Energy Control of Incident Ions to the Chamber-Wall by Using Push–Pull Bias (Phase-Controlled Bias) in UHF-ECR Etching System

Sumiya, Masahiro; Yasui, Naoki; Watanabe, Seiichi

doi:10.1143/jjap.43.1149

Cited by 6 publications

(3 citation statements)

References 3 publications

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“…In the previous study, it was reported that chamber wall sputtering and plasma diffusion can be suppressed by maintaining RF phase differences of 180 . [5][6][7] Typical upper and lower RF bias powers at 800 kHz in this experiment were 600 and 1500 W, respectively.…”

Section: Methodsmentioning

confidence: 99%

Real Time Estimation and Control of Oxide-Etch Rate Distribution Using Plasma Emission Distribution Measurements

Yokogawa

Maeda

Izawa

2008

jjap

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We have investigated the transient electroluminescence (EL) onset of the double-layer light-emitting devices made from poly(N-vinylcarbozole) (PVK) doped with 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) and tris(8-hydroxy-quinoline) aluminium (Alq 3 ). For the double-layered device in which PVK was doped with 0.1 wt% DCJTB, the EL onset of PVK lags that of DCJTB and Alq 3 , while the EL onset of DCJTB and Alq 3 is simultaneous. However, the EL emission of the double-layered device of PVK/Alq 3 originates only from Alq 3 . The results show that DCJTB dopants can not only help to tunnel electrons from Alq 3 zone to PVK but can also assist electrons transfer in PVK under high electric field by hopping between DCJTB molecules or from DCJTB to PVK sites at a low doping concentration of 0.1 wt%. When the DCJTB doping concentration is 4.0 wt%, the EL onset of Alq 3 lags that of DCJTB. The difference in the EL onsets of DCJTB, Alq 3 and PVK is attributed to the slow build-up of the internal space charge in the vicinity of the interface between PVK and Alq 3 . The electron potential difference of the interface between Alq 3 and PVK doped by DCJTB can be adjusted by changing the DCJTB doping concentration in double-layer devices.

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Section: Methodsmentioning

confidence: 99%

Real Time Estimation and Control of Oxide-Etch Rate Distribution Using Plasma Emission Distribution Measurements

Yokogawa

Maeda

Izawa

2008

jjap

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“…A 200-MHz power supply and a 4-MHz antenna-bias power are introduced to the upper antenna, and a 4-MHz RF-bias power is supplied to the bottom electrode. The phase of each bias is controlled to confine the plasma electrically [2]. The interaction between the plasma and reactor wall is suppressed by this phasecontrolled bias system, so long-term stability of the etching performance is expected.…”

Section: Issues In 400-hr Runmentioning

confidence: 99%

Impact of low-potential plasma on long-term stability in low-k via etching

Maeda

Tamura

Andou

et al. 2007

2007 International Symposium on Semiconductor Manufacturing

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We have developed an ESC (electrostatic chuck) damage-less plasma-cleaning technique for a UHF-ECR dielectric etching apparatus. The degradation of the surface of the ESC in wafer-less plasma-cleaning was suppressed by lowering the ion energy incident on the ESC surface. We have confirmed long-term stability of the etching performance and a long MTBC (Mean Time Between wet Cleaning) of over 400 hrs in low-k via etching. We have also estimated that the ESC lifetime was over 12,000 hr.

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“…18 In that work, the phase-controlled 800 kHz bias was applied both to the antenna and wafer electrodes, while ion-energy distributions on the grounded wall were measured with an ion-energy analyzer. 18 In that work, the phase-controlled 800 kHz bias was applied both to the antenna and wafer electrodes, while ion-energy distributions on the grounded wall were measured with an ion-energy analyzer.…”

Section: Introductionmentioning

confidence: 99%

Effect on plasma and etch-rate uniformity of controlled phase shift between rf voltages applied to powered electrodes in a triode capacitively coupled plasma reactor

Sung¹,

Jeong²,

Park³

et al. 2008

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The influence of the phase shift between rf voltages applied to the powered electrodes on plasma parameters and etch characteristics was studied in a very high-frequency ͑VHF͒ capacitively coupled plasma ͑CCP͒ triode reactor. rf voltages at 100 MHz were simultaneously applied to the top and bottom electrodes having a controlled phase shift between them, which could be varied between 0°and 360°. Several plasma and process characteristics were measured as a function of the phase shift: ͑i͒ radial profiles of plasma-emission intensity, ͑ii͒ line-of-sight averaged plasma-emission intensity, and ͑iii͒ radial profiles of blanket SiO 2 etching rate over a 300 mm wafer. Radial profiles of plasma emission were obtained using the scanning optical probe. It has been shown that all the measured characteristics strongly depend on the phase shift: ͑i͒ plasma-emission intensity is minimal at phase shift equal to 0°and maximal at 180°for all radial positions, while the emission radial profile changes from bell-shaped distribution with considerable nonuniformity at 0°to a much more flattened distribution at 180°; ͑ii͒ line-of-sight averaged plasma-emission intensity shows a similar dependence on the phase shift with minimum and maximum at 0°and 180°, respectively; and ͑iii͒ the etch-rate radial profile at 180°shows a much better uniformity as compared to that at 0°. Some of these results can be qualitatively explained by the redistribution of plasma currents that flow between the electrodes and also from the electrodes to the grounded wall with the phase shift. We suggest that the phase-shift effect can be used to improve the plasma and etch-rate spatial uniformity in VHF-CCP triode reactors.

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Energy Control of Incident Ions to the Chamber-Wall by Using Push–Pull Bias (Phase-Controlled Bias) in UHF-ECR Etching System

Cited by 6 publications

References 3 publications

Real Time Estimation and Control of Oxide-Etch Rate Distribution Using Plasma Emission Distribution Measurements

Real Time Estimation and Control of Oxide-Etch Rate Distribution Using Plasma Emission Distribution Measurements

Impact of low-potential plasma on long-term stability in low-k via etching

Effect on plasma and etch-rate uniformity of controlled phase shift between rf voltages applied to powered electrodes in a triode capacitively coupled plasma reactor

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