“…The body gain factor, namely the sensitivity of VT over the body voltage variation, is around 90 mV/V, which is much higher than in conventional bulk technology (25 mV/V). The lower VT of flipped-well devices is beneficial for low-voltage operation, whereas VT tuning capabilities can be profitably exploited to compensate for process, voltage, and temperature variations (PVTs) [28][29][30][31]. However, the lack of dedicated thick-copper metal layers in the BEOL, typically available in SiGe BiC-MOS technologies [6,32], makes crucial passive component design and layout arrangements (e.g., signal paths, power supply and ground interconnections, etc.…”