Abstract:A new scheme of energy storage in single-quantum-well semiconductor lasers is analyzed. This scheme involves the storage of the majority of injected carriers in the continuum states of the surrounding bulk material, in which the carrier density is diluted and the higher-order carrier-density-dependent recombination processes are much smaller. This allows the inversion level to build up to a much higher level during the pumping stage of Q switching. The possibility of using indirect-band-gap semiconductors for … Show more
“…Finally, these results suggest that device architecture can be tailored to meet various performance requirements such as high brightness, or energy storage applications. 12 …”
Section: Carrier Lifetime Saturation In Ingaas Single Quantum Wellsmentioning
“…Finally, these results suggest that device architecture can be tailored to meet various performance requirements such as high brightness, or energy storage applications. 12 …”
Section: Carrier Lifetime Saturation In Ingaas Single Quantum Wellsmentioning
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.