Energy-separated sequential irradiation for ripple pattern tailoring on silicon surfaces

Kumar, T. Naveen; Kumar, Manish; Panchal, Vandana; Sahoo, Pratap K.; Kanjilal, D.

doi:10.1016/j.apsusc.2015.08.262

Cited by 11 publications

(3 citation statements)

References 31 publications

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“…Two-stage irradiation approach of solid surfaces has been used by various groups to develop new surface features and understanding of growth mechanism of such features [ 22 , 23 , 32 , 34 , 43 ]. Kumar et al investigated the role of amorphous/crystalline (a/c) interface using the approach of sequential irradiation of pre-rippled surface of Si (100) [ 22 , 23 ]. It was argued that the role of a/c interface cannot be ignored in comparison of sputtering and diffusion in surface rippling.…”

Section: Resultsmentioning

confidence: 99%

Effect of Grazing Angle Cross-Ion Irradiation on Ag Thin Films

et al. 2016

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Apart from the spherical shape, control over other shapes is a technical challenge in synthesis approaches of nanostructures. Here, we studied the effect of grazing angle cross-irradiation Ag thin films for the nanostructures evolution from a top-down approach. Ag thin films of different thicknesses were deposited on Si (100) and glass substrates by electron beam evaporation system and subsequently irradiated at grazing angle ions by 80 keV Ar+ in two steps (to induce effectively a cross-ion irradiation). Pristine films exhibited dense and uniform distribution of Ag nanoparticles with their characteristic surface plasmon resonance-induced absorption peak around 420 nm. When the film surfaces were treated with cross-grazing angle irradiation of Ar ions with varying effective fluences from 0.5 × 1017 ions/cm2 to 2.0 × 1017 ions/cm2, it was found that fluence values governed the competition of sputtering and sputter re-deposition of Ag. As a result, lower irradiation fluence favoured the formation of cone-like nanostructures, whereas high fluence values demonstrated dominant sputtering. Fluence-dependent modification of surface features was studied through the Fourier transform infrared spectroscopy and the Rutherford backscattering spectroscopy. Theoretical justifications for the underlying mechanisms are presented to justify the experimental results.

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Section: Resultsmentioning

confidence: 99%

Effect of Grazing Angle Cross-Ion Irradiation on Ag Thin Films

et al. 2016

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“…Finally, it should be mentioned that the methods applied in this work to investigate atomic mixing during ion irradiation of Si, Ge, and SiGe might be also applied to study the mechanisms of surface evolution and pattering in Si/Ge systems (cf., e.g., References [ 58 , 59 , 60 ]).…”

Section: Discussionmentioning

confidence: 99%

Ion-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means of Isotope Multilayer Structures

et al. 2017

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Crystalline and preamorphized isotope multilayers are utilized to investigate the dependence of ion beam mixing in silicon (Si), germanium (Ge), and silicon germanium (SiGe) on the atomic structure of the sample, temperature, ion flux, and electrical doping by the implanted ions. The magnitude of mixing is determined by secondary ion mass spectrometry. Rutherford backscattering spectrometry in channeling geometry, Raman spectroscopy, and transmission electron microscopy provide information about the structural state after ion irradiation. Different temperature regimes with characteristic mixing properties are identified. A disparity in atomic mixing of Si and Ge becomes evident while SiGe shows an intermediate behavior. Overall, atomic mixing increases with temperature, and it is stronger in the amorphous than in the crystalline state. Ion-beam-induced mixing in Ge shows no dependence on doping by the implanted ions. In contrast, a doping effect is found in Si at higher temperature. Molecular dynamics simulations clearly show that ion beam mixing in Ge is mainly determined by the thermal spike mechanism. In the case of Si thermal spike, mixing prevails at low temperature whereas ion beam-induced enhanced self-diffusion dominates the atomic mixing at high temperature. The latter process is attributed to highly mobile Si di-interstitials formed under irradiation and during damage annealing.

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“…In general, a low incidence angle stabilizes the surface and hampers pattern formation. Thus, the IBI induced amorphous layer plays an important role in the patterning process, via its free interface [47][48][49] and/or its amorphous to crystalline (a/c) interface [50,92,[94][95][96][97]. Therefore, under these conditions, the Erlich-Schwoebel barriers to surface-diffusion induced by the crystalline structure do not play any role, unless IBI takes place at target temperatures above the surface recrystallization temperature [98][99][100].…”

Section: Chronological Perspectivementioning

confidence: 99%

Surface nanopatterning by ion beam irradiation: compositional effects

Vazquez

Redondo-Cubero

Lorenz

et al. 2022

J. Phys.: Condens. Matter

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Surface nanopatterning induced by ion beam irradiation (IBI) has emerged as an effective nanostructuring technique since it induces patterns on large areas of a wide variety of materials, in short time, and at low cost. Nowadays, two main subfields can be distinguished within IBI nanopatterning depending on the irrelevant or relevant role played by the surface composition. In this review, we give an up-dated account of the progress reached when surface composition plays a relevant role, with a main focus on IBI surface patterning with simultaneous co-deposition of foreign atoms. In addition, we also review the advances in IBI of compound surfaces as well as IBI systems where the ion employed is not a noble gas species. In particular, for the IBI with concurrent metal co-deposition, we detail the chronological evolution of these studies because it helps us to clarify some contradictory early reports. We describe the main patterns obtained with this technique as a function of the foreign atom deposition pathway, also focusing in those systematic studies that have contributed to identify the main mechanisms leading to the surface pattern formation and development. Likewise, we explain the main theoretical models aimed at describing these nanopattern formation processes. Finally, we address two main special features of the patterns induced by this technique, namely, the enhanced pattern ordering and the possibility to produce both morphological and chemical patterns.

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Energy-separated sequential irradiation for ripple pattern tailoring on silicon surfaces

Cited by 11 publications

References 31 publications

Effect of Grazing Angle Cross-Ion Irradiation on Ag Thin Films

Effect of Grazing Angle Cross-Ion Irradiation on Ag Thin Films

Ion-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means of Isotope Multilayer Structures

Surface nanopatterning by ion beam irradiation: compositional effects

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