1974
DOI: 10.1088/0022-3719/7/3/009
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Energy-gap variations in semiconductor alloys

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Cited by 239 publications
(93 citation statements)
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“…From the XEOL spectra in Figure 7, there is a tunable red shift in both the band-gap and defect emissions with decreasing S or increasing Se content in the CdS x Se 1Àx nanostructures. It is known that the band-gap of CdS x Se 1Àx alloys can be determined by an interpolation between those of the two binaries (CdS and CdSe) with an additional nonlinear bowing parameter 60 according to the following equation: …”
Section: Experimental Xeol Results and Discussionmentioning
confidence: 99%
“…From the XEOL spectra in Figure 7, there is a tunable red shift in both the band-gap and defect emissions with decreasing S or increasing Se content in the CdS x Se 1Àx nanostructures. It is known that the band-gap of CdS x Se 1Àx alloys can be determined by an interpolation between those of the two binaries (CdS and CdSe) with an additional nonlinear bowing parameter 60 according to the following equation: …”
Section: Experimental Xeol Results and Discussionmentioning
confidence: 99%
“…(2), bowing parameterofb~0.9 eVwhich is still quite small >1.0eV as compared with those of other mixed crystals [32] which indicates that ZnSe and CdSe have a good miscibility [33]. Eq.…”
Section: Xps Results: General Scan and Depth Profilingmentioning
confidence: 87%
“…IGO 의 에너지 띠 간격은 In과 Ga의 화학양론비에 의해 3.7~4.9 eV 사이 의 범위에서 조정될 수 있다 [3,4]. In 2 O 3 는 실온에서 용융점까지의 온 도범위에서는 안정적인 체심 입방 bixbyite 구조(body-centered cubic bixbyite structure)로 결정체를 이룬다.…”
Section: 서 론unclassified