Energy Transfer Between Femtosecond Laser and Silicon Carbide

A Review of Femtosecond Laser Processing of Silicon Carbide

“…Due to the targeted and detailed analysis of the mechanisms involved in the femtosecond laser-SiC interaction in the author's published papers-Refs. [41,43]-the relevant processes induced by femtosecond laser pulses in SiC will be briefly introduced in this paper. The energy transfer of craters in femtosecond laser processing of single crystal SiC can be described as the main role of the free carrier absorption coefficient in the total absorption coefficient [41].…”

“…[41,43]-the relevant processes induced by femtosecond laser pulses in SiC will be briefly introduced in this paper. The energy transfer of craters in femtosecond laser processing of single crystal SiC can be described as the main role of the free carrier absorption coefficient in the total absorption coefficient [41]. The primary carrier density absorption mechanism is two-photon absorption, followed by three-photon absorption and Auger recombination effect, with collision ionization playing a less significant role.…”

“…The debris adsorption device in the femtosecond laser precision micromachining system is utilized to capture debris produced during the machining process. The ultrafast pulses generated by femtosecond lasers facilitate nonlinear absorption processes, minimizing thermal effects and resulting in precise material removal and modification at the micro-and nanoscale levels [41]. The femtosecond laser has emerged as an ideal tool for SiC machining and is currently attracting growing attention.…”