Engineering of InN epilayers by repeated deposition of ultrathin layers in pulsed MOCVD growth

Significant Carrier Extraction Enhancement at the Interface of an InN/p-GaN Heterojunction under Reverse Bias Voltage

“…Because of the low InN dissociation temperature and high equilibrium nitrogen (N 2 ) vapor pressure over the InN film, the preparation of InN requires a low growth temperature. Due to the low (400–500 °C) growth temperatures, the growth of InN is restricted by a low decomposition rate of NH 3 and reduced migration of adatoms on the surface, which leads to metallic In formation on the surface [40,41]. In our sample, no metallic In droplets were observed on the surface of the InN layer.…”

“…The TMIn pulse length controls the thickness of the deposited ultrathin InN layer, while the pause length controls the time allowed for surface migration of In adatoms on the surface and the amount of additional reactive nitrogen. The ratio between the pause and pulse determines the effective V/III ratio, which can be expressed as VIII=(VIII)nom(1+tptTMIn) [41]. Here, ( V/III ) nom is the nominal V/III ratio, in our case ~38,000 during the TMIn pulse of 7 s, t TMIn and t P are the TMIn pulse and pause lengths, respectively.…”

Direct Auger recombination and density-dependent hole diffusion in InN

“…A detailed description of the growth procedures and structural characterization of the layers is presented in ref. 18 . The layer thickness and the density of residual electrons in the epilayers varied from 30 nm to 400 nm and from 6 × 10 18 cm −3 to 5 × 10 19 cm −3 , respectively.…”

Elucidating the role of nitrogen plasma composition in the low-temperature self-limiting growth of indium nitride thin films

“…[8][9][10][11][12] However, synthesis of high-quality and defect free InN lms via conventional growth techniques is quite challenging among other III-nitrides due to its low dissociation temperature, which leads to undesired decomposition into metallic In and N 2 gas around 500 C. [13][14][15][16] Conventional synthesis routes such as chemical vapor deposition (CVD), generally utilize NH 3 as the nitrogen co-reactant, which has relatively poor thermal reactivity and therefore require elevated process temperatures and excessively high (typically >10 4 ) NH 3 /TMI (V/III) ratios. [17][18][19][20] Although the use of N 2 plasma as a co-reactant has been shown to improve nitrogen reactivity in the plasma-assisted metal-organic CVD (PA-MOCVD) producing high-quality crystalline InN lms, the process temperatures were still relatively high within the range of 550-775 C. 21 Molecular beam epitaxy (MBE) has been another successful route to produce high-quality, single crystal InN lms, however MBE also requires similar high substrate temperatures for epitaxial growth. [22][23][24] Unfortunately, such harsh process conditions make the realization of InN-based opto-electronic device structures impractical on lower temperature-compatible substrates (CMOS wafers, glass, exible polymers) and applications (monolithically integrated CMOS/III-V devices, exible/wearable electronics).…”