Single-photon emission of InAs/InP quantum dashes at 1.55 μm and temperatures up to 80 K

Abstract

We report on single photon emission from a self-assembled InAs/InGaAlAs/InP quantum dash emitting at 1.55 µm at elevated temperatures. The photon auto-correlation histograms of the emission from a charged exciton indicate clear antibunching dips with as-measured

High‐Purity Triggered Single‐Photon Emission from Symmetric Single InAs/InP Quantum Dots around the Telecom C‐Band Window

“…In addition, several matrices/barriers lattice-matched to InP can be considered, which gives additional freedom in modifying the confinement and strain, and hence giving convenient tuning knobs to tailor all the essential single dot characteristic. [26][27][28][29][30][31] There exist approaches able to give a lower spatial density of InAs on InP dots. [32,33] For instance, combining the InP matrix with the double-cap technique in metalorganic chemical vapor deposition (MOCVD) showed high suppression of multiphoton events under non-resonant [34] and quasi-resonant [35,36] excitation.…”

“…This alternative InAs/InP material system is actually the technologically easiest choice because such dots emit naturally in the 1.55 µm range and no special strain engineering has to be applied, which allows overcoming some of the mentioned fabrication drawbacks of the GaAs‐based materials. In addition, several matrices/barriers lattice‐matched to InP can be considered, which gives additional freedom in modifying the confinement and strain, and hence giving convenient tuning knobs to tailor all the essential single dot characteristic . There exist approaches able to give a lower spatial density of InAs on InP dots .…”

Laterally coupled distributed feedback lasers emitting at 2 μm with quantum dash active region and high-duty-cycle etched semiconductor gratings

“…[8][9][10] Furthermore, it is worth mentioning that Qdashes may also find applications beyond lasers, as single photon sources emitting at 1.55 lm, further exploiting their quantum properties. 11 The fact that the emission wavelength of Qdashes can be tuned based on their size, 12 can particularly benefit gas sensing applications, which require well-controlled emission wavelengths to match the specific absorption lines of different gases. In fact, within our work, we find that by also changing the barrier material and carefully optimizing the growth conditions of the new structure, a further shift of the emission wavelength may be achieved and high-performance lasers emitting above 2 lm are obtained while maintaining a binary InAs Qdash composition.…”

InAs on InP Quantum Dashes as Single Photon Emitters at the Second Telecommunication Window: Optical, Kinetic, and Excitonic Properties

“…using additional strain-reducing layer to operate up to even 1.5 µm [7,8]. While InP based nanostructures have been widely studied around 1.55 µm [9][10][11], there is still not much information about their possible operation close to 1.3 µm, required for the transmission in the O-band telecommunication range.…”

“…The InAs/InGaAlAs/InP quantum dash (QDash) system is characterized by elongated in-plane geometry of the nanostructures along [1][2][3][4][5][6][7][8][9][10] direction with approximately triangular cross-sectional shape and high areal density (> 10 10 cm −2 ) [12]. The sample structure has been grown by EIKO gas source molecular beam epitaxy system using S-doped InP (001) substrates.…”