Energy spectrum and effective mass of carriers in the InSe/GaSe superlattice

Gashimzade, F. M.; Mustafaev, N. B.

doi:10.1007/s002570050030

Cited by 6 publications

(3 citation statements)

References 16 publications

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“…The space group is P6m2. The proposed crystal structure differs from the superlattice proposed by Gashimzade et al 41 , where the stacking of InSe and GaSe are in their bulk-like crystal structure (γ-InSe/ε-GaSe). We choose this particular configuration since symmetries of individual monolayers of InSe and GaSe are similar (D 3h point group) and such similarity breaks in the bulk compounds.…”

Section: Theoretical Detailscontrasting

confidence: 49%

“…39 It has been experimentally demonstrated the growth of InSe on GaSe and GaSe on InSe 40 and there is also a theoretical paper of an InSe/GaSe superlattice within the framework of the effective mass approximation. 41 In this work we present the calculation of the electronic band structure and the lattice dynamics of an InGaSe 2 crystal by means of density functional theory. The elastic constants, thermal conductivity and optical properties have also been calculated.…”

Section: Introductionmentioning

confidence: 99%

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Electronic structure, lattice dynamics, and optical properties of a novel van der Waals semiconductor heterostructure: InGaSe2

et al. 2017

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There is a growing interest in the property dependence of transition metal dichalcogenides as function of the number of layers and formation of heterostructures. Depending on the stacking, doping, edge effects and interlayer distance, the properties can be modified, which open the door to novel applications which require a detailed understanding of the atomic mechanisms responsible for those changes. In this work, we analyze the electronic properties and lattice dynamics of a heterostructure constructed by simultaneously stacking InSe layers and GaSe layers bounded by van der Waals forces. We have assumed the same space group of GaSe, P6m2 as it becomes the lower energy configuration for other considered stackings. The structural, vibrational and optical properties of this layered compound have been calculated using density functional theory. The structure is shown to be energetically, thermally and elastically stable, which indicates its possible chemical synthesis. A correlation of the theoretical physical properties with respect to its parent compounds is extensively discussed. One of the most interesting properties is the low thermal conductivity, which indicates its potential use in thermolectric applications. Additionally, we discuss the possibility of using electronic gap engineering methods, which can help into tune the optical emission in a variable range close to that used in the field of biological systems (NIR). Finally, the importance of considering properly van der Waals dispersion in layered materials has been emphasized as included in the exchange correlation functional. As for the presence of atoms with important spin orbit coupling, relativistic corrections have been included.

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Section: Theoretical Detailscontrasting

confidence: 49%

Section: Introductionmentioning

confidence: 99%

Electronic structure, lattice dynamics, and optical properties of a novel van der Waals semiconductor heterostructure: InGaSe2

et al. 2017

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“…There has long been interest in investigating the properties of III–VI heterostructures such as InSe/GaSe, motivated by their potential for photodiode applications. − These studies initially focused on the optoelectronic properties of heterojunctions formed from bulk crystals by the optical contact method. , More recently, following the exfoliation of these materials into a nanoflake form, few-layer InSe nanodevices were demonstrated as flexible photodetectors, , and n-InSe/p-GaSe nanoflake heterostructures were shown to have potential in light emitting or photodetection devices, , which has motivated an increasing theoretical interest in the electronic, optical, and thermal properties of these group-III monochalcogenide heterostructures. , However, the electrical transport properties of InSe/GaSe heterostructures in the nanoflake form remain largely unexplored.…”

Section: Introductionmentioning

confidence: 99%

Interfacial Charge Transfer and Gate-Induced Hysteresis in Monochalcogenide InSe/GaSe Heterostructures

Kumar

Wang

et al. 2020

ACS Appl. Mater. Interfaces

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Heterostructures of two-dimensional (2D) van der Waals semiconductor materials offer a diverse playground for exploring fundamental physics and potential device applications. In InSe/GaSe heterostructures formed by sequential mechanical exfoliation and stacking of 2D monochalcogenides InSe and GaSe, we observe charge transfer between InSe and GaSe because of the 2D van der Waals interface formation and a strong hysteresis effect in the electron transport through the InSe layer when a gate voltage is applied through the GaSe layer. A gate voltagedependent conductance decay rate is also observed. We relate these observations to the gate voltage-dependent dynamical charge transfer between InSe and GaSe layers.

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P‐Type 2D Semiconductors for Future Electronics

Xiong

Feng

et al. 2023

Advanced Materials

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Abstract2D semiconductors represent one of the best candidates to extend Moore's law for their superiorities, such as keeping high carrier mobility and remarkable gate‐control capability at atomic thickness. Complementary transistors and van der Waals junctions are critical in realizing 2D semiconductors‐based integrated circuits suitable for future electronics. N‐type 2D semiconductors have been reported predominantly for the strong electron doping caused by interfacial charge impurities and internal structural defects. By contrast, superior and reliable p‐type 2D semiconductors with holes as majority carriers are still scarce. Not only that, but some critical issues have not been adequately addressed, including their controlled synthesis in wafer size and high quality, defect and carrier modulation, optimization of interface and contact, and application in high‐speed and low‐power integrated devices. Here the material toolkit, synthesis strategies, device basics, and digital electronics closely related to p‐type 2D semiconductors are reviewed. Their opportunities, challenges, and prospects for future electronic applications are also discussed, which would be promising or even shining in the post‐Moore era.

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Energy spectrum and effective mass of carriers in the InSe/GaSe superlattice

Cited by 6 publications

References 16 publications

Electronic structure, lattice dynamics, and optical properties of a novel van der Waals semiconductor heterostructure: InGaSe2

Electronic structure, lattice dynamics, and optical properties of a novel van der Waals semiconductor heterostructure: InGaSe2

Interfacial Charge Transfer and Gate-Induced Hysteresis in Monochalcogenide InSe/GaSe Heterostructures

P‐Type 2D Semiconductors for Future Electronics

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