Engineering Interface Composition for Passivation of HgCdTe Photodiodes

Pal, R.; Malik, Amit; Srivastav, Vanya; Sharma, B. L.; Balakrishnan, V.R.; Dhar, V.; Vyas, H. P.

doi:10.1109/ted.2006.883817

Cited by 10 publications

(4 citation statements)

References 11 publications

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“…Therefore, performance of the detector is sensitive to the surface passivation. Shallow etch mesa isolation of the detector elements and interface graded layer passivation are used to control the lateral currents [13]. Figure 7 shows the dark current in the n + /p and n + /ν/π/p -structure diodes.…”

Section: Resultsmentioning

confidence: 99%

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Performance of Hg_1−xCdxTe infrared focal plane array at elevated temperature

Singh¹,

Pal²

2017

Semicond. Sci. Technol.

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The simulated optical and electrical performance of the infrared HgCdTe focal plane array (FPA) for elevated operation temperature is reported. The depleted absorber layer is explored for equilibrium mode of operation up to 160 K. A resonant cavity is created to improve photon-matter interaction and hence, reduces the required absorption volume. The volume of the active region of HgCdTe detector is reduced by 70% in this manner. Dark current density is decreased without compromising the quantum efficiency. The effect of the reduced band filling effect leading to higher absorption coefficient and more efficient utilization of incident flux is employed. High quantum efficiency is achieved in a thin compositionally graded n + /ν/π/p HgCdTe photo-diode. This architecture helps to minimize the requirement of charge handling capacity in the CMOS read-out integrated circuit (ROIC) as the operation temperature is increased. Quantum efficiency ∼30% or above is shown to be sufficient for Noise Equivalent Temperature Difference (NETD) less than 20 mK with the reported design.

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Section: Resultsmentioning

confidence: 99%

“…A set of continuity and heat equations are solved for macroscopic numerical simulation of the detectors [10][11][12][13][14][15][16]. The dark current, quantum efficiency and NETD are simulated using the parameters shown in table 2.…”

Section: Modelmentioning

confidence: 99%

Performance of Hg_1−xCdxTe infrared focal plane array at elevated temperature

Singh¹,

Pal²

2017

Semicond. Sci. Technol.

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“…In a previous study, Bothra's model 6 has been utilized for determining the characteristic photoelectronic properties of individual HgCdTe epilayers in a multilayered HgCdTe structure. 9 In the present work, we have evaluated the B + implanted n + -n-p HgCdTe structure using differential Hall/resistivity measurement for carrier concentration/mobility depth profile and TMWR measurement for the evaluation of lifetime and SRV.…”

mentioning

confidence: 99%

“…The TMWR signal was analyzed with a best fit to the Bothra's theoretical model as done in a previous work. 9 Figures 1͑a͒-1͑c͒ show the differential Hall profiles for the three samples viz. S1, S2, and S3.…”

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confidence: 99%

Evaluation of B+-implanted n+-n-p HgCdTe structures using transient microwave reflectance

Manchanda

Pal

Malik³

et al. 2009

Journal of Applied Physics

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Transient microwave reflectance (TMWR) has been used to investigate the n+-n-p HgCdTe structures formed by B+ implantation and moderate annealing. Vacancy-doped p-type bulk HgCdTe (x∼0.285) crystals were used in this work. 130 keV B+ ions were implanted at a dose of 1×1014 cm−2. Samples were successively thinned through etching in 0.5% Br2 in CH3OH solutions with a standardized procedure for differential Hall/resistivity measurements. At every differential etch step, the TMWR signal was also recorded and theoretically analyzed for estimating bulk lifetime and surface recombination velocity. Results for as-implanted as well as moderately annealed samples have been presented. The study indicated the usefulness of TMWR analysis in evaluating implant anneal process for the formation of n+-n-p HgCdTe structures for photodetector fabrication.

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