Energy control of neutral oxygen particles passing through an aperture electrode

Ohno, Takeo; Nakayama, Daiki; Okada, Takeru; Samukawa, Seiji

doi:10.1016/j.rinp.2017.12.001

Cited by 11 publications

(11 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Details of the apparatus of the NBO system have been described in our previous reports. [27][28][29] Aluminum-doped ZnO (AZO) top electrodes were patterned using a shadow mask with a diameter of 150 µm; the AZO was deposited in Ar ambient to achieve highly oxygen deficient conducting films. All fabrication processes were conducted at room temperature.…”

Section: Methodsmentioning

confidence: 99%

Neutral oxygen irradiation enhanced forming-less ZnO-based transparent analog memristor devices for neuromorphic computing applications

et al. 2020

Self Cite

View full text Add to dashboard Cite

Surface oxidation employing neutral oxygen irradiation significantly improves the switching and synaptic performance of ZnO-based transparent memristor devices. The endurance of the as-irradiated device is increased by 100 times, and the operating current can be lowered by 10 times as compared with the as-deposited device. Moreover, the performance-enhanced device has an excellent analog behavior that can exhibit 3-bits per cell nonvolatile multistate characteristics and perform 15 stable epochs of synaptic operations with highly linear weight updates. A simulated artificial neural network comprising 1600 synapses confirms the superiority of the enhanced device in processing a 40 × 40 pixels grayscale image. The irradiation effectively decreases the concentration of oxygen vacancy donor defects and promotes oxygen interstitial acceptor defects on the surface of the ZnO films, which consequently modulate the redox process during rupture and rejuvenation of the filament. This

show abstract

Section: Methodsmentioning

confidence: 99%

Neutral oxygen irradiation enhanced forming-less ZnO-based transparent analog memristor devices for neuromorphic computing applications

et al. 2020

Self Cite

View full text Add to dashboard Cite

show abstract

“…A radiofrequency (RF) power supply can accurately control the etching rate of AlGaN in GaN-based HEMTs. 16,17 In this structure with 3-nm recess height, the recess etch rate in the NBE gate recess process is controlled to 5 nm/min, corresponding to RF bias power. 15 The electrical characteristics of both devices (with recessed and non-recessed gate) are extracted by solving a two-dimensional (2D) drift-diffusion model.…”

Section: Simulation Of Non-recessed and Recessed-gate Gan Hemts And Comparison With Experimental Datamentioning

confidence: 99%

Analytical Model for Two-Dimensional Electron Gas Charge Density in Recessed-Gate GaN High-Electron-Mobility Transistors

Sharbati

Gharibshahian

Ebel

et al. 2021

Journal of Elec Materi

View full text Add to dashboard Cite

A physics-based analytical model for GaN high-electron-mobility transistors (HEMTs) with non-recessed- and recessed-gate structure is presented. Based on this model, the two-dimensional electron gas density (2DEG) and thereby the on-state resistance and breakdown voltage can be controlled by varying the barrier layer thickness and Al mole fraction in non-recessed depletion-mode GaN HEMTs. The analytical model indicates that the 2DEG charge density in the channel increases from 2.4 × 1012 cm−2 to 1.8 × 1013 cm−2 when increasing the Al mole fraction from x = 0.1 to 0.4 for an experimental non-recessed-gate GaN HEMT. In the recessed-gate GaN HEMT, in addition to these parameters, the recess height can also control the 2DEG to achieve high-performance power electronic devices. The model also calculates the critical recess height for which a normally-ON GaN switch becomes normally-OFF. This model shows good agreement with reported experimental results and promises to become a useful tool for advanced design of GaN HEMTS.

show abstract

“…Device switching and synaptic performances could be improved after neutral oxygen irradiation [267]; this technique is also known as neutral beam oxidation (NBO). NBO can neutralize oxygen plasma [312] by charge exchange collision. NBO helps enhance surface oxidation, increasing the amount of oxygen interstitial at the TE of the ZnO interface.…”

Section: G Zno Based Rram For Synaptic Applicationmentioning

confidence: 99%

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

et al. 2021

View full text Add to dashboard Cite

Numerous works that have demonstrated the study and enhancement of switching properties of ZnO-based RRAM devices are discussed. Several native point defects that have a direct or indirect effect on ZnO are discussed. The use of doping elements, multi-layered structures, suitable bottom and top electrodes, controlling the deposition materials, and the impact of hybrid structure for enhancing the switching dynamics are discussed. The potentials of ZnO-based RRAM for invisible and bendable devices are also covered. ZnO-based RRAM has the potential for possible application in bio-inspired cognitive computational systems. Thus, the synapse capability of ZnO is presented. The sneak-path current issue also besets ZnO-based RRAM crossbar array architecture. Hence, various attempts to subdue the bottleneck have been shown and discussed in this article. Interestingly, ZnO provides not only helpful memory features. However, it demonstrates the ability to be used in nonvolatile multifunctional memory devices. Also, this review covers various issues like the effect of electrodes, interfacial layers, proper switching layers, appropriate fabrication techniques, and proper annealing settings. These may offer a valuable understanding of the study and development of ZnO-based RRAM and should be an avenue for overcoming RRAM challenges.

show abstract

Energy control of neutral oxygen particles passing through an aperture electrode

Cited by 11 publications

References 10 publications

Neutral oxygen irradiation enhanced forming-less ZnO-based transparent analog memristor devices for neuromorphic computing applications

Neutral oxygen irradiation enhanced forming-less ZnO-based transparent analog memristor devices for neuromorphic computing applications

Analytical Model for Two-Dimensional Electron Gas Charge Density in Recessed-Gate GaN High-Electron-Mobility Transistors

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

Contact Info

Product

Resources

About