Energy level scheme of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mtext>InAs</mml:mtext><mml:mo>/</mml:mo><mml:msub><mml:mrow><mml:mtext>In</mml:mtext></mml:mrow><mml:mi>x</mml:mi></mml:msub><mml:msub><mml:mrow><mml:mtext>Ga</mml:mtext></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:mtext>As</mml:mtext><mml:mo>/</mml:mo><mml:mtext>GaAs</mml:mtext></mml:mrow></mml:math>quantum-dots-in-a-well infrared photodete

Höglund, Linda; Karlsson, K. F.; Holtz, Per-Olof; Pettersson, Håkan; Pistol, Mats‐Erik; Wang, Q.; Almqvist, Susanne; Asplund, Carl; Malm, Hedda; Petrini, E.; Andersson, Jan Y.

doi:10.1103/physrevb.82.035314

Cited by 19 publications

(5 citation statements)

References 25 publications

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“…11 It may be noted that the wavefunction of the QW state is influenced by the QD. 12 A simplified model is based on the QW potential embedded with the QD potential (considered as a QW 1 ). As can be seen from Fig.…”

mentioning

confidence: 99%

Study of valence-band intersublevel transitions in InAs/GaAs quantum dots-in-well infrared photodetectors

Lao

Wolde

Perera

et al. 2014

Applied Physics Letters

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The n-type quantum dot (QD) and dots-in-well (DWELL) infrared photodetectors, in general, display bias-dependent multiple-band response as a result of optical transitions between different quantum levels. Here, we present a unique characteristic of the p-type hole response, a wellpreserved spectral profile, due to the much reduced tunneling probability of holes compared to electrons. This feature remains in a DWELL detector, with the dominant transition contributing to the response occurring between the QD ground state and the quantum-well states. The biasindependent response will benefit applications where single-color detection is desired and also allows achieving optimum performance by optimizing the bias. V C 2014 AIP Publishing LLC.

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mentioning

confidence: 99%

Study of valence-band intersublevel transitions in InAs/GaAs quantum dots-in-well infrared photodetectors

Lao

Wolde

Perera

et al. 2014

Applied Physics Letters

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“…Therefore, we have also considered a case study of quantum-dots-in-a-well structure for comparison. In such a structure, the polarization-dependent data does not show any large splitting of the ground-state in the vertically polarized configuration [48]. It is, therefore, in the present study of vertical built-in electric field configuration in InGaAs/GaAs QWs, it is expected to show a less splitting in the ground state luminescence related to e 1 -hh 1 transition due to the polarization-induced effects.…”

Section: Resultsmentioning

confidence: 68%

Influence of interface states on built-in electric field and diamagnetic-Landau energy shifts in asymmetric modulation-doped InGaAs/GaAs QWs

Vashisht¹,

Porwal²,

Haldar³

et al. 2022

J. Phys. D: Appl. Phys.

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The impact of interface defect states on the recombination and transport properties of charges in asymmetric modulation-doped InGaAs/GaAs quantum wells is investigated. Three sets of high-mobility InGaAs quantum well structures are systematically designed and grown by the metal-organic vapor phase epitaxy technique to probe the effect of carrier localization on the electro-optical processes. In these structures, a built-in electric field drifts electrons and holes towards the opposite hetero-junctions of the quantum well, where their capture/recapture processes are assessed by temperature-dependent photoreflectance, photoluminescence, and photoconductivity measurements. The strength of the electric field in the structures is estimated from the Franz Keldysh oscillations observed in the photoreflectance spectra. The effects of the charge carrier localization at the interfaces lead to a reduction of the net electric field at a low temperature. Given this, the magnetic field is used to re-distribute the charge carriers and help in suppressing the effect of interface defect states, which results in a simultaneous increase in luminescence and photoconductivity signals. The in-plane confinement of charge carriers in quantum well by the applied magnetic field is therefore used to compensate the localization effects caused due to the built-in electric field. Subsequently, it is proposed that under the presence of large interface defect states, a magnetic field-driven Diamagnetic-Landau shift can be used to estimate the fundamental parameters of charge carriers from the magneto-photoconductivity spectra instead of magneto-photoluminescence spectra. The present investigation would be beneficial for the development of high mobility optoelectronic and spin photonic devices in the field of nano-technology.

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“…2 Moreover, they frequently appear as components of industrially important nanostructures 3 and quantum dots. 4 The latter brings us to lasers and infrared photodetectors characterized by the wavelength range of 1 25 ÷ 1 65 m (the case of In x Ga 1−x As) with low threshold current density and high output powers. 2 4 Furthermore, quantum dot discrete energy levels are programmable by means of internal strain, 5 which in turn is frequently accompanied by the defect formation.…”

Section: Introductionmentioning

confidence: 99%

Effect of Vacancy Concentration on Elastic and Electronic Properties of InAs and GaAs: Towards Defected Structures of Nanoobjects

Majtyka¹,

Chrobak

Romanowski³

et al. 2016

j nanosci nanotechnol

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This paper pertains to elastic properties of InAs and GaAs semiconducting crystals containing various amounts of vacancies--the relevant issue in the case of nanostructured electronic materials. The linear relationship between elastic constants and point defects concentration deduced from our classical molecular dynamic and ab initio calculations, confirms that an increasing vacancy content results in a decrease of pertinent elastic parameters, namely the crystal elastic stiffness-tensor components, the effect called herein "the softening of material" for simplicity. The pseudo-potential-based approach provides us results compatible with the available experimental data, while the alternatively used empirical potentials failed to account for different kind of vacancies on the elastic properties of semiconductors. Our results provide an expanded insight into the problems of modeling of the properties of the defected InAs and GaAs crystal structures. This issue is of interest to nanoelectronics and production of nanomaterials currently.

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Energy level scheme ofInAs/InxGa1−xAs/GaAsquantum-dots-in-a-well infrared photodete

Cited by 19 publications

References 25 publications

Study of valence-band intersublevel transitions in InAs/GaAs quantum dots-in-well infrared photodetectors

Study of valence-band intersublevel transitions in InAs/GaAs quantum dots-in-well infrared photodetectors

Influence of interface states on built-in electric field and diamagnetic-Landau energy shifts in asymmetric modulation-doped InGaAs/GaAs QWs

Effect of Vacancy Concentration on Elastic and Electronic Properties of InAs and GaAs: Towards Defected Structures of Nanoobjects

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