Energy relaxation in a quantum dot at the edge of a two-dimensional topological insulator

Khomitsky, D. V.; Лаврухина, Е. А.; Chubanov, A. A.; Njiya, N.

doi:10.1134/s106378261711015x

Cited by 2 publications

(4 citation statements)

References 23 publications

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“…step-like form which coincides with the one used in our previous papers [37][38][39][40]. It indicates a simple property of a shortrange exchange interaction being active only inside the magnet area and on short distances ∼2a 1 near it.…”

Section: Averaging In the Qw Planesupporting

confidence: 86%

“…By taking into account ( 10), ( 14), ( 16) and ( 17) we arrive to the following form of the operator (7) which coincides with the one used in our previous papers [32][33][34][35]:…”

Section: Averaging Across the Qwmentioning

confidence: 73%

“…The Hamiltonian (30) has been introduced in a phenomenological way in our papers [37][38][39][40]. The first term in (30) is the Hamiltonian of the 1D edge states with the parameter A = 360 meV• nm for typical TI based on HgTe/CdTe QW [1][2][3][4][5].…”

Section: Energy Levels and Wavefunctionsmentioning

confidence: 99%

“…The experimental results on similar setups with magnetic stripes attached to the 2D TI edge have been reported recently [31], but the full development of the experimental basis here is still the matter of future research. Our model of QD formation by the finite magnetic barriers has been introduced in a phenomenological way in the earlier papers [32][33][34][35] as a qualitative approach which requires the justification from the microscopic point of view being the subject of the present paper. Starting from the microscopic model for the interaction of the magnetic moment of a single impurity with the edge states derived in [13,14], we arrive to the Hamiltonian describing the macroscopic magnetic barriers of different strength and orientation between which the bound states can be formed.…”

Section: Introductionmentioning

confidence: 99%

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Formation of bound states from the edge states of 2D topological insulator by macroscopic magnetic barriers

Khomitsky¹,

Konakov²,

Лаврухина³

2022

J. Phys.: Condens. Matter

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A model of bound state formation from the delocalized edge states of 2D topological insulator is derived by considering the effects of magnetic barriers attached to the edge of the HgTe/CdTe quantum well. The resulting structure has a spatial form of 1D quantum dot with variable number of bound states depending on barrier parameters. The spatial profile of exchange interaction between the edge states and barriers is derived from the interaction with single impurity magnetic moment and is generalized for the barrier bulk structure formed by ensemble of impurities. The resulting Hamiltonian is studied as a function of barrier parameters including their strength and orientation of the magnetic moments. It is shown that for parallel magnetization of two barriers at least two discrete levels are formed regardless of the barrier strength. For antiparallel magnetization at least a single bound state is formed for any strength of the barriers. Our results may help in design of novel types of quantum dots based on topological insulators.

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Section: Averaging In the Qw Planesupporting

confidence: 86%

“…By taking into account ( 10), ( 14), ( 16) and ( 17) we arrive to the following form of the operator (7) which coincides with the one used in our previous papers [32][33][34][35]:…”

Section: Averaging Across the Qwmentioning

confidence: 73%

Section: Energy Levels and Wavefunctionsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Formation of bound states from the edge states of 2D topological insulator by macroscopic magnetic barriers

Khomitsky¹,

Konakov²,

Лаврухина³

2022

J. Phys.: Condens. Matter

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Effect of spin–orbit coupling on the hot-electron energy relaxation in nanowires

Vartanian

Asatryan

Stepanyan

et al. 2020

Int. J. Mod. Phys. B

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The energy relaxation of hot electrons is proposed based on the spin–orbit (SO) interaction of both Rashba and Dresselhaus types with the effect of hot phonons. A continuum theory of optical phonons in nanowires taking into account the influence of confinement is used to study the hot-electron energy relaxation. The energy relaxation due to both confined (CO) and interface (IO) optical phonon emission on nanowire radius, electrical field strength, parameters of SO couplings and electron temperature is calculated. For considered values of the nanowire radius as well as other system parameters, scattering by IO phonons prevails over scattering by CO phonons. The presence of an electric field leads to the decrease of power loss in transitions between states with the same spin quantum numbers. With the increase of the electric field strength, the influence of the Dresselhaus SO interaction on the energy relaxation rate decreases. The effect of SO interaction does not change the previously obtained increasing dependence of power loss on electron temperature. The sensitivity of energy relaxation to the electric field also through the Rashba parameter allows controlling the rate of energy by electric field.

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Energy relaxation in a quantum dot at the edge of a two-dimensional topological insulator

Cited by 2 publications

References 23 publications

Formation of bound states from the edge states of 2D topological insulator by macroscopic magnetic barriers

Formation of bound states from the edge states of 2D topological insulator by macroscopic magnetic barriers

Effect of spin–orbit coupling on the hot-electron energy relaxation in nanowires

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