Energy-band structure and optical gain in strained InAs(N)/GaSb/InAs(N) quantum well lasers.

Abstract

We present a theoretical study of band structure and optical gain spectra of dilute-N InAsN/GaSb/InAsN and the similar N-free InAs/GaSb/InAs laser structures, which have a “W” band alignment. Calculations are based on a 10×10 k⋅p model incorporating valence, conduction, and nitrogen-induced bands. The two laser diodes are designed to operate at 3.3 μm at room temperature. We find that the incorporation of a few percent of nitrogen in the laser active region improves optical gain performance, which leads to a peak gain value of approximately 1000 cm−1 for a typical injection carrier concentration of 1×1012 cm−2 and a carrier transparent density of 0.54×1018 cm−3.

Modelling of an InAs/GaSb/InSb short-period superlattice laser diode for mid-infrared emission by the k.p method

“…The 8-band Hamiltonian for a strained bulk semiconductor, which takes into account the energy levels from conduction, heavy-hole, light-hole and spin-orbit split-off bands, in the bases |S ↑ ,|S ↓ , 3 2 , 1 2 , − 1 2 , − 3 2 , 7 2 , − 7 2 has been described in our recent works [19,20].…”

“…Here, m 0 is the free-electron mass; γ1 , γ2 and γ3 are the modified Luttinger parameters, is the magnitude of spinorbit splitting at k ρ = 0 and E p = (2m 0 P 2 )/h 2 is the Kane energy related to the Kane matrix element P [19].…”

Waveform Analysis of Bilayer Iridium/Gold Superconducting Transition Edge Sensor Microcalorimeter

“…For the dilute-N InAsN alloys, we employ a coupling potential of C CN = 1.68 eV and an N-level position of E N = 1.48 eV relative to the top of the valence band maximum in InAs [9]. Further details in modeling are described elsewhere [17] and material parameters used in the calculation are reported in [18].…”

A multi-color quantum well photodetector for mid- and long-wavelength infrared detection

“…. Constant values and the meaning of the parameters used are taken from [32] and summarized in table 1.…”