue of their biocompatibility, environmental benignity, and sustainability, as well as low cost. As an intriguing and abundant biomaterial, silk offers exquisite mechanical, optical, and electrical properties that are advantageous toward the development of next-generation biocompatible electronic devices. The utilization of silk fibroin is emphasized as both passive and active components in flexible electronic devices. The employment of biocompatible and biosustainable silk materials revolutionizes state-of-the-art electronic devices and systems that currently rely on conventional semiconductor technologies. Advances in silk-based electronic devices would open new avenues for employing biomaterials in the design and integration of high-performance biointegrated electronics for future applications in consumer electronics, computing technologies, and biomedical diagnosis, as well as human-machine interfaces.

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Engineering of the dielectric–semiconductor interface in organic field-effect transistors

Cited by 155 publications

References 149 publications

Electron mobility enhancement in solution-processed low-voltage In2O3 transistors via channel interface planarization

Electron mobility enhancement in solution-processed low-voltage In2O3 transistors via channel interface planarization

Growth of large-size-two-dimensional crystalline pentacene grains for high performance organic thin film transistors

Silk Fibroin for Flexible Electronic Devices

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