Engineered quantum dot single-photon sources

Abstract

Fast, high efficiency and low error single-photon sources are required for the implementation of a number of quantum information processing applications. The fastest triggered single-photon sources to date have been demonstrated using epitaxially grown semiconductor quantum dots (QDs), which can be conveniently integrated with optical microcavities. Recent advances in QD technology, including demonstrations of high temperature and telecommunications wavelength single-photon emission, have made QD single-photon sources more practical. Here we discuss the applications of single-photon sources and their various requirements, before reviewing the progress made on a QD platform in meeting these requirements.

Direct generation of linearly polarized single photons with a deterministic axis in quantum dots

“…To develop these non-classical light sources, the nanophotonics of semiconductor quantum dots (QDs) [7][8][9] has been a field under intense scientific investigation. Although ultrapure and highly indistinguishable single-photon generation has been achieved in various arsenide-based QD systems [10][11][12][13][14], the large band offsets and strong exciton binding energies of III-nitride materials are needed for the realization of polarized photon emission [15][16][17] and room temperature operation [18,19].…”

Single-photon emission of InAs/InP quantum dashes at 1.55 μm and temperatures up to 80 K

“…Key elements of such systems are pure and efficient sources of single photons. It has been well established that exciton complexes confined within a self-assembled semiconductor quantum dot (QD) can be a true highly reliable microscopic single photon source (SPS) [ 6,7 ]. Due to the ability of monolithic integration of QDs with today's semiconductor devices it has become feasible to fabricate SPSs with extraordinary parameters, combining nearly perfect levels of photon purity and indistinguishability as well as high extraction efficiencies reaching at least 60-70 % [ 8,9 ].…”

Cavity-enhanced resonant tunneling photodetector at telecommunication wavelengths

“…[1][2][3][4][5][6] The commonly used material system for emitters and detectors in the important telecommunication windows around 1.3 and 1.55 lm are III-V-semiconductors that are lattice-matched to InP substrates. However, this material system also has some drawbacks such as the poor performance of Bragg mirrors due to the small refractive index contrast and the small available band offsets.…”