A Study on Indium Gallium Oxide Thin Film Transistors prepared by a Solution-based Deposition Method

Performance Improvement of In-Ga-Zn Oxide Thin-Film Transistors by Excimer Laser Annealing

“…This phenomenon is attributed to the laser annealing process and may be due to a large number of M-O bond breaks during the ELA process, resulting in the generation of many interstitial oxygen vacancy defects in the IZO film that could capture electrons, ultimately leading to a significant positive threshold voltage of the device. This is similar to the pure oxygen annealing reported in the literature, where the oxygen partial pressure is reduced during the annealing process (such as by introducing argon gas), the gap oxygen defects are reduced, and the device V th becomes negative accordingly [27][28][29][30].…”

“…the oxygen partial pressure is reduced during the annealing process (such as by introducing argon gas), the gap oxygen defects are reduced, and the device Vth becomes negative accordingly [27][28][29][30]. We analyzed whether the crystalline state of the thin film changed before and after ELA using X-ray diffraction (XRD).…”