Energy-enhanced atomic layer deposition for more process and precursor versatility

Potts, SE Stephen; Kessels, Wmm Erwin

doi:10.1016/j.ccr.2013.06.015

Cited by 89 publications

(83 citation statements)

References 179 publications

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“…The lower GPC of Al 2 O 3 at higher deposition temperatures [33][34][35]. The reported GPC for PEALD TiO 2 using TTIP in the range of 0.3-0.6 Å/cycle are relatively low, whereas thin films grown from TDMAT, Ti-Prime or Ti-Star have slightly higher growth rates than films grown from TTIP [36][37][38].…”

Section: Characterization Of Ald Thin Filmsmentioning

confidence: 95%

“…The reported GPC for PEALD TiO2 using TTIP in the range of 0.3-0.6 Å/cycle are relatively low, whereas thin films grown from TDMAT, Ti-Prime or Ti-Star have slightly higher growth rates than films grown from TTIP [36][37][38]. Very good lateral film thickness uniformity in the reactor is a prerequisite to ensure a uniform coating on a lens surface.…”

Section: Characterization Of Ald Thin Filmsmentioning

confidence: 99%

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Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition

et al. 2017

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Antireflection (AR) coatings are indispensable in numerous optical applications and are increasingly demanded on highly curved optical components. In this work, optical thin films of SiO 2 , Al 2 O 3 , TiO 2 and Ta 2 O 5 were prepared by atomic layer deposition (ALD), which is based on self-limiting surface reactions leading to a uniform film thickness on arbitrarily shaped surfaces. Al 2 O 3 /TiO 2 /SiO 2 and Al 2 O 3 /Ta 2 O 5 /SiO 2 AR coatings were successfully applied in the 400-750 nm and 400-700 nm spectral range, respectively. Less than 0.6% reflectance with an average of 0.3% has been measured on a fused silica hemispherical (half-ball) lens with 4 mm diameter along the entire lens surface at 0 • angle of incidence. The reflectance on a large B270 aspherical lens with height of 25 mm and diameter of 50 mm decreased to less than 1% with an average reflectance < 0.3%. The results demonstrate that ALD is a promising technology for deposition of uniform optical layers on strongly curved lenses without complex in situ thickness monitoring.

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Section: Characterization Of Ald Thin Filmsmentioning

confidence: 95%

Section: Characterization Of Ald Thin Filmsmentioning

confidence: 99%

Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition

et al. 2017

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“…However, for ALD, processes based on such co-reactants have been reported but have gained more attention fairly recently (see Ref. 47 …”

Section: What Can We Learn From Ald?mentioning

confidence: 99%

“…Redistribution subject to ECS terms of use (see 52.41.17. 47 Downloaded on 2018-05-07 to IP reaction mechanisms can take place although most studies so far relied on dissociation (e.g., dissociation of Cl 2 at active surface sites) in combination with desorption reactions, e.g., assisted by ions, electrons, or photons (See The early days of atomic layer etching section). However, many processes relying on other chemistries can also be potentially developed, e.g., as demonstrated in a recent article by Lee and George who developed a thermally driven "reverse ALD" process.…”

Section: And References Therein)mentioning

confidence: 99%

Atomic Layer Etching: What Can We Learn from Atomic Layer Deposition?

Faraz

Roozeboom

Knoops

et al. 2015

ECS J. Solid State Sci. Technol.

126

106

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Current trends in semiconductor device manufacturing impose extremely stringent requirements on nanoscale processing techniques, both in terms of accurately controlling material properties and in terms of precisely controlling nanometer dimensions. To take nanostructuring by dry etching to the next level, there is a fast growing interest in so-called atomic layer etching processes, which are considered the etching counterpart of atomic layer deposition processes. In this article, past research efforts are reviewed and the key defining characteristics of atomic layer etching are identified, such as cyclic step-wise processing, self-limiting surface chemistry, and repeated removal of atomic layers (not necessarily a full monolayer) of the material. Subsequently, further parallels are drawn with the more mature and mainstream technology of atomic layer deposition from which lessons and concepts are extracted that can be beneficial for advancing the field of atomic layer etching.

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“…Especially in the semiconductor industry, it might be vital not to grow thin films on the complete substrate but only on parts of it, and this can be achieved by area selective ALD. The slow growth rate of ALD can be overcome by coating a large numbers of substrates at the same time, or by using roll-to-roll or spatial ALD technology [51][52][53][54].…”

Section: Atomic Layer Depositionmentioning

confidence: 99%

Review on one-dimensional nanostructures prepared by electrospinning and atomic layer deposition

Szilágyi¹,

Nagy²

2014

J. Phys.: Conf. Ser.

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Abstract. This paper reviews the various 1D nanostructures, which were prepared by electrospinning and atomic layer deposition (ALD). On the one hand, electrospinning served to make sacrificial polymer templates for the ALD growth; and thus various single or multilayer inorganic nanotubes were obtained. On the other hand, polymer, polymer/inorganic or inorganic nanowire templates were produced by electrospinning. By a consecutive ALD reaction various core/shell nanowires were synthesized.

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Energy-enhanced atomic layer deposition for more process and precursor versatility

Cited by 89 publications

References 179 publications

Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition

Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition

Atomic Layer Etching: What Can We Learn from Atomic Layer Deposition?

Review on one-dimensional nanostructures prepared by electrospinning and atomic layer deposition

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