Modelling of an InAs/GaSb/InSb short-period superlattice laser diode for mid-infrared emission by the k.p method

Abstract

The electronic band structure and optical gain of an InAs/GaSb/InSb short-period superlattice laser diode on a GaSb substrate are numerically investigated with an accurate 8 × 8 k.p model. Using a realistic graded and asymmetric interface profile, we obtain a reasonable agreement on band gap energy with our experimental data extracted from laser emissions performed on the laser diode. The optical performance in terms of optical gain is then calculated for the laser structure and we demonstrate the utility of interface design to model short-period superlattice structures.

Effect of microscopic interface asymmetry on optical properties of short-period InAs/GaSb type-II superlattices

“…interface effect and by employing a delta-function-like interface potential to describe this effect, they obtained an excellent agreement with the experimental data; Hong and co-workers [13] as well as Rejeb and co-workers [14] attributed this discrepancy to the atomic segregation effect and by using a graded and asymmetric interface profile to describe this effect, they also obtained a good agreement with the experimental data.…”

InAs/InAsSb strain balanced superlattices for optical detectors: Material properties and energy band simulations

“…[3][4][5] Part of this progress is due to the extensive modeling efforts, which have improved over time to include even Sb segregation on the interfaces. [6][7][8][9][10][11][12] Most of this progress has been based on the use of molecular beam epitaxy (MBE) growth, as it is very challenging to grow the monolayer interfaces needed for short period GaSb/InAs superlattices via organometallic vapor phase epitaxy (OMVPE). 13 OMVPE growth technology is desirable, as it has the advantage of higher volume production than MBE, and thus the cost advantage compared to that of MCT technology would be improved significantly.…”

Electroluminescence characterization of mid-infrared InAsSb/AlInAs multi-quantum well light emitting diodes heteroepitaxially integrated on GaAs and silicon wafers

“…MIR LEDs are also considered as a far more attractive and cost-effective alternative to lasers especially for widespread distributed sensing applications which require many point sensors, portable instruments and low power consumption. To date, a wide range of homoepitaxial Sbbased III-V semiconductor devices have been developed [6][7][8][9] based on several quantum systems such as GaInAsSb/AlGaAsSb quantum wells (QWs) [9], InSb/InAs quantum dots (QDs) [10] and type-II InAs/GaSb superlattices (SLs) [11] demonstrating promising performance. More recently, significant progress has been made in the development of interband cascade LEDs (ICLEDs) exhibiting strong output power up to 1.4 mW and 0.5 mW at 4.2 and 4.7 µm respectively [12,13].…”