2003
DOI: 10.1016/s1386-9477(03)00227-3
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Energy loss rate of two-dimensional electron gas in GaInAs/AlInAs, InSb/AlInSb and GaSb/AlGaAsSb heterostructures

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Cited by 4 publications
(3 citation statements)
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“…In the temperature region we considered here indicates that acoustic deformation potential scattering mechanism is dominant mechanism compared to piezoelectric scattering mechanism. The same dominant mechanism was also observed in 2D GaAs, GaN, GaInAs quantum wells [17][18][19]. In the acoustic deformation potential scattering mechanism, the only adjustable parameter is the deformation potential constant E d .…”
Section: IIsupporting
confidence: 60%
See 1 more Smart Citation
“…In the temperature region we considered here indicates that acoustic deformation potential scattering mechanism is dominant mechanism compared to piezoelectric scattering mechanism. The same dominant mechanism was also observed in 2D GaAs, GaN, GaInAs quantum wells [17][18][19]. In the acoustic deformation potential scattering mechanism, the only adjustable parameter is the deformation potential constant E d .…”
Section: IIsupporting
confidence: 60%
“…In both the scattering mechanisms, we incorporated dynamical screening effect. The inclusion of dynamical screening effect reduces the energy loss rate an order of magnitude [17,18]. Figure 2 shows the variation of energy loss rate with quantum well width in the acoustic deformation potential scattering with a deformation potential constant E d = 12.0 eV, at T e =10.0K and carrier concentration N s =1.0x10 13 m -2 .…”
Section: IImentioning
confidence: 99%
“…Hot-electrons relax to lower temperature via acoustic phonon emission. There are numerous experimental and theoretical studies [39][40][41][42][43][44][45][46][47][48][49] on the hot-electron energy-loss rate of a 2DES without RSOI.…”
Section: Introductionmentioning
confidence: 99%