Energy loss by MeV carbon clusters and fullerene ions in solids

Baudin, Kilian; Brunelle, Alain; Chabot, M.; Della‐Negra, S.; Depauw, J.; Gardès, D.; Håkansson, P.; Beyec, Y. Le; Billebaud, A.; Fallavier, M.; Remillieux, J.; Poizat, Jean-Claude; Thomas, Jean-Paul

doi:10.1016/0168-583x(94)95376-7

Cited by 124 publications

(25 citation statements)

References 3 publications

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“…Therefore, ions are implanted deep in the substrate. For fullerene irradiations, samples were pre-thinned prior to irradiation in plane view (PV) configuration in order to analyze the region where the carbon atoms of the cluster remain significantly close enough that the cluster could likely be considered as a single projectile [60]. Obviously, the stopping region of the ions is avoided and the slowing down regime is predominately ruled by electronic processes.…”

Section: Methodsmentioning

confidence: 99%

“…For fullerenes clusters, S e is calculated using the method described in Ref. [60]. We add the S e of all the projectile individual constituents that is the S e of an individual carbon ion of the same velocity.…”

Section: Methodsmentioning

confidence: 99%

“…While all 930 MeV 208 Pb tracks appear amorphous, tracks for ions with lower S e (104 MeV 208 Pb, for example) may appear amorphous or crystalline because of their pronounced Table 1 Irradiation parameters for GaN, AlN, and InN. The projectile energy and S e are the values at the entrance of the target, v is the projectile velocity and ENSP the ratio between the electronic and nuclear stopping powers Projectile Energy (MeV) v 2 (MeV u -1 ) S e in GaN (keV nm -1 ) ENSP in GaN S e in AlN (keV nm -1 ) S e in InN (keV nm -1 ) C 60 U (S e = 24 keV nm -1 ) at a fluence of 5 9 10 11 cm -2 obtained using g = (-2110). Tracks appear only on 2.5 lm from the surface discontinuity.…”

Section: Ganmentioning

confidence: 99%

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Track formation in III-N semiconductors irradiated by swift heavy ions and fullerene and re-evaluation of the inelastic thermal spike model

et al. 2015

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International audienceAlN, GaN, and InN were irradiated at room temperature with monatomic swift heavy ions and high-energy fullerenes. Ion track formation was studied using transmission electron microscopy in both plane view and cross-sectional modes. A full experimental description of ion track formation in these compounds is presented. AlN shows a remarkable resistance towards track formation; InN is the most sensitive and shows partial decomposition, likely into N-2 and metallic clusters; the overlapping of the amorphous tracks in GaN does not give an amorphous layer because of a track-induced recrystallization. We discuss the application of the inelastic thermal spike model, which allows good and simple predictions of track radii in oxides, to the studied III-nitrides, and in general to semiconductors

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Ganmentioning

confidence: 99%

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Track formation in III-N semiconductors irradiated by swift heavy ions and fullerene and re-evaluation of the inelastic thermal spike model

et al. 2015

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“…The determination of the rate of energy deposition in electronic processes of cluster ions is still an open question, but the few available experimental results [42,43] show that for carbon clusters, the energy loss per carbon is that of an individual carbon of the same velocity within experimental uncertainties, so that the energy loss of C60 is estimated as the sum of the energy loss of 60 individual carbon atoms. The same additive rule is used to calculate the linear rate of energy deposition in elastic processes on the basis of the TRIM code [44] which does not take into account additional effects that occur in connection with the penetration of molecules.…”

Section: Irradiations With a Few 10 Mev Heavy Cluster Ionsmentioning

confidence: 99%

Materials Modifications with Cluster Beams: Bulk and Surface Modification

Dunlop

1999

Acta Phys. Pol. A

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It is now well accepted that electronic excitation and ionization arising from the slowing down of swift heavy ions can lead to structural modifications in some metallic targets as it has been known for a long time in insulators. A rapid overview of some results obtained after GeV monoatomic heavy ion irradiations will be given. It will then be shown that new specific effects take place during irradiations with cluster ions. The projectiles used are energetic cluster beams: 10 to 40 MeV Au4 or C60 ions. The rates of linear energy deposition in electronic excitation are close for GeV monoatomic and for 10 MeV cluster ions, but the cluster ions have characteristic velocities which are one order of magnitude smaller than those of monoatomic ions. This leads to a strong spatial localization of the deposited energy during the slowing down process. The density of deposited energy can then reach values as high as a few 100 eV/atom. This very high density of energy deposited in the electronic system of the targets can lead to spectacular structural modifications: generation in the vicinity of the ion trajectories of isolated or agglomerated point defects, new crystalline phases, amorphized regions... After an overview of such damage induced in bulk metals, semiconductors, and insulators, we will discuss surface damage, consisting in the formation of bumps, craters, "lava-flows" on the target surface.

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“…The energy losses of clusters in matter are not known with accuracy; however recent work shows that the energy loss of a C 60 molecule in the solid is approximately equal to the sum of the energy losses of each atom of the molecule. 9 Electronic stopping powers up to 60 keV/nm can then be estimated for irradiations with clusters at an energy of about 20 MeV.…”

Section: Introductionmentioning

confidence: 99%

Ion-beam mixing induced by atomic and cluster bombardment in the electronic stopping-power regime

et al. 1996

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Single crystals of magnesium oxide containing nanoprecipitates of sodium were bombarded with swift ions ͑ϳGeV-Pb, U͒ or cluster beams ͑ϳ20 MeV-C 60 ͒ to study the phase change induced by electronic processes at high stopping power ͑Ͼ10 keV/nm͒. The sodium precipitates and the defect creation were characterized by optical absorption and transmission electron microscopy. The ion or cluster bombardment leads to an evolution of the Na precipitate concentration but the size distribution remains unchanged. The decrease in Na metallic concentration is attributed to mixing effects at the interfaces between Na clusters and MgO. In addition, optical-absorption measurements show a broadening of the absorption band associated with electron plasma oscillations in Na clusters. This effect is due to a decrease of the electron mean free path, which could be induced by defect creation in the metal. All these results show an influence of high electronic stopping power in materials known to be very resistant to irradiation with weak ionizing projectiles. The dependence of these effects on electronic stopping power and on various solid-state parameters is discussed. ͓S0163-1829͑96͒07021-X͔

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Energy loss by MeV carbon clusters and fullerene ions in solids

Cited by 124 publications

References 3 publications

Track formation in III-N semiconductors irradiated by swift heavy ions and fullerene and re-evaluation of the inelastic thermal spike model

Track formation in III-N semiconductors irradiated by swift heavy ions and fullerene and re-evaluation of the inelastic thermal spike model

Materials Modifications with Cluster Beams: Bulk and Surface Modification

Ion-beam mixing induced by atomic and cluster bombardment in the electronic stopping-power regime

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