Energy Efficient and Process Tolerant Full Adder Design in Near Threshold Region Using FinFET

Islam, Aminul; Akram, M. W.; Imran, Ale; Hasan, Mohd.

doi:10.1109/ised.2010.19

Cited by 16 publications

(7 citation statements)

References 17 publications

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“…Alternatively, the threshold voltage of a circuit can shift due to process variations, leading to the same effect, operating a circuit either in the subthreshold region or above the threshold voltage. This behavior can lead to large shifts in gate driving capabilities of NTC transistors due to the exponential dependence of gate current on supply and threshold voltages [6]. Additionally, the low power characteristics of NTC degrade when the supply voltage is above the threshold voltage.…”

Section: Near Threshold Circuitsmentioning

confidence: 99%

MOS Current Mode Logic Near Threshold Circuits

Shapiro

Friedman

2014

JLPEA

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Near threshold circuits (NTC) are an attractive and promising technology that provides significant power savings with some delay penalty. The combination of NTC technology with MOS current mode logic (MCML) is examined in this work. By combining MCML with NTC, the constant power consumption of MCML is reduced to leakage power levels that can be tolerated in certain modern applications. Additionally, the speed of NTC is improved due to the high speed nature of MCML technology. A 14 nm Fin field effect transistor (FinFET) technology is used to evaluate these combined circuit techniques. A 32-bit Kogge Stone adder is chosen as a demonstration vehicle for feasibility analysis. MCML with NTC is shown to yield enhanced power efficiency when operated above 1 GHz with a 100% activity factor as compared to standard CMOS. MCML with NTC is more power efficient than standard CMOS beyond 9 GHz over a wide range of activity factors. MCML with NTC also exhibits significantly lower noise levels as compared to standard CMOS. The results of the analysis demonstrate that pairing NTC and MCML is efficient when operating at high frequencies and activity factors.

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Section: Near Threshold Circuitsmentioning

confidence: 99%

MOS Current Mode Logic Near Threshold Circuits

Shapiro

Friedman

2014

JLPEA

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“…Note that the impact of the aging on the FAs was not considered in these works. In [26] and [27], the impact of reducing the supply voltage down to the near-threshold region on the performance of the FAs has been investigated and some methods to improve the performance have been proposed. Also, the performance of a 1-bit conventional static FA realized using the FinFET technology at near-threshold region has been investigated in [27].…”

Section: Related Workmentioning

confidence: 99%

A comparative study on performance and reliability of 32-bit binary adders

et al. 2016

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In this paper, the performance and reliability of different binary adder families are studied for both the superthreshold and the near-threshold regions of operation. The adder structures are selected from both the carry propagate adders (CPAs) and parallel prefix adders (PPAs). The performance parameters which are used in the comparative study include delay, power, energy, and energy-delay-product (EDP) of the adders. Additionally, the impacts of the process variation and negative bias temperature instability (NBTI) on the delays of the adders under the aggressive supply voltage scaling are investigated. Also, the efficacies of the adders are compared using a merit function based on their performance and reliability parameters for a wide range of supply voltage levels, from the nominal voltage down to the near-threshold voltage. The study is performed for the 32-bit adder structures designed based on the 14-nm FinFET and 45-nm bulk CMOS technologies. The results which are obtained using HSPICE simulations, reveal that the reliability parameters similar to the performance parameters are a function of the adder architectures and those are the key components to determine the efficiencies of the adders. Also, the results show that the impacts of the process variation and NBTI on the delays of the high performance PPA structures are more than those of the CPA structures for the whole range of the supply voltage. The PPAs, however, have the higher merit factors compared to the CPAs under a wide range of supply voltage levels. The results presented in this paper may provide some guidelines for the designers to select proper adder structures based on their design requirements and constraints.

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“…Conductive metal contacts are made on either end of the SWNTs serve as the source and drain [16]- [18]. The CNFET is also compatible with existing CMOS technology [19]- [22]. A Carbon Nanotube Field Effect Transistor (CNFET) fabricated using semiconducting CNTs would have a top-view as shown in Fig.…”

Section: Overview Of Carbon Nanotube Fetmentioning

confidence: 99%

Voltage-mode universal filter for ZigBee using ±0.9V 32nm CNFET ICC-II

Tripathi

Ansari

2014

2014 5th International Conference - Confluence the Next Generation Information Technology Summit (Confluence)

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This paper presents the realization of a CNFETbased low-voltage low-power inverting current conveyor (ICC-II) at 32nm technology node. The circuit operates using ±0.9V supplies and voltage & current bandwidths of approximately 5 GHz are achieved. The variation of power consumption with the number of carbon nanotubes in the channel is also explored. A voltage-mode universal filter, suitable for operation in the 868 MHz -2.4 GHz band used by ZigBee, is then introduced. The performance of both the ICC-II and the voltage-mode filter is verified with the aid of HSPICE simulations.

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Energy Efficient and Process Tolerant Full Adder Design in Near Threshold Region Using FinFET

Cited by 16 publications

References 17 publications

MOS Current Mode Logic Near Threshold Circuits

MOS Current Mode Logic Near Threshold Circuits

A comparative study on performance and reliability of 32-bit binary adders

Voltage-mode universal filter for ZigBee using ±0.9V 32nm CNFET ICC-II

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Energy Efficient and Process Tolerant Full Adder Design in Near Threshold Region Using FinFET

Cited by 16 publications

References 17 publications

MOS Current Mode Logic Near Threshold Circuits

MOS Current Mode Logic Near Threshold Circuits

A comparative study on performance and reliability of 32-bit binary adders

Voltage-mode universal filter for ZigBee using &#x00B1;0.9V 32nm CNFET ICC-II

Contact Info

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About

Voltage-mode universal filter for ZigBee using ±0.9V 32nm CNFET ICC-II