Energy scavenging using ZnO nanorods grown on flexible substrates

Wurtzite Zn1−xMgxO nanowires (NWs) are grown using metalorganic chemical vapor deposition technique with the highest Mg mole fraction of 0.29. The physical structure of the NWs remains invariant with increasing Mg incorporation while the diameters and lengths vary in the range 40–180 nm and 0.5–1.5 μm, respectively. Room temperature photoluminescence shows near band edge emission associated with free exciton emission that shifts to shorter wavelength with an increase in the Mg mole fraction. Hall measurement shows that electron mobility decreases with increasing Mg concentration. Revised elastic constants are suggested to explain the observed decrease in the lattice volume at a low Mg mole fraction.

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Growth of Non-Polar a-plane ZnO Layer On R-plane (1-102) Sapphire Substrate by Hydrothermal Synthesis

Jang¹,

Oh²,

2014

Journal of the Microelectronics and Packaging Society

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In this study, we grew non-polar ZnO nanostructure on (1-102) R-plane sapphire substrates. As for growth method of ZnO, we used hydrothermal synthesis which is known to have the advantages of low cost and easy process. For growth of non-polar, the deposited AZO seed buffer layer with of 80 nm on R-plane sapphire by radio frequency magnetron sputter was annealed by RTA(rapid thermal annealing) in the argon atmosphere. After that, we grew ZnO nanostructure on AZO seed layer by the added hexamethylenetramine (HMT) solution and sodium citrate at 90 o C. With two types of additives into solution, we investigated the structures and shapes of ZnO nanorods. Also, we investigate the possibility of formation of 2D non-polar ZnO layer by changing the ratio of two additives. As a result, we could get the non-polar A-plane ZnO layer with well optimized additives' concentrations.

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Energy scavenging using ZnO nanorods grown on flexible substrates

Cited by 3 publications

References 25 publications