Energy band alignment of atomic layer deposited HfO2 on epitaxial (110)Ge grown by molecular beam epitaxy

Abstract

. K.; Zhu, Y.; Maurya, D.; et al., "Energy band alignment of atomic layer deposited HfO2 on epitaxial (110)Ge grown by molecular beam epitaxy," Appl. Phys. Lett. 102, 093109 (2013); http://dx

Quasi-zero lattice mismatch and band alignment of BaTiO3 on epitaxial (110)Ge

“…This suggests that a robust interface prevents the oxidation of the (110)Ge surface similar to the case of HfO 2 on (110)Ge. 1 It has been reported that band offsets in addition to substrate orientation and surface structure can also depend on various other parameters such as overlayer crystallinity, deposition temperature, deposition rate, microscopic interface dipole and interdiffusion or reactivity. 40 However, in the case of amorphous BTO/(110)Ge, the surface reconstruction has the dominant effect as compared to the other variables.…”

“…1,10,13,15,16,[42][43][44] However, the measures must be taken in order to compensate the positive changes generated during XPS measurement. [42][43][44][45] Unless, these positive charges were neutralized during the XPS measurement by flowing electron through the sample, there could be positive charge accumulation over the surface and potentially affect the band bending due to insufficient compensation of electron loss.…”

“…Compared with Si, Ge has low field bulk mobility gains up to 2Â for electrons and 4Â for holes. Moreover, Ge is more compatible than Si with the most promising recent high-j gate dielectrics 1 which eliminates the unwanted low-j interfacial dielectric layer normally formed on Si. Furthermore, low bandgap Ge is compliant with the requirement of lower supply voltage operation of transistor.…”

“…Significant research has been conducted on the high-j gate dielectrics such as HfO 2 , ZrO 2 , and Al 2 O 3 grown on (100)Ge, [10][11][12][13][14][15][16][17][18] (110)Ge, 1,15,16 and (111)Ge. 15,16 Among the new high-j dielectric materials, BaTiO 3 (BTO) directly grown on semiconductors has attracted attention for nonvolatile single transistor memory, 19 to reduce the susbthreshold swing and increase the on-current of a transistor.…”

Studies on RF magnetron sputtered HfO2 thin films for microelectronic applications

“…[6,7] Moreover, HfO 2 is also used as a sensitive layer in Ion Selective Field Effect Transistors. [8] Several deposition techniques such as electron beam evaporation, [9] molecular beam epitaxy, [10] atomic layer deposition, [11] sol-gel process, [12] pulsed laser deposition, [13] and sputtering, [14] have been employed to form HfO 2 layers. Among these methods, the reactive magnetron sputtering provides more advantage in controlling the structure and composition of the deposited films.…”